ON Semiconductor 2N5655 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS • Excellent DC Current Gain – • hFE = 30–250 @ IC = 100 mAdc Current–Gain – Bandwidth Product – fT = 10 MHz (Min) @ IC = 50 mAdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Symbol 2N5655 2N5657 Unit VCEO 250 350 Vdc Collector–Base Voltage VCB 275 375 Vdc Emitter–Base Voltage VEB 6.0 Vdc Collector Current – Continuous Peak IC 0.5 1.0 Adc Base Current IB 0.25 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 20 0.16 Watts W/C TJ, Tstg –65 to +150 C Symbol Max Unit θJC 6.25 C/W Collector–Emitter Voltage Operating and Storage Junction Temperature Range 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 40 30 50 mH X 20 200 Hg RELAY 10 0 + TO SCOPE 6.0 V Y 300 25 50 V 50 75 100 TC, CASE TEMPERATURE (°C) 125 + - 1.0 150 Figure 2. Sustaining Voltage Test Circuit Figure 1. Power Derating Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 7 1 Publication Order Number: 2N5655/D 2N5655 2N5657 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 2N5655 2N5657 VCEO(sus) 250 350 – – Vdc 2N5655 2N5657 V(BR)CEO 250 350 – – Vdc – – 0.1 0.1 – – – – 0.1 0.1 1.0 1.0 – – 10 10 – 10 25 30 15 5.0 – 250 – – – – – 1.0 2.5 10 VBE – 1.0 Vdc fT Cob 10 – MHz – 25 pF hfe 20 – – OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) ICEO 2N5655 2N5657 Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100C) (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100C) 2N5655 2N5657 2N5655 2N5657 Collector Cutoff Current (VCB = 275 Vdc, IE = 0) (VCB = 375 Vdc, IE = 0) 2N5655 2N5657 mAdc ICEX mAdc µAdc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO µAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) hFE Collector–Emitter Saturation Voltage (1) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) VCE(sat) Base–Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Small–Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data for 2N5655 Series. (1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. (2) fT is defined as the frequency at which |hfe| extrapolates to unity. IC, COLLECTOR CURRENT (AMP) 1.0 0.2 1.0 ms d c Second Breakdown Limit Thermal Limit @ TC = 25°C Bonding Wire Limit Curves apply below rated VCEO 2N5655 0.1 0.05 0.02 0.01 500 µs TJ = 150°C 2N5657 20 30 40 60 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Vdc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C – V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 µs 0.5 – 600 Figure 3. Active–Region Safe Operating Area http://onsemi.com 2 2N5655 2N5657 300 hFE , DC CURRENT GAIN 200 VCE = 10 V VCE = 2.0 V TJ = +150°C 100 70 +100°C 50 +25°C 30 20 -55°C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 70 100 200 300 500 Figure 4. Current Gain 1.0 300 200 VBE(sat) @ IC/IB = 10 C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 10 20 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 100 70 50 30 20 TJ = +25°C IC/IB = 5.0 10 0.1 500 Cob 0.2 Figure 5. “On” Voltages 10 2.0 t, TIME (s) µ 1.0 50 100 10 IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5657, only) VCC = 100 V, VBE(off) = 0 V IC/IB = 10 5.0 0.5 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance t, TIME (s) µ tr 5.0 TJ = +25°C Cib td 0.1 ts 2.0 tf 1.0 VCC = 100 V 0.5 0.05 0.01 1.0 VCC = 300 V (Type 2N5657, only) 0.2 0.02 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 0.1 1.0 500 Figure 7. Turn–On Time 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) Figure 8. Turn–Off Time http://onsemi.com 3 200 500 2N5655 2N5657 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. 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