Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYQ60EW series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V a2 3 a1 1 IO(AV) = 60 A IRRM ≤ 0.2 A k 2 trr ≤ 35 ns GENERAL DESCRIPTION PINNING Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. PIN The BYQ60EW series is supplied in the conventional leaded SOT429 (TO247) package. SOT429 (TO247) DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage - IO(AV) Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode - 60 A - 60 A - 380 414 A A - 0.2 A - 0.2 A -40 - 150 150 ˚C ˚C BYQ60EW IFRM IFSM IRRM IRSM Tstg Tj square wave δ = 0.5; Tmb ≤ 82 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 82 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature MAX. -150 150 150 150 UNIT -200 200 200 200 V V V ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ December 1998 1 MIN. MAX. UNIT - 8 kV Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ60EW series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient per diode both diodes conducting in free air Rth j-a MIN. TYP. MAX. UNIT - 45 0.85 0.6 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.73 0.95 1.07 10 1 10 27 0.85 1.1 1.2 200 2 20 35 V V V µA mA nC ns - 0.7 - V ELECTRICAL CHARACTERISTICS characteristics arre per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs trr Reverse recovery charge Reverse recovery time Vfr Forward recovery voltage IF = 30 A; Tj = 150˚C IF = 30 A IF = 60 A VR = VRWM VR = VRWM; Tj = 100 ˚C IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 1 A; dIF/dt = 10 A/µs December 1998 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYQ60EW series F Forward dissipation, PF (W) Tmb(max) (C) 120.25 35 dt 1.9 BYQ60EW 124.5 30 t 2.2 rr 25 4 time Q I I R 100% 10% s Fig.1. Definition of trr, Qs and Irrm I 128.75 20 133 15 137.25 10 141.5 5 145.75 0 150 0 rrm a = 1.57 2.8 5 10 15 20 25 Average forward current, IF(AV) (A) 30 Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). F trr / ns 1000 BYQ60EW IF = 1 A time 100 VF V fr VF 10 1 10 dIF/dt (A/us) time Fig.2. Definition of Vfr Forward dissipation, PF (W) 45 Fig.5. Typical trr at Tj = 25 ˚C. Tmb(max) (C) D = 1.0 0.5 35 Irrm / A 10 111.75 BYQ60EW 40 100 BYQ60EW 116 120.25 30 0.1 0.2 124.5 25 1 IF = 1 A 128.75 20 tp 15 D = tp/T 133 137.25 0.1 141.5 10 5 T 0 0 10 20 30 40 Average forward current, IF(AV) (A) 145.75 150 0.01 50 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. December 1998 10 -dIF/dt (A/us) 100 Fig.6. Typical Irrm at Tj = 25 ˚C. 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ60EW series Forward Current, IF (A) 60 55 50 45 40 35 30 25 20 15 10 5 0 BYQ60EW Tj = 150 C Tj = 25 C typ max 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 Forward Voltage, VF (V) Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Qs / nC BYQ60EW 100 IF=5A 10 IF=2A IF=1A 1 1 10 -dIF/dt (A/us) 100 Fig.8. Typical Qs at Tj = 25 ˚C. Transient Thermal Impedance, Zth j-mb (K/W) BYQ60EW 1 Single pulse 0.1 PD tp 0.01 t 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.9. Transient thermal impedance; Zth j-hs = f(tp). December 1998 4 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ60EW series MECHANICAL DATA Dimensions in mm 5.3 max 16 max 1.8 Net Mass: 5 g 5.3 o 3.5 max 7.3 3.5 21 max 15.5 max seating plane 2.5 15.5 min 4.0 max 1 2 3 0.9 max 2.2 max 1.1 3.2 max 5.45 0.4 M 5.45 Fig.10. SOT429 (TO247); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". December 1998 5 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ60EW series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1998 6 Rev 1.000