PHILIPS BYV29X-600

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
FEATURES
BYV29X-600
SYMBOL
QUICK REFERENCE DATA
VR = 600V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
k
1
VF ≤ 1.03 V
a
2
IF(peak) = 7 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV29X-600 is supplied in the
conventional leaded SOD113
(SOT186a) package.
PINNING
PIN
SOD113 (SOT186a)
DESCRIPTION
case
1
cathode
2
anode
tab
isolated
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
IF(AV)
Average forward current1
IFRM
IFSM
Tstg
Tj
CONDITIONS
MIN.
MAX.
UNIT
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
600
600
600
V
V
V
square wave; δ = 0.5;
Tmb ≤ 100 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
Tmb ≤ 100 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
Storage temperature
Operating junction temperature
-
9
A
-
18
A
-
70
77
A
A
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-hs
Thermal resistance junction to
heat sink
Thermal resistance junction to
ambient
Rth j-a
CONDITIONS
in free air.
MIN.
TYP.
MAX.
UNIT
-
-
5.5
K/W
-
60
-
K/W
1 Neglecting switching and reverse current losses.
February 2000
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29X-600
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from
both terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
0.90
1.05
1.30
2.0
0.1
40
1.03
1.25
1.45
50
0.35
70
V
V
V
µA
mA
nC
-
50
60
ns
-
3.0
5.5
A
-
3.2
-
V
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
Reverse recovery charge
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
February 2000
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29X-600
I
dI
F
F
Forward dissipation, PF (W)
Ths(max) (C)
18
dt
16
t
1.9
14
rr
a = 1.57
2.8
84
12
time
62
2.2
4
10
106
8
6
Q
I
I
R
2
150
0
rrm
0
Fig.1. Definition of trr, Qs and Irrm
I
128
4
100%
10%
s
2
4
6
8
10
Average forward current, IF(AV) (A)
12
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
trr / ns
1000
F
10A
time
100
VF
1A
V
Tj = 25 C
Tj = 150 C
fr
VF
10
time
Forward dissipation, PF (W)
-diF/dt
10
Fig.2. Definition of Vfr
100
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
100
Ths(max) (C)
Cd / pF
20
D = 1.0
15
67.5
0.5
10
0.2
10
95
0.1
tp
D = tp/T
122.5
5
T
150
0
0
2
4
6
8
10
Average forward current, IF(AV) (A)
12
1
1
14
VR / V
100
1000
Fig.6. Typical junction capacitance Cd at f = 1 MHz;
Tj = 25˚C
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x √D.
February 2000
10
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29X-600
10
Irrm / A
1000
Qs / nC
IF=10A
10A
2A
1
10A
100
IF=2A
IF=1A
0.1
10
25 C
150 C
Tj = 25 C
Tj = 100C
0.01
10
-dIF/dt (A/us)
1
1
100
1
-diF / dt
Fig.7. Maximum Irrm at Tj = 25˚C and 100˚C.
30
BYW29
IF / A
10
100
Fig.9. Maximum Qs at Tj = 25˚C
10
Transient thermal impedance, Zth j-hs (K/W)
Tj=150 C
Tj=25 C
1
20
0.1
typ
max
10
PD
0.01
0
0
0.5
1
VF / V
1.5
0.001
1us
2
Fig.8. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
February 2000
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29F
10s
Fig.10. Transient thermal impedance Zth j-mb= f(tp)
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29X-600
MECHANICAL DATA
Dimensions in mm
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-leads TO-220 'full pack'
SOD113
Net Mass: 2 g
A
A1
E
P
z
q
m
T
D
HE
j
(1)
L1
k
Q
L
1
2
c
w M
b
b1
e
0
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
E
e
HE
max.
j
k
L
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
0.7
0.4
15.8
15.2
10.3
9.7
5.08
19.0
2.7
2.3
0.6
0.4
14.4
13.5
L1
(1)
3.3
2.8
m
P
Q
q
T
w
z(2)
6.5
6.3
3.2
3.0
2.6
2.3
2.6
2.55
0.4
0.8
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
OUTLINE
VERSION
SOD113
REFERENCES
IEC
JEDEC
2-lead TO-220
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-11
Fig.11. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 2000
5
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV29X-600
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000
6
Rev 1.100