Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series FEATURES SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance QUICK REFERENCE DATA VR = 150 V/ 200 V k 1 VF ≤ 0.9 V a 2 IF(AV) = 14 A IRRM ≤ 0.2 A trr ≤ 30 ns GENERAL DESCRIPTION PINNING Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. PIN The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package. SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage MIN. BYV79E IF(AV) IFRM IFSM IRRM IRSM Tstg Tj Tmb ≤ 145˚C 1 Average forward current square wave δ = 0.5; Tmb ≤ 120 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 120 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 Non-repetitive peak reverse tp = 100 µs current Storage temperature Operating junction temperature - MAX. -150 150 150 150 UNIT -200 200 200 200 V V V - 14 A - 28 A - 150 160 A A - 0.2 0.2 A A -40 - 150 150 ˚C ˚C 1. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ July 1998 1 MIN. MAX. UNIT - 8 kV Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a CONDITIONS in free air MIN. TYP. MAX. UNIT - - 2 K/W - 60 - K/W MIN. TYP. MAX. UNIT - 0.83 0.95 1.2 0.5 5 6 20 0.90 1.05 1.4 1.3 50 15 30 V V V mA µA nC ns - 13 1 22 - ns V STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs trr1 Reverse recovery charge Reverse recovery time trr2 Vfr Reverse recovery time Forward recovery voltage IF = 14 A; Tj = 150˚C IF = 14 A IF = 50 A VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/µs July 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYV79E series 0.5A F dt IF t 0A rr time Q 10% s I rec = 0.25A IR 100% trr2 I I R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm I Fig.4. