LM9061 Power MOSFET Driver with Lossless Protection General Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch. A CMOS logic compatible ON/OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15V zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110 µA current sink discharges the gate capacitances of the MOSFET for a gradual turn-OFF characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET. Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. Should the VDS voltage, due to excessive load current, exceed the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10 µA output current sink) after programmable delay time interval. Designed for the automotive application environment the LM9061 has a wide operating temperature range of −40˚C to +125˚C, remains operational with VCC up to 26V, and can Typical Application withstand 60V power supply transients. The LM9061 is available in an 8-pin small outline package, and an 8-pin dual in-line package. Features n Built-in charge pump for gate overdrive of high side drive applications n Lossless protection of the power MOSFET n Programmable MOSFET protection voltage n Programmable delay of protection latch-OFF n Fast turn-ON (1.5 ms max with gate capacitance of 25000 pF) n Undervoltage shut OFF with VCC < 7V n Overvoltage shut OFF with VCC > 26V n Withstands 60V supply transients n CMOS logic compatible ON/OFF control input n Surface mount and dual-in-line packages available Applications n n n n n Valve, relay and solenoid drivers Lamp drivers DC motor PWM drivers Logic controlled power supply distribution switch Electronic circuit breaker Connection Diagrams 01231703 Top View Order Number LM9061M See NS Package Number M08A 01231701 01231702 Top View Order Number LM9061N See NS Package Number N08E © 2001 National Semiconductor Corporation DS012317 www.national.com LM9061 Power MOSFET Driver with Lossless Protection April 1995 LM9061 Absolute Maximum Ratings (Note 1) Lead Temperature (Soldering, 10 seconds) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage 260˚C Operating Ratings (Note 2) 60V Reverse Supply Current Supply Voltage 20 mA Output Voltage VCC +15V Voltage at Sense and Threshold (through 1 kΩ) 150˚C Storage Temperature −55˚C to +150˚C DC Electrical Characteristics −40˚C to +125˚C Thermal Resistance (θJ-A) −0.3V to VCC +0.3V Junction Temperature −0.3V to VCC Ambient Temperature Range −25V to +60V ON/OFF Input Voltage 7V to 26V ON/OFF Input Voltage LM9061M 150˚C/W LM9061N 100˚C/W 7V ≤ VCC ≤20V, RREF = 15.4 kΩ, −40˚C ≤ TJ ≤ +125˚C, unless otherwise specified. Symbol Parameter Conditions Min Max Units POWER SUPPLY IQ Quiescent Supply Current ON/OFF = “0” 5 mA ICC Operating Supply Current ON/OFF = “1”, CLOAD = 0.025 µF, Includes Turn-ON Transient Output Current 40 mA VOUT = OFF 1.5 V ON/OFF CONTROL INPUT VIN(0) ON/OFF Input Logic “0” VIN(1) ON/OFF Input Logic “1” VOUT = ON 3.5 VHYST ON/OFF Input Hysteresis Peak to Peak 0.8 2 V IIN ON/OFF Input Pull-Down Current VON/OFF = 5V 50 250 µA VCC + 7 VCC + 15 V 0.9 V V GATE DRIVE OUTPUT VOH Charge Pump Output Voltage ON/OFF = “1” VOL OFF Output Voltage ON/OFF = “0”, ISINK = 110 µA VCLAMP Sense to Output Clamp Voltage ON/OFF = “1, VSENSE = VTHRESHOLD 11 15 V ISINK(Normal-OFF) Output Sink Current Normal Operation ON/OFF = “0”, VDELAY = 0V, VSENSE = VTHRESHOLD 75 145 µA Output Sink Current with Protection Comparator Tripped VDELAY = 7V, VSENSE < VTHRESHOLD 5 15 µA VSENSE = VTHRESHOLD 75 88 µA 1.15 ISINK(Latch-OFF) PROTECTION CIRCUITRY IREF Threshold Pin Reference Current VREF Reference Voltage 1.35 V ITHR(LEAKAGE) Threshold Pin Leakage Current VCC = Open, 7V ≤ VTHRESHOLD ≤ 20V 10 µA ISENSE Sense Pin Input Bias Current VSENSE = VTHRESHOLD 10 µA 6.74 15.44 µA 5 6.2 V 2 10 mA 0.4 V DELAY TIMER IDELAY Delay Pin Source Current VTIMER Delay Timer Threshold Voltage IDIS Delay Capacitor Discharge Current VDELAY = 5V VSAT Discharge Transistor Saturation Voltage IDIS = 1 mA www.national.com 2 LM9061 AC Timing Characteristics 7V ≤ VCC ≤20V, RREF = 15.4 kΩ, −40˚C ≤ TJ ≤ +125˚C, CLOAD = 0.025 µF, CDELAY = 0.022 µF, unless otherwise specified. Symbol TON TOFF(NORMAL) TOFF(Latch-OFF) TDELAY Parameter Output Turn-ON Time Conditions Min Max Units CLOAD = 0.025 µF 7V ≤ VCC ≤ 10V, VOUT ≥ VCC + 7V 1.5 ms 10V ≤ VCC ≤ 20V, VOUT ≥ VCC + 11V 1.5 ms Output Turn-OFF Time, Normal Operation (Note 4) CLOAD = 0.025 µF VCC = 14V, VOUT ≥ 25V VSENSE = VTHRESHOLD 4 10 ms Output Turn-OFF Time, Protection Comparator Tripped (Note 4) CLOAD = 0.025 µF VCC = 14V, VOUT ≥ 25V VSENSE = VTHRESHOLD 45 140 ms Delay Timer Interval CDELAY = 0.022 µF 8 18 ms Note 1: Absolute Maximum Ratings indicate the limits beyond which damage to the device may occur. Note 2: Operating Ratings indicate conditions for which the device is intended to be functional, but may not meet the guaranteed specific performance limits. For guaranteed specifications and test conditions see the Electrical Characteristics. Note 3: ESD Human Body Model: 100 pF discharged through 1500Ω resistor. Note 4: The AC Timing specifications for TOFF are not production tested, and therefore are not specifically guaranteed. Limits are provided for reference purposes only. Smaller load capacitances will have proportionally faster turn-ON and turn-OFF times. Block Diagram 01231704 3 www.national.com LM9061 Typical Operating Waveforms 01231705 Typical Electrical Characteristics Standby Supply Current vs VCC Operating Supply Current vs VCC 01231717 www.national.com 01231718 4 (Continued) Output Voltage vs VCC Output Sink Current vs Temperature 01231720 01231719 Output Sink Current vs Temperature Output Source Current vs Output Voltage 01231721 01231722 Reference Voltage vs Temperature Delay Threshold vs Temperature 01231723 01231724 5 www.national.com LM9061 Typical Electrical Characteristics LM9061 Typical Electrical Characteristics (Continued) Delay Charge Current vs Temperature 01231725 Timing Definitions 01231707 Application Hints BASIC OPERATION The LM9061 contains a charge pump circuit that generates a voltage in excess of the applied supply voltage to provide gate drive voltage to power MOSFET transistors. Any size of N-channel power MOSFET, including multiple parallel connected MOSFETs for very high current applications, can be used to apply power to a ground referenced load circuit in what is referred to as “high side drive” applications. Figure 1 shows the basic application of the LM9061. www.national.com 6 device, the turn OFF characteristic is even more gradual as the output sinking current is only 10 µA (see Protection Circuitry Section). (Continued) TURN ON AND TURN OFF CHARACTERISTICS The actual rate of change of the voltage applied to the gate of the power device is directly dependent on the input capacitances of the MOSFET used. These times are important to know if the power to the load is to be applied repetitively as is the case with pulse width modulation drive. Of concern are the capacitances from gate to drain, CGD, and from gate to source, CGS. Figure 2 details the turn ON and turn OFF intervals in a typical application. An inductive load is assumed to illustrate the output transient voltage to be expected. At time t1, the ON/OFF input goes high. The output, which drives the gate of the MOSFET, immediately pulls the gate voltage towards the VCC supply of the LM9061. The source current from pin 4 is typically 30 mA which quickly charges CGD and CGS. As soon as the gate reaches the VGS(ON) threshold of the MOSFET, the switch turns ON and the source voltage starts rising towards VCC. VGS remains equal to the threshold voltage until the source reaches VCC. While VGS is constant only CGD is charging. When the source voltage reaches VCC, at time t2, the charge pump takes over the drive of the gate to ensure that the MOSFET remains ON. The charge pump is basically a small internal capacitor that acquires and transfers charge to the output pin. The clock rate is set internally at typically 300 kHz. In effect the charge pump acts as a switched capacitor resistor (approximately 67k) connected to a voltage that is clamped at 13V above the Sense input pin of the LM9061 which is equal to the VCC supply in typical applications. The gate voltage rises above VCC in an exponential fashion with a time constant dependent upon the sum of CGD and CGS. At this time however the load is fully energized. At time t3, the charge pump reaches its maximum potential and the switch remains ON. At time t4, the ON/OFF input goes low to turn OFF the MOSFET and remove power from the load. At this time the charge pump is disconnected and an internal 110 µA current sink begins to discharge the gate input capacitances to ground. The discharge rate (∆V/∆T) is equal to 110 µA/ (CGD + CGS). The load is still fully energized until time t5 when the gate voltage has reached a potential of the source voltage (VCC) plus the VGS(ON) threshold voltage of the MOSFET. Between time t5 and t6, the VGS voltage remains constant and the source voltage follows the gate voltage. With the voltage on CGD held constant the discharge rate now becomes 110 µA/CGD. At time t6 the source voltage reaches 0V. As the gate moves below the VGS(ON) threshold the MOSFET tries to turn OFF. With an inductive load, if the current in the load has not collapsed to zero by time t6, the action of the MOSFET turning OFF will create a negative voltage transient (flyback) across the load. The negative transient will be clamped to −VGS(ON) because the MOSFET must turn itself back ON to continue conducting the load current until the energy in the inductance has been dissipated (at time t7). 01231708 FIGURE 1. Basic Application Circuit When commanded ON by a logic “1” input to pin 7 the gate drive output, pin 4, rises quickly to the VCC supply potential at pin 5. Once the gate voltage exceeds the gate-source threshold voltage of the MOSFET, VGS(ON), (the source is connected to ground through the load) the MOSFET turns ON and connects the supply voltage to the load. With the source at near the supply potential, the charge pump continues to provide a gate voltage greater than the supply to keep the MOSFET turned ON. To protect the gate of the MOSFET, the output voltage of the LM9061 is clamped to limit the maximum VGS to 15V. It is important to remember that during the Turn-ON of the MOSFET the output current to the Gate is drawn from the VCC supply pin. The VCC pin should be bypassed with a capacitor with a value of at least ten times the Gate capacitance, and no less than 0.1 µF. The output current into the Gate will typically be 30 mA with VCC at 14V and the Gate at 0V. As the Gate voltage rises to VCC, the output current will decrease. When the Gate voltage reaches VCC, the output current will typically be 1 mA with VCC at 14V. A logic “0” on pin 7 turns the MOSFET OFF. When commanded OFF a 110 µA current sink is connected to the output pin. This current discharges the gate capacitances of the MOSFET linearly. When the gate voltage equals the source voltage (which is near the supply voltage) plus the VGS(ON) threshold of the MOSFET, the source voltage starts following the gate voltage and ramps toward ground. Eventually the source voltage equals 0V and the gate continues to ramp to zero thus turning OFF the power device. This gradual Turn-OFF characteristic, instead of an abrupt removal of the gate drive, can, in some applications, minimize the power dissipation in the MOSFET or reduce the duration of negative transients, as is the case when driving inductive loads. In the event of an overstress condition on the power MOSFET PROTECTION CIRCUITRY A unique feature of the LM9061 is the ability to sense excessive power dissipation in the MOSFET and latch it OFF to prevent permanent failure. Instead of sensing the actual current flowing through the MOSFET to the load, which typically requires a small valued power resistor in series with 7 www.national.com LM9061 Application Hints LM9061 Application Hints To utilize this lossless protection technique requires knowledge of key characteristics of the power MOSFET used. In any application the emphasis for protection can be placed on either the power MOSFET or on the amount of current delivered to the load, with the assumption that the selected MOSFET can safely handle the maximum load current. (Continued) the load, the LM9061 monitors the voltage drop from drain to source, VDS, across the MOSFET. This “lossless” technique allows all of the energy available from the supply to be conducted to the load as required. The only power loss is that of the MOSFET itself and proper selection of a particular power device for an application will minimize this concern. Another benefit of this technique is that all applications use only standard inexpensive 1⁄4W or less resistors. 01231709 FIGURE 2. Turn ON and Turn OFF Waveforms To protect the MOSFET from exceeding its maximum junction temperature rating, the power dissipation needs to be limited. The maximum power dissipation allowed (derated for temperature) and the maximum drain to source ON resistance, RDS(ON), with both at the maximum operating ambient temperature, needs to be determined. When switched ON the power dissipation in the MOSFET will be: The maximum junction temperature of the MOSFET and/or the maximum current to the load can be limited by monitoring and setting a maximum operational value for the drain to source voltage drop, VDS. In addition, in the event that the load is inadvertently shorted to ground, the power device will automatically be turned-OFF. In all cases, should the MOSFET be switched OFF by the built in protection comparator, the output sink current is switched to only 10 µA to gradually turn OFF the power device. The VDS voltage to limit the maximum power dissipation is therefore: VDS (MAX) = √PD (MAX) x RDS(ON) (MAX) Figure 3 illustrates how the threshold voltage for the internal protection comparator is established. Two resistors connect the drain and source of the MOSFET to the LM9061. The Sense input, pin 1, monitors the source voltage while the Threshold input, pin 2, is connected to the drain, which is also connected to the constant load power supply. Both of these inputs are the two inputs to the protection comparator. Should the voltage at the sense input ever drop below the voltage at the threshold input, the protection comparator output goes high and initiates an automatic latch-OFF function to protect the power device. Therefore With this restriction the actual load current and power dissipation obtained will be a direct function of the actual RDS(ON) of the MOSFET at any particular ambient temperature but the junction temperature of the power device will never exceed its rated maximum. To limit the maximum load current requires an estimate of the minimum RDS(ON) of the MOSFET (the minimum RDS(ON) of discrete MOSFETs is rarely specified) over the required operating temperature range. The maximum current to the load will be: www.national.com 8 It is important to note that the programmed reference current serves a multiple purpose as it is used internally for biasing and also has a direct effect on the internal charge pump switching frequency. The design of the LM9061 is optimized for a reference current of approximately 80 µA, set with a 15.4 kΩ ± 1% resistor for RREF. To obtain the guaranteed performance characteristics it is recommended that a 15.4 kΩ resistor be used for RREF. The protection comparator is configured such that during normal operation, when the output of the comparator is low, the differential input stage of the comparator is switched in a manner that there is virtually no current flowing into the non-inverting input of the comparator. Therefore, only IREF flows through resistor RTHRESHOLD. All of the input bias current, 20 µA maximum, for the comparator input stage (twice the ISENSE specification of 10 µA maximum, defined for equal potentials on each of the comparator inputs) however flows into the inverting input through resistor RSENSE. At the comparator threshold, the current through RSENSE will be no more than the ISENSE specification of 10 µA. (Continued) the switching threshold voltage of the comparator directly controls the maximum VDS allowed across the MOSFET while conducting load current. The threshold voltage is set by the voltage drop across resistor RTHRESHOLD. A reference current is fixed by a resistor to ground at IREF, pin 6. To precisely regulate the reference current over temperature, a stable band gap reference voltage is provided to bias a constant current sink. The reference current is set by: The reference current sink output is internally connected to the threshold pin. IREF then flows from the load supply through RTHRESHOLD. The fixed voltage drop across RTHRESHOLD is approximately equal to the maximum value of VDS across the MOSFET before the protection comparator trips. 01231711 FIGURE 3. Protection Comparator Biasing To tailor the VDS (MAX) threshold for any particular application, the resistor RTHRESHOLD can be selected per the following formula: the resistor used for RTHRESHOLD. Never set RSENSE to a value larger than RTHRESHOLD. When the protection comparator output goes high , the total bias current for the input stage transfers from the Sense pin to the Threshold pin, thereby changing the voltages present at the inputs to the comparator. For consistent switching of the comparator right at the desired threshold point, the voltage drop that occurs at the non-inverting input (Threshold) should equal, or exceed, the rise in voltage at the inverting input (Sense). In automotive applications the load supply may be the battery of the vehicle whereas the VCC supply for the LM9061 is a switched ignition supply. When the VCC supply is switched OFF there is always a concern for the amount of current drained from the battery. The only current drain under this condition is a leakage current into the Threshold pin which is less than 10 µA. where RREF = 15.4 kΩ, ISENSE is the input bias current to the protection comparator, RSENSE is the resistor connected to pin 1 and VOS is the offset voltage of the protection comparator (typically in the range of ± 10 mV). The resistor RSENSE is optional, but is strongly recommended to provide transient protection for the Sense pin, especially when driving inductive type loads. A minimum value of 1 kΩ will protect the pin from transients ranging from −25V to +60V. This resistor should be equal to, or less than, 9 www.national.com LM9061 Application Hints LM9061 Application Hints capacitor discharged. Should a surge of load current trip the protection comparator high, the discharge transistor turns OFF and an internal 10 µA current source begins linearly charging the delay capacitor. If the surge current, with excessive VDS voltage, lasts long enough for the capacitor to charge to the timing comparator threshold of typically 5.5V, the output of the comparator will go high to set a flip-flop and immediately latch the MOSFET OFF. It will not re-start until the ON/OFF Input is toggled low then high. The delay time interval is set by the selection of CDELAY and can be found from: (Continued) A bypass capacitor across RREF is optional and is used to help keep the reference voltage constant in applications where the VCC supply is subject to high levels of transient noise. This bypass capacitor should be no longer than 0.1 µF, and is not needed for most applications. DELAY TIMER To allow the MOSFET to conduct currents beyond the protection threshold for a brief period of time, a delay timer function is provided. This timer delays the actual latching OFF of the MOSFET for a programmable interval. This feature is important to drive loads which require a surge of current in excess of the normal ON current upon start up, or at any point in time, such as lamps and motors. Figure 4 details the delay timer circuitry. A capacitor connected from the Delay pin 8, to ground sets the delay time interval. With the MOSFET turned ON and all conditions normal, the output of the protection comparator is low and this keeps the discharge transistor ON. This transistor keeps the delay where typically VTIMER = 5.5V and IDELAY = 10 µA. Charging of the delay capacitor is clamped at approximately 7.5V which is the internal bias voltage for the 10 µA current source. 01231712 FIGURE 4. Delay Timer MINIMUM DELAY TIME A minimum delay time interval is required in all applications due to the nature of the protection circuitry. At the instant the MOSFET is commanded ON, the voltage across the MOSFET, VDS, is equal to the full load supply voltage because the source is held at ground by the load. This condition will immediately trip the protection comparator. Without a minimum delay time set, the timing comparator will trip and force the MOSFET to latch OFF thereby never allowing the load to be energized. To prevent this situation a delay capacitor is required at pin 8. The selection of a minimum capacitor value to ensure proper start-up depends primarily on the load characteristics and how much time is required for the MOSFET to raise the load voltage to the point where the Sense input is more positive than the Threshold input (TSTART-UP). Some experimentation is required if a specific minimum delay time characteristic is desired. Therefore: www.national.com In the absence of a specific delay time requirement, a value for CDELAY of 0.1 µF is recommended. OVER VOLTAGE PROTECTION The LM9061 will remain operational with up to +26V on VCC. If VCC increases to more than typically +30V the LM9061 will turn off the MOSFET to protect the load from excessive voltage. When VCC has returned to the normal operating range the device will return to normal operation without requiring toggling the ON/OFF input. This feature will allow MOSFET operation to continue in applications that are subject to periodic voltage transients, such as automotive applications. For circuits where the load is sensitive to high voltages, the circuit shown in Figure 5 can be used. The addition of zener on the Sense input (pin 1) will provide a maximum voltage 10 the main supply off, then back on. An optional reset switch on the ON/OFF pin will allow a “push-button reset” of the circuit after latching OFF. Scaling of the external resistor value, from VCC to the ON/ OFF input pin, with the internal 30k resistor can be used to increase the startup voltage. The circuit operation then becomes dependent on the resistor ratio and VCC providing an ON/OFF pin voltage being above the ON threshold rather than the LM9061 low VCC shutdown feature. (Continued) reference for the Protection Comparator. The Sense resistor is required in this application to limit the zener current. When the device is ON, and the load supply attempts to rise higher than (VZENER + VTHRESHOLD), the Protection comparator will trip, and the Delay Timer will start. If the high supply voltage condition lasts long enough for the Delay Timer to time out, the MOSFET will be latched off. The ON/OFF input will need to be toggled to restart the MOSFET. 01231714 01231713 FIGURE 5. Adding Over-Voltage Protection FIGURE 6. Electronic Circuit Breaker REVERSE BATTERY The LM9061 is not protected against reverse polarity supply connections. If the VCC supply should be taken negative with respect to ground, the current from the VCC pin should be limited to 20 mA. The addition of a diode in series with the VCC input is recommended. This diode drop does not subtract significantly from the charge pump gate overdrive output voltage. DRIVING MOSFET ARRAYS The LM9061 is an ideal driver for any application that requires multiple parallel MOSFETs to provide the necessary load current. Only a few “common sense” precautions need to be observed. All MOSFETs in the array must have identical electrical and thermal characteristics. This can be solved by using the same part number from the same manufacturer for all of the MOSFETs in the array. Also, all MOSFETs should have the same style heat sink or, ideally, all mounted on the same heat sink. The electrical connection of the MOSFETs should get special attention. With typical RDS(ON) values in the range of tens of milli-Ohms, a poor electrical connection for one of the MOSFETs can render it useless in the circuit. LOW BATTERY As an additional protection feature the LM9061 incorporates an Undervoltage Shut-OFF function. If the VCC supply to the package drops below 7V, where it may not be assured that the MOSFET is actually ON when it should be, circuitry will automatically turn OFF the power MOSFET. Figure 7 shows a circuit with four parallel NDP706A MOSFETs. This particular MOSFET has a typical RDS(ON) of 0.013Ω with a TJ of 25˚C, and 0.020Ω with a TJ of +125˚C. With the VDS threshold voltage being set to 500 mV, this circuit will provide a typical maximum load current of 150A at 25˚C, and a typical maximum load current of 100A at 125˚C. The maximum dissipation, per MOSFET, will be nearly 20W at 25˚C, and 12.5W at 125˚C. With up to 20W being dissipated by each of the four devices, an effective heat sink will be required to keep the TJ as low as possible when operating near the maximum load currents. Figure 6 shows the LM9061 used as an electronic circuit breaker. This circuit provides low voltage shutdown, overvoltage latch OFF, and overcurrent latch OFF. In the event of a latch OFF shutdown, the circuit can be reset by shutting 11 www.national.com LM9061 Application Hints LM9061 Application Hints (Continued) 01231715 FIGURE 7. Driving Multiple MOSFETs www.national.com 12 LM9061 Application Hints (Continued) 01231716 FIGURE 8. Increasing MOSFET Turn On Time INCREASING MOSFET TURN ON TIME The ability of the LM9061 to quickly turn on the MOSFET is an important factor in the management of the MOSFET power dissipation. Caution should be exercised when attempting to increase the MOSFET Turn On time by limiting the Gate drive current. The MOSFET average dissipation, and the LM9061 Delay time, must be recalculated with the extended switching transition time. Figure 8 shows a method of increasing the MOSFET Turn On time, without affecting the Turn Off time. In this method the Gate is charged at an exponential rate set by the added external Gate resistor and the MOSFET Gate capacitances. Although the LM9061 will drive MOSFETs from any manufacturer, National Semiconductor offers a wide range of power MOSFETs. Figure 9 shows a small sample of the devices available. Part ID VDSS RDS(ON) Package NDP706A 75A 60V 0.015Ω TO-220 NDP706B 70A 60V 0.018Ω TO-220 NDP708A 60A 80V 0.022Ω TO-220 NDB708A 60A 80V 0.022Ω TO-263 NDP606A 48A 60V 0.025Ω TO-220 NDP606B 42A 60V 0.028Ω TO-220 NDP608A 36A 80V 0.042Ω TO-220 NDB608A 36A 80V 0.042Ω TO-263 NDP508A 19A 80V 0.080Ω TO-220 NDB508A 19A 80V 0.080Ω TO-263 NDP408A 11A 80V 0.160Ω TO-220 NDS9410 7A 30V 0.03Ω SO-8 NDS9936* 5A 30V 0.05Ω SO-8 NDS9945* 3.5A 60V 0.10Ω SO-8 * Dual FIGURE 9. Recommended DMOS Power MOSFETs 13 www.national.com LM9061 Physical Dimensions inches (millimeters) unless otherwise noted Order Number LM9061M NS Package Number M08A Order Number LM9061N NS Package Number N08E www.national.com 14 LM9061 Power MOSFET Driver with Lossless Protection Notes LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation Americas Email: [email protected] www.national.com National Semiconductor Europe Fax: +49 (0) 180-530 85 86 Email: [email protected] Deutsch Tel: +49 (0) 69 9508 6208 English Tel: +44 (0) 870 24 0 2171 Français Tel: +33 (0) 1 41 91 8790 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: [email protected] National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.