ETC SLD

Preliminary
SLD-1026Z
Product Description
Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance
LDMOS transistor designed for operation from 10 to 2700MHz. It is an
excellent solution for applications requiring high linearity and efficiency
at a low cost. The SLD-1026Z is typically used in the design of driver
stages for power amplifiers, repeaters, and RFID applications.The
power transistor is fabricated using Sirenza’s latest, high performance
LDMOS II process. This product features a RoHS/WEEE Compliant
package with matte tin finish, designated by the ‘Z’ suffix.
Pb
RoHS Compliant
& Green Package
3 Watt Discrete LDMOS Device
Plastic Surface Mount Package
Proprietary SOF-26 Package
Functional Schematic Diagram
Product Features
•
•
•
•
•
•
•
ESD
Protection
3 Watt Output P1dB
Single Polarity Supply Voltage
High Gain: 19 dB at 915 MHz
High Efficiency: 44% at 3W CW
XeMOS II LDMOS
Proprietary Low Thermal Resistance Package
Integrated ESD Protection, Class 1B
Applications
•
•
•
•
•
Backside Paddle = Ground
Base Station PA driver
Repeaters
RFID
Military Communication
GSM / EDGE / TDSCDMA / CDMA / WCDMA
RF Specifications
Symbol
Frequency
Parameter
Unit
Min
Typ
Max
Frequency of Operation
MHz
10
-
2700
Gain
3 Watt CW, 902-928 MHz
dB
19
Gain
3 Watt CW, 2110-2170 MHz
dB
14
Efficiency
Drain Efficiency at 3 Watt CW , 915MHz
%
44
Efficiency
Drain Efficiency at 3 Watt CW , 2140MHz
%
43
Input Return Loss, 3 Watt Output Power, 915MHz
dB
-12
IRL
IRL
Linearity
2 carrier WCDMA
performance
RTH
Test Conditions
Input Return Loss, 3 Watt Output Power, 2140 MHz
dB
-12
3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz
dBc
-28
3rd Order IMD at 3 Watt PEP (Two Tone), 2140MHz
dBc
-28
1dB Compression (P1dB), 915 MHz
Watt
3.5
1dB Compression (P1dB), 2140 MHz
Watt
3.0
ACP at 0.3 Watt output, 2140MHz, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
dBc
-48
IM3 at 0.3 Watt, 2140MHz output, 10 MHz carrier separation,
3GPP2, Test model 1, 64 DPCH, 67% Clipping,
PAR= 9.3 @ 0.01% CCDF
dBc
-47
Thermal Resistance (Junction-to-Case)
ºC/W
17
VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
DC Specifications
Symbol
Parameter
Unit
Forward Transconductance @ 30mA IDS
gm
Min
Typical
mA / V
VGS Threshold
IDS=3mA, VDS=28V
Volts
VGS Quiescent
IDS=50mA, VDS=28V
Volts
VDS Breakdown
1mA VDS current
Volts
65
4.2
5.2
3
4
Ciss
Input Capacitance (Gate to Source) VGS=0V VDS=28V
pF
Crss
Reverse Capacitance (Gate to Drain) VGS=0V VDS=28V
pF
0.2
Coss
Output Capacitance (Drain to Source) VGS=0V VDS=28V
pF
3.2
Drain to Source Resistance, VGS=10V VDS=250mV
Ω
3.0
RDSon
Max
150
5
Quality Specifications
Parameter
Description
ESD Rating
Human Body Model
Rating
1B
Pin Description
Pin #
Function
1, 3
NC
2
Gate
4, 6
NC
5
Drain
GND
Source, Gnd
Description
These pins are not connected internal to the package. Bus them to pin 2 as shown in the app circuit.
Transistor RF input and gate bias voltage. The gate bias voltage must be temperature compensated to maintain constant
bias current over the operating temperature range. Care must be taken to protect against video transients that exceed
the maximum input power or voltage.
These pins are not connected internal to the package. Bus them to pin 5 as shown in the app circuit.
Transistor RF output and drain bias voltage. Typical voltage 28V.
These pins are DC connected to the backside paddle. They provide good thermal connection to the backside paddle for
hand soldering and rework. Many thermal and electrical GND vias are recommended as shown in the landing pattern.
Pin Diagram
Absolute Maximum Ratings
Parameters
Value
Unit
35
Volts
Gate Voltage (VGS)
20
Volts
RF Input Power
+30
dBm
Load Impedance for Continuous Operation Without Damage
10:1
VSWR
Output Device Channel Temperature
+150
ºC
Operating Temperature Range
-40 to +85
ºC
Storage Temperature Range
-40 to +150
ºC
GND
1
ESD
Protection
Drain Voltage (VDS )
6
5
2
4
3
GND
Operation of this device beyond any one of these limits may cause permanent damage. For
reliable continuous operation see typical setup values specified in the table on page one.
