MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 19 Watts Avg. Power Gain — 13.6 dB Efficiency — 23% IM3 — - 37.5 dBc ACPR — - 41 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF21085R3 MRF21085SR3 MRF21085LSR3 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21085R3 CASE 465A - 06, STYLE 1 NI - 780S MRF21085SR3, MRF21085LSR3 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 224 1.28 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.78 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 MRF21085R3 MRF21085SR3 MRF21085LSR3 1 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 3 3.9 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.18 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 6 — S Crss — 3.6 — pF OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13.6 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 20 23 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 — - 37.5 - 35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) ACPR — - 41 - 38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — - 12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (continued) MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2 Go to: www.freescale.com Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps — 13.6 — dB Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η — 36 — % Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL — - 12 — dB P1dB — 100 — W Freescale Semiconductor, Inc... FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz) MOTOROLA RF DEVICE DATA MRF21085R3 MRF21085SR3 MRF21085LSR3 3 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. VGG R3 R1 R4 B1 + R2 C5 C4 C3 C7 C2 Z4 RF INPUT Z1 Z2 Freescale Semiconductor, Inc... Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C8 Z5 Z6 x 0.084″ x 0.084″ x 0.800″ x 0.050″ x 0.800″ x 0.084″ x 0.084″ x 0.070″ C10 + C11 C12 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 RF OUTPUT C6 DUT 0.750″ 1.015″ 0.480″ 0.750″ 0.610″ 0.885″ 0.720″ 0.800″ C9 + Z8 Z3 C1 VDD L1 + 0.030″ Glass Teflon, Keene GX - 0300 - 55 - 22, εr = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR Board PCB Figure 1. MRF21085 Test Circuit Schematic Table 1. MRF21085 Test Circuit Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C2 10 pF Chip Capacitor, ATC #100B100JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C7 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11, C12 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100″ ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10 R1 1.0 kΩ, 1/8 W Chip Resistor R2 180 kΩ, 1/8 W Chip Resistor R3, R4 10 Ω, 1/8 W Chip Resistors MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 4 Go to: www.freescale.com Freescale Semiconductor, Inc. C8 C7 C2 R1 B1 R2 C3 L1 R3 WB1 CUT OUT C5 C4 C1 C10 R4 C9 WB2 C11 C12 C6 Freescale Semiconductor, Inc... MRF21085 Rev 3 Figure 2. MRF21085 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21085R3 MRF21085SR3 MRF21085LSR3 5 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. −40 10 −45 ACPR 5 −50 0 −55 1 −30 −35 35 30 −40 −45 25 3rd Order −50 20 5th Order −55 15 η −60 10 7th Order 5 100 −65 30 10 40 4 10 Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Pout, OUTPUT POWER (WATTS Avg.) N−CDMA −25 24 −30 −35 −40 1150 mA −45 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 1000 mA −30 IM3 −40 ACPR 14 −50 G ps 12 −55 4 −20 16 850 mA −50 VDD = 28 Vdc 2−Carrier W−CDMA Pout = 19 W (Avg.) 10 MHz Carrier Spacing IDQ = 1000 mA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) 18 1300 mA −10 IRL 20 IDQ = 700 mA 0 η 22 10 100 2090 2110 2130 2150 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance 14.5 60 −60 2190 42 −24 40 13 30 η 20 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) Figure 7. CW Performance η, DRAIN EFFICIENCY (%) 13.5 12.5 41 50 G ps η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) IMD 14 40 −26 39 −27 38 −28 37 −29 36 −30 IDQ = 1000 mA f = 2140 MHz 10 MHz Tone Spacing 35 0 100 130 −25 η 10 −31 34 24 25 26 27 28 −32 29 VDD, DRAIN SUPPLY (V) Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6 Go to: www.freescale.com η, DRAIN EFFICIENCY (%) G ps 15 Freescale Semiconductor, Inc... −35 45 VDD = 28 Vdc IDQ = 1000 mA f1 = 2135 MHz f2 = 2145 MHz IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 20 −30 IM3 −25 IMD, INTERMODULATION DISTORTION (dBc) 25 −25 η VDD = 28 Vdc, IDQ = 1000 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3 (dBc), ACPR (dBc) 30 IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Freescale Semiconductor, Inc. IDQ = 1300 mA G ps , POWER GAIN (dB) 1150 mA 14 1000 mA 850 mA 13.5 700 mA 13 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 12.5 10 100 −10 IRL 35 −15 η VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 1000 mA 10 MHz Tone Spacing 30 25 −20 −25 20 IMD −30 15 Gps −35 10 2095 2110 2125 Pout, OUTPUT POWER (WATTS) PEP 2140 2155 −40 2185 2170 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance −20 0 −25 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz −10 −30 3rd Order −20 −35 (dB) IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... 4 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 14.5 G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS −40 −30 f1 3.84 MHz BW f2 3.84 MHz BW −ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW −IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW −40 5th Order −45 −50 7th Order −50 −60 −55 0.1 −70 1 10 30 −20 −15 −10 −5 0 5 10 15 Df, TONE SPACING (kHz) f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA RF DEVICE DATA 20 MRF21085R3 MRF21085SR3 MRF21085LSR3 7 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... f = 2170 MHz Zo = 5 Ω Zload f = 2110 MHz f = 2170 MHz Zsource f = 2110 MHz VDD = 28 V, IDQ = 1000 mA, Pout = 19 W Avg. f MHz Zsource Ω Zload Ω 2110 1.10 - j3.71 1.23 - j2.10 2140 1.11 - j3.57 1.26 - j1.92 2170 1.12 - j3.40 1.25 - j1.76 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Input and Output Impedance MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8 Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA MRF21085R3 MRF21085SR3 MRF21085LSR3 9 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10 Go to: www.freescale.com Freescale Semiconductor, Inc. PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb Freescale Semiconductor, Inc... N M T A M B M ccc M T A S M T A M B M aaa M T A (LID) B M (LID) ccc H R (INSULATOR) M (INSULATOR) B M M C F E A T A SEATING PLANE CASE 465 - 06 ISSUE F NI - 780 MRF21085R3 (FLANGE) 4X U (FLANGE) 1 K 2X 2 B (FLANGE) D bbb M T A M B M N R (LID) ccc M M T A M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) MOTOROLA RF DEVICE DATA F T SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B DIM A B C D E F G H K M N Q R S aaa bbb ccc DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE CASE 465A - 06 ISSUE F NI - 780S MRF21085SR3, MRF21085LSR3 MRF21085R3 MRF21085SR3 MRF21085LSR3 11 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc... Freescale Semiconductor, Inc. Information in this document is provided solely to enable system and software implementers to use Motorola products. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE MRF21085/D DATA ◊ For More Information On This Product, 12 Go to: www.freescale.com