ONSEMI NCS2510DG

NCS2510
Product Preview
1.0 GHz Current Feedback
Op Amp with Enable
Feature
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NCS2510 is a 1.0 GHz current feedback monolithic operational
amplifier featuring high slew rate and low differential gain and phase
error. The current feedback architecture allows for a superior
bandwidth and low power consumption. This device features an
enable pin.
Features
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 1.0 GHz Typ
Slew Rate 1500 V/ms
Supply Current 8.5 mA
Input Referred Voltage Noise 6.0 nV/ ǸHz
THD −60 dBc (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 150 mA
Enable Pin Available
Pin Compatible with AD8001
Pb−Free Packages are Available
Applications
•
•
•
•
•
•
High Resolution Video
Line Driver
High−Speed Instrumentation
Wide Dynamic Range IF Amp
Set Top Box
NTSC/PAL/HDTV
NORMAILIZED GAIN(dB)
1
8
1
Gain = +2
VS = ±5V
RF = 400W
RL = 150W
1
6
6
SOT23−6
(TSOP−6)
SN SUFFIX
CASE 318G
1
YB1YW
G
1
YB1, N2510 = NCS2510
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
NC
1
−IN
2
+IN
3
VEE
4
8
EN
−
7
VCC
+
6
OUT
5
NC
(Top View)
0
−1
SOT23−6 (TSOP−6) PINOUT
VOUT = 2.0V
−2
−3
VOUT = 1.0V
−4
−5
−6
0.01
N2510
ALYW
G
SO−8 PINOUT
3
2
8
SO−8
D SUFFIX
CASE 751
VOUT = 0.5V
0.1
1
10
100
FREQUENCY (MHz)
1000
10k
OUT
1
VEE
2
+IN
3
6 VCC
+
•
•
•
•
•
•
•
•
•
MARKING
DIAGRAMS
−
5 EN
4 −IN
(Top View)
Figure 1. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. P0
1
Publication Order Number:
NCS2510/D
NCS2510
PIN FUNCTION DESCRIPTION
Pin
(SO−8)
Pin
(SOT23/SC70)
Symbol
Function
6
1
OUT
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
4
2
VEE
Negative Power Supply
3
3
+IN
Non−inverted Input
VCC
ESD
ESD
+IN
−IN
VEE
2
4
−IN
Inverted Input
7
6
VCC
Positive Power Supply
See Above
8
5
EN
Enable
VCC
EN
ESD
VEE
1, 8
N/A
NC
No Connect
ENABLE PIN TRUTH TABLE
Enable
High
Low*
Disabled
Enabled
*Default open state
VCC
+IN
OUT
−IN
CC
VEE
Figure 2. Simplified Device Schematic
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2
NCS2510
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
Vdc
Input Voltage Range
VI
vVS
Vdc
Input Differential Voltage Range
VID
vVS
Vdc
Output Current
IO
100
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, Junction−to−Air
SO−8
SOT23−6
°C/W
RqJA
139
121
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
1800
Maximum Power Dissapation (mW)
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage. To ensure proper operation, it is
important to observe the derating curves.
1600
1400
SOT23 Pkg
1200
1000
SO−8 Pkg
800
600
400
200
0
−50
−25
0
25
50
75
100
Ambient Temperature (C)
125
Figure 3. Power Dissipation vs. Temperature
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3
150
NCS2510
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
1000
450
AV = +2.0
120
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
1500
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 2.0 V
AV = +2.0, Vstep = 2.0 V
9.0
7.0
(10%−90%) AV = +2.0, Vstep = 2.0 V
1.5
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
55
ns
tOFF
Turn−off Time
55
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−60
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−62
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−66
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
34
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 2.0 Vp−p
55
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
6.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
10
3.0
pAń ǸHz
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NCS2510
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−5.0
0
+5.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
6.0
mV/°C
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 4)
"3.0
"6.0
mA
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
+40
−10
nA/°C
Input Offset Voltage
Temperature Coefficient
Input Bias Current
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 4)
VIL
Input Low Voltage (Enable)
(Note 4)
2.5
V
−2.5
V
INPUT CHARACTERISTICS
VCM
CMRR
"3.0
V
(See Graph)
55
dB
+Input (Non−Inverting)
−Input (Inverting)
100
50
kW
W
1.0
pF
0.1
W
"3.0
V
"120
mA
10
V
Input Common Mode Voltage
Range
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Range
IO
Output Current
"90
POWER SUPPLY
VS
Operating Voltage Supply
Range
IS,ON
Power Supply Current −
Enabled
VO = 0 V
8.5
mA
IS,OFF
Power Supply Current −
Disabled
VO = 0 V
0.11
mA
PSRR
Power Supply Rejection
Ratio
(See Graph)