Note 1:
Gate voltage must be applied to VGS lead concurrently or after application of drain voltage to prevent potentially destructive oscillations. Bias voltages
should never be applied to the transistor unless it is properly terminated on both input and output.
Note 2:
The required VGS corresponding to a specific IDQ will vary from device to device due to the normal die-to-die variation in threshold voltage with LDMOS
transistors.
Note 3:
The threshold voltage (VGSTH) of LDMOS transistors varies with device temperature. External temperature compensation may be required. See Sirenza
application notes AN-067 LDMOS Bias Temperature Compensation.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 400 MHz Application Circuit
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz
0
30
-30
20
-40
10
Gain
IM3
IM7
400
420
440
460
-30
35
-35
30
-40
25
-45
20
-50
15
480
500
40
-10
30
-15
20
-20
Gain
Efficiency
IRL
0
460
480
500
Gain (dB)
-5
Input Return Loss (dB)
Gain (dB), Efficiency (%)
50
440
1.5
2
2.5
3
3.5
4
22
60
21.5
50
21
40
20.5
30
20
20
-25
19.5
-30
520
19
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
1
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=30mA, Freq=450 MHz
0
420
-70
0.5
Pout (W PEP)
60
400
-60
-65
0
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W
380
Efficiency
IM5
0
Frequency (MHz)
10
-55
Gain
IM3
IM7
5
-60
520
0
380
40
10
-50
Efficiency
IM5
IRL
-25
Gain
Efficiency
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Pout (W)
Phone: (800) SMI-MMIC
3
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EDS-104157 Rev H
IMD (dBc)
-20
Gain (dB), Efficiency (%)
Gain (dB), Efficiency (%)
40
IMD(dBc), IRL (dB)
-10
50
45
Efficiency (%)
60
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=30mA, Freq=450 MHz, Delta F=1 MHz
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 800 MHz Application Circuit
Gain (dB), Efficiency (%)
30
-30
20
-40
10
-50
0
-60
940
45
-25
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
Gain
IM3
IM7
10
Efficiency
IM5
-60
5
820
840
860
880
900
920
-65
0
-70
0
Frequency (MHz)
0.5
1
1.5
2
2.5
3
3.5
4
Pout (W PEP)
50
-5
40
-10
30
-15
20
-20
Gain
Efficiency
IRL
10
0
820
840
860
880
900
920
Gain (dB)
0
Input Return Loss (dB)
Gain (dB), Efficiency (%)
60
20
60
19.5
50
19
40
18.5
30
18
20
-25
17.5
-30
940
17
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
Gain
Efficiency
Efficiency (%)
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=30mA, Freq=880 MHz
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Pout (W)
Phone: (800) SMI-MMIC
4
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EDS-104157 Rev H
IMD (dBc)
-20
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=30mA, Freq=880 MHz, Delta F=1 MHz
Gain (dB), Efficiency (%)
40
60
IMD(dBc), IRL (dB)
50
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz
0
Gain
Efficiency
IM3
IM5
IM7
IRL
-10
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 800 MHz Application Circuit
N-CDMA spectrum. Pout= 0.3 W, Vdd=28V, Idq=40mA.
PAR = 9.8 dB @ 0.01% Probability on CCDF
CDMA Gain, Efficiency, ACPR, ALT1 vs Pout
Vdd=28V, Idq=30mA, Freq=880 MHz
-35
20
40
Gain
Efficiency
-40
10
35
ACPR
ALT1
-45
0
-50
25
-55
20
-60
15
-65
10
-70
5
0
0.01
-10
-20
-30
-40
-50
1
ACPR in 30
KHz BW
ALT1 in 30
KHz BW
-70
0.876
-80
0.1
ACPR in 30
KHz BW
-60
-75
N-CDMA IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 - 13)
1.2288 MHz Channel BW
dB
30
ACPR (dB), ALT1 (dB)
Gain (dB), Efficiency (%)
45
0.878
ALT1 in 30
KHz BW
0.880
0.882
Frequency (GHz)
Pout (W PEP)
CCDF N-CDMA IS-95 (Pilot, Sync, Paging, Traffic
Codes 8 - 13). Single-Carrier Test Signal
100
Probability (%)
10
1
0.1
N-CDMA. 1.2288 MHz Channel Bandwidth.
ACPR Measured in 30 KHz Bandwidth @
±750 KHz Offset. ALT1 Measured in 30 KHz
Bandwidth @ ±1980 KHz Offset. PAR = 9.8
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
Peak-to-Average (dB)
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104157 Rev H
0.884
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 900 MHz Application Circuit
0
-10
40
-20
30
-30
20
-40
10
-50
50
-20
45
-25
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
10
Gain
IM3
IM7
5
0
850
870
890
910
930
950
-70
0
0.5
1
45
-2
40
-4
-6
Gain
Efficiency
-8
IRL
25
-10
20
-12
15
-14
10
-16
5
-18
870
890
910
930
2.5
3
3.5
4
4.5
950
-20
970
60
23
50
22
40
21
30
Gain
Efficiency
20
20
19
10
18
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
2
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=50mA, Freq=920 MHz
24
Gain (dB)
0
Input Return Loss (dB)
Gain (dB), Efficiency (%)
50
0
850
1.5
Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=50mA, Pout=3W
30
-65
0
-60
970
Frequency (MHz)
35
-60
Efficiency
IM5
Efficiency (%)
Gain (dB), Efficiency (%)
50
Efficiency
IM5
IRL
Gain (dB), Efficiency (%)
Gain
IM3
IM7
IMD(dBc), IRL (dB)
60
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=50mA, Freq=920 MHz, Delta F=1 MHz
IMD (dBc)
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=50mA, Pout=3W PEP, Delta F=1 MHz
0
0
1
2
3
4
5
Pout (W)
Phone: (800) SMI-MMIC
6
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EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 900 MHz Application Circuit - Data over Temperature
Efficiency vs Pout over Temperature
Vdd=28V, Idq=50mA, Freq=940 MHz
CW Gain vs Pout over Temperature
Vdd=28V, Idq=50mA, Freq=940 MHz
70
22
21
60
20
50
Efficiency (%)
Gain (dB)
19
18
17
t-=85
16
15
14
40
t-=85
t=55
30
t=25
t=55
t=25
20
t=0
10
t=0
t=-25
t=-25
13
0
0
1
2
3
4
5
6
0
1
2
3
Pout (W)
4
5
6
Pout (W)
IMD3 vs Pout over Temperature
Vdd=28V, Idq=50mA, Freq=940 MHz
2 tone Efficiency vs Pout over Temperature
Vdd=28V, Idq=50mA, Freq=940 MHz
-20
45
40
-25
35
30
Efficiency (%)
IMD3 (dBc)
-30
-35
t-=85
t=55
t=25
-40
t=0
25
20
t-=85
15
t=55
t=25
10
t=0
t=-25
-45
t=-25
5
-50
0
0
0.5
1
1.5
2
2.5
Pout (W avg)
303 S. Technology Court
Broomfield, CO 80021
0
0.5
1
1.5
2
2.5
Pout (W avg)
Phone: (800) SMI-MMIC
7
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EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1840 MHz Application Circuit
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
Gain
IM3
IM7
10
Efficiency
IM5
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz
0
60
Gain
Efficiency
IM3
IM5
IM7
IRL
-10
50
40
-20
30
-30
20
-40
10
-50
-60
5
-65
0
0
1780 1800
-70
0.5
1
1.5
2
2.5
3
Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W
16.5
45
16
40
15.5
35
15
30
14.5
25
14
20
13.5
15
Gain
10
Efficiency
12.5
5
12
0
0.5
1
1.5
2
Gain (dB), Efficiency (%)
50
Efficiency (%)
17
0
2.5
3
3.5
60
0
50
-5
40
30
Gain
Efficiency
IRL
-10
-15
20
-20
10
-25
-30
0
1760 1780 1800 1820 1840 1860 1880 1900 1920
Frequency (MHz)
Pout (W)
303 S. Technology Court
Broomfield, CO 80021
-60
1900 1920
Frequency (MHz)
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=30mA, Freq=1840 MHz
13
1820 1840 1860 1880
Input Return Loss (dB)
0
Gain (dB)
IMD(dBc), IRL (dB)
-25
Gain (dB), Efficiency (%)
45
IMD (dBc)
Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=30mA, Freq=1840 MHz, Delta F=1 MHz
Phone: (800) SMI-MMIC
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EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1840 MHz Application Circuit
GSM/EDGE Gain, Efficiency, EVM vs Frequency
Vdd=28V, Idq=30mA, Freq=1840 MHz
45
9
35
Gain
Efficiency
8
7
EVM
30
6
25
5
20
4
15
3
10
2
5
1
0
0.01
0
0.1
1
10
-50
SR @ 400 KHz
-55
Spectral regrowth (dBc)
10
EVM- Error Vector Magnitude (%)
50
40
Gain (dB), Efficiency (%)
GSM/EDGE Spectral regrowth at 400 KHz and 600 KHz vs Pout
Vdd=28V, Idq=30mA, Freq=18400 MHz
SR @ 600 KHz
-60
-65
-70
-75
0.01
0.1
Frequency (MHz)
1
10
Pout (W PEP)
GSM / Edge Test Signal
Spectrum
10
Reference Pow er
0
-10
dB
-20
-30
400 KHz
-40
-50
400 KHz
600 KHz
600 KHz
-60
-70
1.839
1.839
1.839
1.84KHz
1.84 1.84 1.841Span
1.841
1.841
Center
1.84
GHz 1.84 1.84 200
2 MHz
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
9
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EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1960 MHz Application Circuit
-20
30
-30
-40
20
-25
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
Gain
IM3
IM7
10
-50
10
45
Efficiency
IM5
-60
5
-60
0
1880 1900 1920 1940 1960 1980 2000 2020 2040
-65
0
-70
0
0.5
1
Frequency (MHz)
2
2.5
3
50
-5
40
-10
30
-15
Gain
Efficiency
IRL
-20
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=30mA, Freq=1960 MHz
17
50
16.5
45
16
40
15.5
35
15
30
14.5
25
14
20
13.5
Efficiency (%)
0
Gain (dB)
60
Input Return Loss (dB)
Gain (dB), Efficiency (%)
1.5
Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W
20
IMD (dBc)
40
Gain (dB), Efficiency (%)
Gain (dB), Efficiency (%)
50
IMD(dBc), IRL (dB)
60
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=30mA, Freq=1960 MHz, Delta F=1 MHz
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz
0
Gain
Efficiency
IM3
IM5
IM7
IRL
-10
15
Gain
10
-25
13
10
Efficiency
12.5
0
-30
1880 1900 1920 1940 1960 1980 2000 2020 2040
12
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Pout (W)
Phone: (800) SMI-MMIC
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EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 1960 MHz Application Circuit
CW Gain vs Pout over Idq
Vdd=28V, Freq=1960 MHz
CDMA - Gain, Efficiency, ACPR vs Pout
Vdd=28V, Idq=40mA, Freq=1960 MHz
25
-40
20
Gain (dB), Efficiency (%)
17
16
Gain (dB)
Gain
Efficiency
ACPR
15
Idq=50 mA
-45
15
-50
10
-55
ACPR (dBc)
18
Idq=40 mA
14
5
Idq=30 mA
-60
Idq=20 mA
N-CDMA IS-95 (Pilot, Sync,
Paging, Traffic Codes 8 - 13)
13
0
0.5
1
1.5
2
2.5
3
3.5
0
0.01
Pout (W)
-65
0.1
1
Pout (W AVG)
CCDF N-CDMA IS-95 (Pilot, Sync, Paging, Traffic
Codes 8 - 13). Single-Carrier Test Signal
N-CDMA spectrum. Pout= 0.3 W, Vdd=28V, Idq=40mA.
PAR = 9.8 dB @ 0.01% Probability on CCDF
100
20
1.2288 MHz Channel BW
10
10
-10
1
dB
Probability (%)
0
0.1
-20
-30
N-CDMA. 1.2288 MHz Channel Bandwidth.
ACPR Measured in 30 KHz Bandwidth @
±885 KHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF
0.01
-40
-50
ACP
ACP
-60
0.001
0
1
2
3
4
5
6
7
8
9
10
-70
1.956
Peak-to-Average (dB)
303 S. Technology Court
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1.958
1.96
1.962
1.964
Frequency (GHz)
Phone: (800) SMI-MMIC
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EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 2017 MHz Application Circuit
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=50mA, Pout=3W
50
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=50mA, Freq=2017 MHz
0
18
50
-10
17
40
16
30
15
20
30
-20
Gain
Efficiency
25
IRL
20
-30
15
Gain
Efficiency
-40
14
-50
2040
13
10
Efficiency (%)
35
Gain (dB)
Gain (dB), Efficiency (%)
40
Input Return Loss (dB)
45
10
5
2000
2010
2020
2030
0
0
1
2
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=50mA, Pout=3W PEP, Delta F=1 MHz
60
40
-20
30
-30
20
-40
10
50
-20
45
-25
40
-30
35
-35
30
-40
25
-45
20
-50
15
-55
-10
-50
Gain (dB), Efficiency (%)
Efficiency
IM5
IRL
IMD(dBc), IRL (dB)
Gain (dB), Efficiency (%)
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=50mA, Freq=2017 MHz, Delta F=1 MHz
0
50
10
Gain
IM3
IM7
5
0
1990
2000
2010
2020
2030
-60
2040
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
4
Pout (W)
Frequency (MHz)
Gain
IM3
IM7
3
IMD (dBc)
0
1990
-60
Efficiency
IM5
-65
0
-70
0
0.5
1
1.5
2
2.5
3
3.5
4
Pout (W PEP)
Phone: (800) SMI-MMIC
12
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 2017 MHz Application Circuit
CDMA Gain, Efficiency, ACPR, ALT1 vs Pout
Vdd=28V, Idq=50mA, Freq=2017 MHz
CCDF N-CDMA IS-95 (Pilot, Sync, Paging, Traffic
Codes 8 - 13). Single-Carrier Test Signal
100
-40
Gain
Efficiency
-45
35
ACPR
ALT1
-50
30
-55
25
-60
20
-65
15
-70
10
-75
5
0
0.01
10
Probability (%)
40
ACPR (dB), ALT1 (dB)
Gain (dB), Efficiency (%)
45
0.1
N-CDMA. 1.2288 MHz Channel
Bandwidth. ACPR Measured in 30 KHz
Bandwidth @ ±885 KHz Offset. PAR =
9.8 dB @ 0.01% Probability on CCDF
0.01
-80
N-CDMA IS-95 (Pilot, Sync,
Paging, Traffic Codes 8 - 13)
0.001
-85
0.1
1
0
1
1
2
Pout (W PEP)
3
4
5
6
7
8
9
10
Peak-to-Average (dB)
N-CDMA spectrum. Pout= 0.3 W, Vdd=28V, Idq=40mA.
PAR = 9.8 dB @ 0.01% Probability on CCDF
20
1.2288 MHz Channel BW
10
0
-10
dB
-20
-30
-40
-50
-60
-70
2.012
ACPR in 30
KHz BW
ACPR in 30
KHz BW
ALT1 in 30
KHz BW
2.014
ALT1 in 30
KHz BW
2.016
2.018
2.020
2.022
Frequency (GHz)
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
13
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 2140 MHz Application Circuit
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W PEP, Delta F=1 MHz
0
Gain
IM3
IM7
40
-20
35
-10
Gain
IM3
IM7
40
-20
30
-30
20
-40
10
-50
0
2080
2100
2120
2140
2160
2180
Gain (dB), Efficiency (%)
30
IMD(dBc), IRL (dB)
-35
20
-40
15
-45
10
-50
5
-55
-60
2200
0
-60
0
0.5
1
1.5
2
2.5
3
Pout (W PEP)
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=30mA, Freq=2140 MHz
CW Gain, Efficiency, IRL vs Frequency
Vdd=28V, Idq=30mA, Pout=3W
60
50
-10
45
-12
40
-14
14
40
13
30
12
20
Gain
Efficiency
11
10
10
Gain (dB), Efficiency (%)
50
Efficiency (%)
15
Gain (dB)
-30
25
Frequency (MHz)
16
-25
Efficiency
IM5
35
30
0.5
1
1.5
2
2.5
3
-20
20
-22
15
-24
10
-26
5
-28
3.5
Pout (W)
303 S. Technology Court
Broomfield, CO 80021
-18
25
0
0
-16
Gain
Efficiency
IRL
0
2080
2100
2120
2140
2160
2180
Input Return Loss (dB)
Gain (dB), Efficiency (%)
50
Efficiency
IM5
IRL
IMD (dBc)
60
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=30mA, Freq=2140 MHz, Delta F=1 MHz
-30
2200
Frequency (MHz)
Phone: (800) SMI-MMIC
14
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Typical Performance Curves in 2140 MHz Application Circuit
2 carrier W-CDMA spectrum. Pout= 0.4 W, Vdd=28V,
Idq=30mA. PAR = 9.3 dB @ 0.01% Probability on CCDF
2 Carrier WCDMA Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=30mA, Freq=2140 MHz, Delta F=10 MHz
20
-40
18
Gain
Efficiency
IM3
ACPR
10
-42
16
-44
14
-46
12
-48
10
-50
8
-52
3.84 MHz Channel BW
0
3.84 MHz Channel Bandwidth,
PAR = 9.3 dB
@ 0.01% Probability (CCDF)
6
4
-54
ACPR (dBc), IM3 (dBc)
-20
dB
Gain (dB), Efficiency (%)
-10
-30
-40
-50
-56
-60
2
-58
0
-60
0.45
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
IM3 in 3.84
MHz BW
-70
2.12
2.13
2.14
20
100
-40
Efficiency
14
-46
12
-48
10
-50
8
-52
3.84 MHz Channel Bandwidth,
PAR = 9.3 dB
@ 0.01% Probability (CCDF)
-56
-58
0
-60
0.45
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
Peak-to-Average (dB)
Pout (W AVG)
303 S. Technology Court
Broomfield, CO 80021
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset. IM3
Measured in 3.84 MHz Bandwidth @ ±10 MHz
Offset. PAR = 9.3 dB @ 0.01% Probability on
CCDF
-54
2
0
10
Probability (%)
-44
ACPR (dBc)
Gain (dB), Efficiency (%)
16
4
2.17
-42
ACPR
6
2.16
CCDF W-CDMA 3GPP. Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test
Single Carrier WCDMA Gain, Efficiency, ACPR vs Pout
Vdd=28V, Idq=30mA, Freq=2140 MHz
Gain
2.15
IM3 in 3.84
MHz BW
Frequency (GHz)
Pout (W AVG)
18
ACPR in
3.84 MHz
ACPR in
3.84 MHz
Phone: (800) SMI-MMIC
15
http://www.sirenza.com
EDS-104157 Rev H
10
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Impedance data
Impedance Data
Device
under test
Zsource
Zload
400
9.3 + j 35.0
80.0 + j 9.4
450
9.9 + j 43.0
67.7 + j 5.6
500
12.3 + j 30.6
57.3 + j 16.1
850
4.0 + j 16.7
20.0 + j 28.0
880
3.7 + j 16.0
18.8 + j 30.0
910
3.4 + j 15.3
18.0 + j 31.5
940
3.4 + j 14.8
18.0 + j 33.5
960
3.5 + j 14.2
18.6 + j 35.0
1800
1.7 - j 2.6
3.0 + j 6.3
1840
1.9 - j 3.0
3.15 + j 6.15
1880
2.1 - j 3.5
3.3 + j 6.0
1930
2.3 - j 3.9
3.45 + j 5.8
1960
2.5 - j 4.4
3.6 + j 5.7
1990
2.7 - j 4.9
3.75 + j 5.55
2110
2.85 - j 5.3
3.9 + j 5.4
2140
3.1 - j 5.8
4.05 + j 5.25
2170
3.25 - j 6.2
4.2 + j 5.1
Output
Matching
Network
Input
Matching
Network
Z source
Frequency
(MHz)
Z load
Zsource and Zload are the optimal impedances presented to the SLD-1026Z when operating at 28V, Idq=50mA, Pout=3W PEP
Loadpull contours available at www.sirenza.com on the SLD-1026Z page.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
16
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
400 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-7.
Bill of Materials - 400 MHz Application Circuit
Reference Designation
L1
L3
L2
C10
C1, C2, C11, C20
C18
C19, C22
J1, J2
J3
R1
R2
R3
R30
R5
R7
R9
R90
RT1
U1
6 Screws
6 Washers
PCB
Heatsink
303 S. Technology Court
Broomfield, CO 80021
Description
IND, 8.2 nH 5% 0603
IND, 12 nH 5% 0603
IND, 30 nH 5% 0603
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
Connector SMA END 0.037
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 200 Ohm 0603
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
THERMISTOR 100K 5% 603
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
Phone: (800) SMI-MMIC
17
Mfg
Coilcraft
Coilcraft
Coilcraft
AVX
AVX
Kemet
Panasonic
Johnson
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
Panasonic
National
various
various
Rogers
various
Mfg part #
0603CS-8N2XJLW
0603CS-12NXJLW
0603CS-30NXJLW
0603YG104ZA2A
06035C102KAT2A
T494D106M035AS
ECJ2YB1H104K
142-0751-821
640455-2
ERJ-3EKF3240V
ECR-104493-201
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
ERT-J1VV104J
LM3480IM3-5.0
4350
-
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
800 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-6.
Bill of Materials - 800 MHz Application Circuit
Reference Designation
C1, C2
C12,C21
C5
L1
C10
C11, C20
C18
C19, C22
J1, J2
J3
R1
R2
R3
R30
R5
R7
R9
R90
R31, R32
RT1
U1
6 Screws
6 Washers
PCB
Heatsink
303 S. Technology Court
Broomfield, CO 80021
Description
CAP 68 PF 250V 5% 0603
CAP, 100 PF, 50V, 5%, 0402
CAP 2.4 PF 250V +/- 0.1pF 0603
IND, 9.5 nH 5% 0603
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
Connector SMA END 0.037
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 2.7 Ohm 0603
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
RES 0 , 0402
THERMISTOR 100K 5% 603
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
Phone: (800) SMI-MMIC
18
Mfg
ATC
Phillips
ATC
Coilcraft
AVX
AVX
Kemet
Panasonic
Johnson
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
KOA
Panasonic
National
various
various
Rogers
Mfg part #
600S680JT250XT
0402CG101J9B200
600S2R4BT250XT
0603CS-9N5XJLW
0603YG104ZA2A
06035C102KAT2A
T494D106M035AS
ECJ2YB1H104K
142-0751-821
640455-2
ERJ-3EKF3240V
ECR-104493-2R7
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
RK73ZETTP
ERT-J1VV104J
LM3480IM3-5.0
4350
various
-
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
900 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-2.
Bill of Materials - 900 MHz Application Circuit
Reference Designation
C1
C2
C21
C5
L1
C10
C11, C20
C12
C18
C19, C22
J1, J2
J3
R1
R2
R3
R30
R5
R7
R9
R90
Description
CAP 9.2 PF 250V 5% 0603
CAP 68 PF 250V 5% 0603
CAP 56 PF 250V 5% 0603
CAP 0.5 PF 250V 1% 0603
IND, 12 nH 5% 0603
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 68PF 250V 5% 603 LF
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
Connector SMA END 0.037
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 2.7 Ohm 0603
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
Mfg
ATC
ATC
ATC
ATC
Coilcraft
AVX
AVX
ATC
Kemet
Panasonic
Johnson
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
Mfg part #
600S9R2JT250XT
600S680JT250XT
600S560JT250XT
600S0R5BT250XT
0603CS-120XJB
0603YG104ZA2A
06035C102KAT2A
600S680JT250XT
T494D106M035AS
ECJ2YB1H104K
142-0751-821
640455-2
ERJ-3EKF3240V
ECR-104493-2R7
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
R31, R32
RT1
U1
6 Screws
6 Washers
PCB
Heatsink
RES 0 , 0402
THERMISTOR 100K 5% 603
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
KOA
Panasonic
National
various
various
Rogers
various
RK73ZETTP
ERT-J1VV104J
LM3480IM3-5.0
4350
-
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
19
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
1840 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-5.
Bill of Materials - 1840 MHz Application Circuit
Reference Designation
C1, C2
C3
C4
C5
C6
C21
C10
C11, C20
C18
C19, C22
J1, J2
J3
R1
R2
R3
R30
R5
R7
R9
R90
R31, R32
RT1
U1
6 Screws
6 Washers
PCB
Heatsink
303 S. Technology Court
Broomfield, CO 80021
Description
CAP 27 PF 250V 5% 0603
CAP 1.2 PF 250V 1% 0603
CAP 3.9 PF 250V 1% 0603
CAP 2.7 PF 250V 1% 0603
CAP 1.5 PF 250V 1% 0603
CAP 27 PF 250V 5% 0402
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
Connector SMA END 0.037
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 2.7 Ohm 0402
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
RES 1.8 OHM, 1%, 1/16W, 0402
THERMISTOR 100K 5% 603
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
Phone: (800) SMI-MMIC
20
Mfg
ATC
ATC
ATC
ATC
ATC
ATC
AVX
AVX
Kemet
Panasonic
Johnson
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
Panasonic
Panasonic
National
various
various
Rogers
various
Mfg part #
600S270JT250XT
600S1R2BT250XT
600S3R9BT250XT
600S2R7BT250XT
600S1R5BT250XT
600L270JT200T
0603YG104ZA2A
06035C102KAT2A
T494D106M035AS
ECJ2YB1H104K
142-0751-821
640455-2
ERJ-3EKF3240V
ERJ-2GEJ2R7X
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
ERJ-2RKF1R8V
ERT-J1VV104J
LM3480IM3-5.0
4350
-
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
1960 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-4.
Bill of Materials - 1960 MHz Application Circuit
Reference Designation
C1, C2
C4
C5
C6
C21
C10
C11, C20
C18
C19, C22
J1, J2
J3
R1
R2
R3
R30
R5
R7
R9
R90
RT1
R31, R32
U1
6 Screws
6 Washers
PCB
Heatsink
303 S. Technology Court
Broomfield, CO 80021
Description
CAP 27 PF 250V 5% 0603
CAP 3.9 PF 250V 1% 0603
CAP 2.2 PF 250V 1% 0603
CAP 2.0 PF 250V 1% 0603
CAP 27 PF 250V 5% 0402
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
Connector SMA END 0.037
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 2.7 Ohm 0402
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
THERMISTOR 100K 5% 603
RES 0 , 0402
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
Phone: (800) SMI-MMIC
21
Mfg
ATC
ATC
ATC
ATC
ATC
AVX
AVX
Kemet
Panasonic
Johnson
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
Panasonic
KOA
National
various
various
Rogers
various
Mfg part #
600S270JT250XT
600S3R9BT250XT
600S2R2BT250XT
600S2R0BT250XT
600L270JT200T
0603YG104ZA2A
06035C102KAT2A
T494D106M035AS
ECJ2YB1H104K
142-0751-821
640455-2
ERJ-3EKF3240V
ERJ-2GEJ2R7X
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
ERT-J1VV104J
RK73ZETTP
LM3480IM3-5.0
4350
-
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
2017 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-8.
