SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power applications requiring high efficiency, excellent linearity, and unit-tounit repeatability. It is internally matched to 50 ohms. Pb RoHS Compliant & Green Package 925-960 MHz Class AB 65W Power Amplifier Module Functional Block Diagram Vgs +3V DC to +6 V DC +28V DC 1 Vds1 180 o 0 Product Features o Gnd Gnd Balun Balun RFin RFout Gnd Gnd 0 Vgs 2 o 180 o +3V DC to +6 V DC Vds 2 +28V DC • • • • • • • Available in RoHS compliant packaging 50 W RF impedance 65W Output P1dB Single Supply Operation : Nominally 28V High Gain: 17 dB at 942 MHz High Efficiency : 44% at 942 MHz ESD Protection: JEDEC Class 2 (2000V HBM) Applications • • • • Case Flange = Ground Key Specifications Symbol Frequency Base Station PA driver Repeater CDMA GSM / EDGE Parameter Units Min. Typ. Max. Frequency of Operation MHz 925 - 960 - P1dB Output Power at 1dB Compression, 943 MHz W 60 65 Gain Gain at 60W PEP, 942MHz and 943MHz dB 16 17 - Peak-to-Peak Gain Variation, 60W PEP, 925 - 960MHz dB - 0.3 0.5 Efficiency Drain Efficiency at 60W PEP, 942MHz and 943MHz % 32 34 - Efficiency Drain Efficiency at 60W CW, 942MHz % Input Return Loss 60W PEP Output Power, 925 - 960MHz dB 3rd Order IMD Product, 60W PEP, 942MHz and 943MHz Signal Delay from Pin 3 to Pin 8 Gain Flatness IRL IMD Delay Phase Linearity RTH 44 - - -15 -10 dBc - -31 -27 nS - 4.0 - Deviation from Linear Phase (Peak-to-Peak) Deg - 0.5 - Thermal Resistance (Junction to Case) ºC/W 1.5 T TFlange = 25ºC Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =300mA Quality Specifications Parameter ESD Rating MTTF Description Unit Human Body Model Volts Typical 2000 200oC Channel Hours 1.2 X 106 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104211Rev E SDM-09060-B1F 925-960 MHz 65W Power Amp Module Pin Description Pin # Function 1 VGS1 Description 2,4,7,9 Ground Module Topside ground. 3 RF Input Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. 5 VGS2 LDMOS FET Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 6 VD2 LDMOS FET Q2 drain bias. See Note 1. 8 RF Output 10 VD1 Flange Ground LDMOS FET Q1 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. LDMOS FET Q1 drain bias. See Note 1. Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for Power Modules. Simplified Device Schematic 1 Note 1: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the VD leads to accommodate modulated signals. 10 2 9 Q1 Note 2: Gate voltage must be applied to VGS leads simultaneously with or after application of drain voltage to prevent potentially destructive oscillations. Bias voltages should never be applied to a module unless it is properly terminated on both input and output. 8 3 Q2 4 7 6 5 Note 3: The required VGS corresponding to a specific IDQ will vary from module to module and may differ between VGS1 and VGS2 on the same module by as much as ±0.10 volts due to the normal die-to-die variation in threshold voltage for LDMOS transistors. Case Flange = Ground Absolute Maximum Ratings Value Unit Drain Voltage (VDD) Parameters 35 V RF Input Power +37 dBm Load Impedance for Continuous Operation Without Damage 5:1 VSWR Control (Gate) Voltage, VDD = 0 VDC 15 V Output Device Channel Temperature +200 ºC Operating Temperature Range -20 to +90 ºC Storage Temperature Range -40 to +100 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one. Note 4: The threshold voltage (VGSTH) of LDMOS transistors varies with device temperature. External temperature compensation may be required. See Sirenza application notes AN-067 LDMOS Bias Temperature Compensation. Note 5: This module was designed to have it's leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700° F, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN054 (www.sirenza.com) for further installation instructions. Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104211 Rev E SDM-09060-B1F 925-960 MHz 65W Power Amp Module Typical Performance Curves 2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Idq=0.6A, Pout=60W PEP, Delta F=1 MHz -10 -20 40 -30 30 -40 20 -50 10 -60 45 -25 40 -30 35 -35 30 -40 25 -45 20 -50 15 -55 10 0 900 920 940 960 -60 Gain IM3 IM7 5 -70 980 0 -65 20 40 60 80 -70 100 Pout (W PEP) CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=0.6A, Pout=60W 50 CW Gain, Efficiency vs Pout Vdd=28V, Idq=0.6A, Freq=942 MHz 20 0 60 19 55 18 50 17 45 16 40 15 35 14 30 13 25 Gain Efficiency 30 -10 IRL 20 -15 Gain (dB) -5 Input Return Loss (dB) 40 Gain (dB), Efficiency (%) Efficiency IM5 0 Frequency (MHz) Gain Efficiency 12 11 10 0 900 IMD (dBc) 50 0 -20 920 940 960 -25 980 15 10 9 5 0 20 40 60 80 0 100 Pout (W) Frequency (MHz) 303 S. Technology Court Broomfield, CO 80021 20 10 8 Efficiency (%) Gain (dB), Efficiency (%) 60 Efficiency IM5 IRL Gain (dB), Efficiency (%) Gain IM3 IM7 IMD(dBc), IRL (dB) 70 2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104211 Rev E SDM-09060-B1F 925-960 MHz 65W Power Amp Module Typical Performance Curves (cont’d) Two Tone Gain, Efficiency, IRL, IMD vs Supply Voltage Pout=60W PEP, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz 60 -5 50 0 Gain IRL IM5 50 Efficiency 40 -10 IRL Gain (dB), Efficiency (%) Gain Input Return Loss (dB) Gain (dB), Efficiency (%) 60 0 -20 30 -30 20 -40 -50 -15 20 -20 10 -25 10 -30 0 18 20 22 24 26 28 30 32 -60 18 20 22 24 26 28 30 Vds (Volts) Vds (Volts) CW Gain vs Pout for various Idq Vds=28V, Freq=942 MHz IM3 vs Pout for various Idq Vds=28V, Freq=942 MHz, Delta F=1 MHz 20 -10 40 30 0 Efficiency IM3 IM7 Input Return Loss (dB), IMD (dBc). CW Gain, Efficiency, IRL vs Supply Voltage Pout=60W, Idq=0.6A, Freq=942 MHz 32 -25 -30 Idq=0.4A Idq=0.8A 19.5 -35 Idq=0.5A Idq=0.6A Idq=0.5A 19 Gain (dB) Gain (dB) Idq=0.7A Idq=0.4A -40 Idq=0.6A -45 Idq=0.8A -50 Idq= 0.7A 18.5 -55 -60 18 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 Pout (W PEP) Pout (W) Note: Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104211 Rev E SDM-09060-B1F 925-960 MHz 65W Power Amp Module Package Outline Drawing Note: Refer to Application note AN054, “Detailed Installation Instructions for Power Modules” for detailed mounting information. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104211 Rev E