60
dB
4. Guaranteed by design and/or characterization.
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5
NCS2510
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p
600
300
AV = +2.0
100
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
1000
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 1.0 V
AV = +2.0, Vstep = 1.0 V
12
9.0
(10%−90%) AV = +2.0, Vstep = 1.0 V
2.0
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
55
ns
tOFF
Turn−off Time
55
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−60
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−62
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−66
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = .5 Vp−p
28
dBm
f = 5.0 MHz, VO = 1.0 Vp−p
55
dBc
SFDR
Spurious−Free Dynamic
Range
eN
Input Referred Voltage Noise
f = 1.0 MHz
6.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
10
3.0
pAń ǸHz
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NCS2510
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−5.0
0
+5.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
6.0
mV/°C
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5)
"3.0
"6.0
mA
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
+40
−10
nA/°C
Input Offset Voltage
Temperature Coefficient
Input Bias Current
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 5)
VIL
Input Low Voltage (Enable)
(Note 5)
1.875
V
−1.875
V
INPUT CHARACTERISTICS
VCM
CMRR
"1.0
V
(See Graph)
55
dB
+Input (Non−Inverting)
−Input (Inverting)
100
50
kW
W
1.0
pF
0.1
W
"1.2
V
"120
mA
5.0
V
Input Common Mode Voltage
Range
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Range
IO
Output Current
"90
POWER SUPPLY
VS
Operating Voltage Supply
Range
IS,ON
Power Supply Current −
Enabled
VO = 0 V
8.0
mA
IS,OFF
Power Supply Current −
Disabled
VO = 0 V
0.09
mA
PSRR
Power Supply Rejection
Ratio
(See Graph)
60
dB
5. Guaranteed by design and/or characterization.
+
−
VIN
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 400 W, RL = 150 W)
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7
3
5
2
4
NORMAILIZED GAIN(dB)
NORMAILIZED GAIN(dB)
NCS2510
1
0
−1
VOUT = 2.0V
−2
−3
Gain = +2
VS = ±5V
RF = 400W
RL = 150W
−4
−5
−6
0.01
0.1
VOUT = 1.0V
2
1
0
−1
VOUT = 2.0V
−2
Gain = +2
VS = ±5V
RF = 400W
RL = 150W
−3
−4
VOUT = 0.5V
1
10
100
FREQUENCY (MHz)
3
1000
−5
0.01
10k
3
5
2
4
1
0
−1
−2
−3
−4
−5
Gain = +2
VS = ±5V
VOUT = 2V
RF = 400W
RL = 150W
−6
0.01
0.1
1
10
100
FREQUENCY (MHz)
1000
10k
3
Gain = +1
2
1
0
Gain = +2
−1
VS = ±5V
VOUT = 0.5V
RF = 400W
RL = 150W
−2
−3
−4
1
10
100
FREQUENCY (MHz)
VOUT = 0.5V
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
NORMAILIZED GAIN(dB)
NORMAILIZED GAIN(dB)
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
0.1
VOUT = 1.0V
1000
−5
0.01
10k
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
0.1
1
10
100
FREQUENCY (MHz)
1000
10k
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
VS = ±5V
Figure 9. Small Signal Step Response
Vertical: 1V/div
Horizontal: 10ns/div
Figure 10. Large Signal Step Response
Vertical: 2V/div
Horizontal: 10ns/div
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NCS2510
0.03
0.01
DIFFERENTIAL PHASE (°)
DIFFERENTIAL GAIN (%)
0.02
0.02
3.58MHz
4.43MHz
10MHz
20MHz
50MHz
VS = 5V
RL = 150W
Gain = +2
0
0.01
20MHz
50MHz
0.005
0
−0.005
−0.01
−0.02
−0.03
−0.8
3.58MHz
4.43MHz
10MHz
0.015
−0.01
−0.015
−0.6
0.2
0.4
−0.4 −0.2
0
OFFSET VOLTAGE (V)
0.6
VS = 5V
RL = 150W
Gain = +2
−0.02
−0.8
0.8
Figure 11. Differential Gain
−0.6
0.2
0.4
−0.4 −0.2
0
OFFSET VOLTAGE (V)
Figure 12. Differential Phase
0.13
11
85°C
0.125
10.5
0.12
CURRENT (mA)
85°C
CURRENT (mA)
0.8
0.6
10
25°C
9.5
9
0.11
0.105
0.1
−40°C
0.095
0.09
−40°C
8.5
25°C
0.115
0.085
8
0.08
4
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
4
Figure 13. Supply Current vs. Power Supply
(Enabled)
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
Figure 14. Supply Current vs. Temperature
(Disabled)
1M
8
100k
7
6.5
TRANSIMPEDANCE (W)
OUPUT VOLTAGE (VPP)
7.5
25°C
6
85°C
5.5
−40°C
5
4.5
4
10k
1k
100
10
3.5
3
4
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
1
0.01
11
0.1
1
10
100
FREQUENCY (MHz)
1000
Figure 16. Transimpedance (ROL) vs. Frequency
Figure 15. Output Voltage Swing vs. Supply Voltage
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9
10k
NCS2510
VS = ±5V
VS = ±5V
EN
EN
OUT
OUT
Output Signal: Squarewave, 10MHz, 2VPP
Output Signal: Squarewave, 10MHz, 2VPP
Figure 17. Turn ON Time Delay
Vertical: (EN) 500mV/div (OUT) 1V/div
Horizontal: 40ns/div
Figure 18. Turn OFF Time Delay
Vertical: (EN) 500mV/div (OUT) 1V/div
Horizontal: 40ns/div
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10
NCS2510
General Design Considerations
use a current feedback amplifier with the output shorted
directly to the inverting input.