Bill of Materials - 2017 MHz Application Circuit
Reference Designation
C1, C2
C4
C5
C6
C10
C11, C20
C18
C19, C22
C12, C21
J1, J2
CAP 27 PF 250V 5% 0603
CAP 3.9 PF 250V 1% 0603
CAP 2.2 PF 250V 1% 0603
CAP 3.3 PF 250V 1% 0603
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
CAP 27 PF 250V 5% 0402
Connector SMA END 0.037
Mfg
ATC
ATC
ATC
ATC
AVX
AVX
Kemet
Panasonic
ATC
Johnson
Mfg part #
600S270JT250XT
600S3R9BT250XT
600S2R2BT250XT
600S3R3BT250XT
0603YG104ZA2A
06035C102KAT2A
T494D106M035AS
ECJ2YB1H104K
600L270JT200T
142-0751-821
J3
R1
R2
R3
R30
R5
R7
R9
R90
R31, R32
RT1
U1
6 Screws
6 Washers
PCB
Heatsink
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 2.7 Ohm 0402
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
RES 0 , 0402
THERMISTOR 100K 5% 603
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
KOA
Panasonic
National
various
various
Rogers
various
640455-2
ERJ-3EKF3240V
ERJ-2GEJ2R7X
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
RK73ZETTP
ERT-J1VV104J
LM3480IM3-5.0
4350
-
303 S. Technology Court
Broomfield, CO 80021
Description
Phone: (800) SMI-MMIC
22
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
2140 MHz Application Circuit
To receive Gerber files, DXF
drawings, and assembly recommendations for the test board with fixture,
contact applications
support at [email protected].
Ordering info:
This circuit has Sirenza part number
SLD1026Z-EVAL-3.
Bill of Materials - 2140 MHz Application Circuit
Reference Designation
C1, C2
C4
C3
C5
C6
C10
C11, C20
C18
C19, C22
C21
CAP 27 PF 250V 5% 0603
CAP 2.4 PF 250V 1% 0603
CAP 0.5 PF 250V 1% 0603
CAP 3.9 PF 250V 1% 0603
CAP 2.2 PF 250V 1% 0603
CAP 0.1 UF 16V 10% 0603
CAP 1000 PF 50V 10% 603
CAP 10 UF 35V 20% TAN T ELECT
CAP 0.1 UF 50V 10% 805
CAP 27 PF 250V 5% 0402
Mfg
ATC
ATC
ATC
ATC
ATC
AVX
AVX
Kemet
Panasonic
ATC
Mfg part #
600S270JT250XT
600S2R4BT250XT
600S0R5BT250XT
600S3R9BT250XT
600S2R2BT250XT
0603YG104ZA2A
06035C102KAT2A
T494D106M035AS
ECJ2YB1H104K
600L270JT200T
J1, J2
J3
R1
R2
R3
R30
R5
R7
R9
R90
R31, R32
RT1
U1
6 Screws
6 Washers
PCB
Heatsink
Connector SMA END 0.037
Connector MTA SMD R/A 2 PIN
RES 324 1/16W 1% 603
RES 2.7 Ohm 0402
POT TRIM 500 OHM 2MM
RES 49.9 1/16W 1% 603
RES 130 1/16W 1% 603
RES 210 1/16W 1% 603
RES 0 1/16W 5% 603
RES 1.0K 1/16W 1% 603
RES 0 , 0402
THERMISTOR 100K 5% 603
IC VOLT REG 100 MA 5 V SOT-23
SCREW #2-56 PHILIPS PAN HEAD
WASHER #2 FLAT SS
PCB, 30 mils thick Dk=3.48
machined aluminum
Johnson
Amp
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Phillips
Panasonic
Panasonic
KOA
Panasonic
National
various
various
Rogers
various
142-0751-821
640455-2
ERJ-3EKF3240V
ERJ-2GEJ2R7X
EVM-2WSX80B52
ERJ-EKF49R9V
ERJ-3EKF1300V
9C06031A2100FKHFT
ERJ-3GSY0R00V
ERJ-3EKF1001V
RK73ZETTP
ERT-J1VV104J
LM3480IM3-5.0
4350
-
303 S. Technology Court
Broomfield, CO 80021
Description
Phone: (800) SMI-MMIC
23
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Heatsink drawing for Application Circuits
Additional Application Circuit Information
Additional application circuits have been designed which incorporate 2 of the SLD-1026Z’s in a balanced configuration. Refer to Sirenza app note
AN-090, “2 X SLD-1026Z LDMOS EVALUATION CIRCUITS” for details. App notes available at wwwlsirenza.com.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
24
http://www.sirenza.com
EDS-104157 Rev H
Preliminary
SLD-1026Z 3 Watt LDMOS FET
Package Outline (dimensions in mm [in]):
Recommended Metal Land Pattern (dimensions in mm [in]):
Part Number Ordering Information
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
25
Part Number
Devices Per
Reel
Reel Size
SLD-1026Z
500
7’’
http://www.sirenza.com
EDS-104157 Rev H