1N5711WS SWITCHING DIODE SOD-323 FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Speed Low Capacitance Surface Mount Package Ideally Suited for Automatic Insertion MARKING: SA MAXIMUM RATINGS (Ta=25℃unless otherwise noted ) Symbol Parameter Value Unit 70 V RMS Reverse Voltage 49 V IFM Forward Continuous Current 15 mA PD Power Dissipation 200 mW Thermal Resistance from Junction to Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VR VR(RMS) RΘJA DC Blocking Voltage ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Reverse voltage V(BR) IR=10μA Reverse current IR VR=50V 0.2 IF=1mA 0.41 Forward voltage VF IF=15mA 1 VR=0V,f=1MHz 2 pF IF= IR=5mA, Irr=0.1×IR, RL=100Ω 1 ns Total capacitance Reverse recovery time Ctot trr 70 Unit V V １ JinYu semiconductor μA www.htsemi.com Ｄａｔｅ：２０１１／０５