The current feedback amplifier is optimized for use in
high performance video and data acquisition systems. For
current feedback architecture, its closed−loop bandwidth
depends on the value of the feedback resistor. The
closed−loop bandwidth is not a strong function of gain, as is
for a voltage feedback amplifier, as shown in Figure 19.
10
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances
at the output and inverting input nodes as it can effect
peaking and bandwidth. A space (3/16″ is plenty) should be
left around the signal lines to minimize coupling. Also,
signal lines connecting the feedback and gain resistors
should be short enough so that their associated inductance
does not cause high frequency gain errors. Line lengths less
than 1/4″ are recommended.
RF = 300 W
5
GAIN (dB)
Printed Circuit Board Layout Techniques
RF = 400 W
RF = 500 W
0
RF = 600 W
−5
Video Performance
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and
effectively masks transmission line and other parasitic
capacitances from the amplifier output stage.
−10
−15
−20
0.1
AV = +2
VCC = +5 V
VEE = −5 V
1.0
10
100
1000
10000
FREQUENCY (MHz)
Figure 19. Frequency Response vs. RF
ESD Protection
All device pins have limited ESD protection using internal
diodes to power supplies as specified in the attributes table
(see Figure 20). These diodes provide moderate protection
to input overdrive voltages above the supplies. The ESD
diodes can support high input currents with current limiting
series resistors. Keep these resistor values as low as possible
since high values degrade both noise performance and
frequency response. Under closed−loop operation, the ESD
diodes have no effect on circuit performance. However,
under certain conditions the ESD diodes will be evident. If
the device is driven into a slewing condition, the ESD diodes
will clamp large differential voltages until the feedback loop
restores closed−loop operation. Also, if the device is
powered down and a large input signal is applied, the ESD
diodes will conduct.
NOTE: Human Body Model for +IN and –IN pins are
rated at 0.8kV while all other pins are rated at
2.0kV.
The −3.0 dB bandwidth is, to some extent, dependent on
the power supply voltages. By using lower power supplies,
the bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
Feedback and Gain Resistor Selection for Optimum
Frequency Response
A current feedback operational amplifier’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum
flatness. Normally, lowering RF resistor from its
recommended value will peak the frequency response and
extend the bandwidth while increasing the value of RF
resistor will cause the frequency response to roll off faster.
Reducing the value of RF resistor too far below its
recommended value will cause overshoot, ringing, and
eventually oscillation.
Since each application is slightly different, it is worth
some experimentation to find the optimal RF for a given
circuit. A value of the feedback resistor that produces
X0.1 dB of peaking is the best compromise between
stability and maximal bandwidth. It is not recommended to
VCC
Internal
Circuitry
External
Pin
VEE
Figure 20. Internal ESD Protection
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11
NCS2510
ORDERING INFORMATION
Package
Shipping †
NCS2510SNT2
SOT23−6 (TSOP−6)
3000 Tape & Reel
NCS2510SNT2G
SOT23−6 (TSOP−6)
(Pb−Free)
3000 Tape & Reel
NCS2510D*
SO−8
98 Units/Rail
NCS2510DR2*
SO−8
2500 Tape & Reel
NCS2510DG*
SO−8
(Pb−Free)
98 Units/Rail
NCS2510DR2G*
SO−8
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact ON Semiconductor for ordering information.
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12
NCS2510
PACKAGE DIMENSIONS
SO−8
D SUFFIX
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
13
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8 _
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NCS2510
PACKAGE DIMENSIONS
SOT23−6 (TSOP−6)
SN SUFFIX
CASE 318G−02
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
L
6
S
1
5
4
2
3
B
MILLIMETERS
DIM MIN
MAX
A
2.90
3.10
B
1.30
1.70
C
0.90
1.10
D
0.25
0.50
G
0.85
1.05
H 0.013 0.100
J
0.10
0.26
K
0.20
0.60
L
1.25
1.55
M
0_
10 _
S
2.50
3.00
D
G
M
J
C
0.05 (0.002)
K
H
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NCS2510/D