® FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description • 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 220 nC) • Low Crss (typical 200 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply. • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D ! " G! G D S TO-247 FQH Series G DS ! " " " TO-3P ! FQA Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FQH90N15/FQA90N15 Unit 150 V 90 63.5 A A 360 A ±25 V Single Pulsed Avalanche Energy (Note 2) 1400 mJ Avalanche Current (Note 1) 90 A EAR Repetitive Avalanche Energy (Note 1) 37.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns PD Power Dissipation 375 2.5 W W/°C -55 to +175 °C 300 °C (Note 1) (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2004 Fairchild Semiconductor Corporation FQH90N15 / FQA90N15 Rev. B 1 Min. Max. Unit -- 0.4 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET QFET Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 150 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.15 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 150V, VGS = 0V VDS = 120V, TC = 150°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 25V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25V, VDS = 0V -- -- -100 nA 2.0 -- 4.0 V -- 0.014 0.018 Ω -- 68 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 45A gFS Forward Transconductance VDS = 40V, ID = 45A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 6700 8700 pF -- 1400 1800 pF -- 200 260 pF -- 105 220 ns -- 760 1500 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 75V, ID = 90A RG = 25Ω (Note 4, 5) VDS = 120V, ID = 90A VGS = 10V (Note 4, 5) -- 470 950 ns -- 410 830 ns -- 220 285 nC -- 43 -- nC -- 110 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 90 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 360 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 90A dIF/dt =100A/µs (Note 4) -- 175 -- ns -- 0.97 -- µC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 90A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 ID, Drain Current [A] 10 ID , Drain Current [A] Top : 1 10 10 2 10 1 10 0 o 175 C o 25 C o -55 C Notes : 1. VDS = 30V Notes : 1. 250µs Pulse Test o 2. TC = 25 C -1 0 10 2. 250µs Pulse Test 10 1 10 -1 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 0.12 0.09 VGS = 10V 0.06 VGS = 20V 0.03 2 10 1 10 0 10 o 175 C 25oC Notes : 1. VGS = 0V o Note : TJ = 25 C 2. 250µs Pulse Test 0.00 -1 0 50 100 150 200 250 10 300 0.0 0.4 0.8 ID , Drain Current [A] 1.2 1.6 2.0 2.4 VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 18000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12000 Ciss Coss 9000 6000 Notes : 1. VGS = 0 V Crss 2. f = 1 MHz 3000 V DS = 30V 10 VGS, Gate-Source Voltage [V] Capacitance [pF] 15000 V DS = 75V VDS = 120V 8 6 4 2 Note : ID = 90 A 0 0 -1 10 0 10 0 1 10 3 FQH90N15 / FQA90N15 Rev. B 50 100 150 200 250 Q G, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250 µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 Notes : 1. V GS = 10 V 0.5 2. ID = 45 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 150 175 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 Operation in This Area is Limited by R DS(on) 3 10 10 ID, Drain Current [A] ID, Drain Current [A] 80 10 µs 100 µs 2 1 ms DC 10 ms 1 10 Notes : o 1. TC = 25 C 0 10 60 40 20 o 2. TJ = 175 C 3. Single Pulse 0 25 -1 10 0 1 10 2 10 10 50 75 100 125 o T C, Case Temperature [ C] VDS, Drain-Source Voltage [V] D = 0 .5 10 -1 N o te s : 1 . Z ? JC ( t) = 0 .4 0 .2 o C /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 0 .1 3 . T JM - T C = P DM * Z ? JC (t) 0 .0 5 PDM 0 .0 2 10 0 .0 1 -2 t1 s in g le p u ls e Z θJC (t), Thermal Response Figure 11. Transient Thermal Response Curve 10 -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 4 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Typical Performance Characteristics (Continued) FQH90N15 / FQA90N15 N-Channel Power MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp tp 5 FQH90N15 / FQA90N15 Rev. B VDS (t) VDD DUT 10V ID (t) Time www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters 7 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com FQH90N15 / FQA90N15 N-Channel Power MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 8 FQH90N15 / FQA90N15 Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I14