ETC IRFBC30ASTRL

PD- 91890B
IRFBC30AS/L
SMPS MOSFET
HEXFET® Power MOSFET
Applications
Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
l
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
VDSS
Rds(on) max
ID
600V
2.2Ω
3.6A
l
D 2 Pak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
3.6
2.3
14
74
0.69
± 30
7.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Typical SMPS Topology:
l
Single transistor Flyback
Notes 
through … are on page 10
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IRFBC30AS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Drain-to-Source Breakdown Voltage
600
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
2.0
–––
IDSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
IGSS
Gate-to-Source Reverse Leakage
–––
V(BR)DSS
Typ.
–––
0.67
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA†
2.2
Ω
VGS = 10V, ID = 2.2A „
4.5
V
VDS = VGS, ID = 250µA
25
VDS = 600V, VGS = 0V
µA
250
VDS = 480V, VGS = 0V, TJ = 125°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
2.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
9.8
13
19
12
510
70
3.5
730
19
31
Max. Units
Conditions
–––
S
VDS = 50V, ID = 2.2A
23
I D = 3.6A
5.4
nC VDS = 480V
11
VGS = 10V, See Fig. 6 and 13 „
–––
VDD = 300V
–––
ID = 3.6A
ns
–––
RG = 12Ω
–––
RD = 82Ω,See Fig. 10 „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 480V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
290
3.6
7.4
mJ
A
mJ
Typ.
Max.
Units
–––
–––
1.7
40
°C/W
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
2
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Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 3.6
showing the
A
G
integral reverse
––– –––
14
S
p-n junction diode.
––– ––– 1.6
V
TJ = 25°C, IS = 3.6A, VGS = 0V „
––– 400 600
ns
TJ = 25°C, IF = 3.6A
––– 1.1 1.7
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFBC30AS/L
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
0.1
4.5V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
1
4.5V
100
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.01
4.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
9.0
ID = 3.6A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFBC30AS/L
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
1000
Ciss
100
Coss
10
Crss
20
VGS , Gate-to-Source Voltage (V)
10000
10
100
VDS = 480V
VDS = 300V
VDS = 120V
16
12
8
4
1
1
ID = 3.6A
FOR TEST CIRCUIT
SEE FIGURE 13
0
1000
0
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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1.2
10us
10
100us
1
0.1
1ms
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFBC30AS/L
4.0
RD
VDS
I D , Drain Current (A)
VGS
D.U.T.
RG
3.0
+
-VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFBC30AS/L
400
D R IV E R
L
VDS
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP
BOTTOM
ID
1.6A
2.3A
3.6A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGD
740
VG
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
V
- DS
V DSav , Avalanche Voltage ( V )
QGS
720
700
680
660
640
0.0
VGS
1.0
2.0
3.0
4.0
IAV , Avalanche Current ( A)
3mA
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6
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Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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IRFBC30AS/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
D=
Period
P.W.
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRFBC30AS/L
D2Pak Package Outline
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
1 5.49 (.6 10)
1 4.73 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
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A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRFBC30AS/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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9
IRFBC30AS/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )
1 .6 5 ( .0 6 5 )
0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )
1 5 .42 (.60 9 )
1 5 .22 (.60 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TRL
1 .75 (.06 9 )
1 .25 (.04 9 )
1 0.9 0 (.4 2 9)
1 0.7 0 (.4 2 1)
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
16 .1 0 (.63 4 )
15 .9 0 (.62 6 )
F E E D D IR E C T IO N
13.50 (.532 )
12.80 (.504 )
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
3 30 .00
( 14.1 73 )
MAX.
Notes:
6 0.0 0 (2.36 2)
M IN .
N O TE S :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 46mH
RG = 25Ω, IAS = 3.6A. (See Figure 12)
ƒ ISD ≤ 3.6A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
26 .40 (1 .03 9)
24 .40 (.9 61 )
3
30.4 0 (1.19 7)
M A X.
4
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Uses IRFBC30A data and test condi-
tions
TJ ≤ 150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645
8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
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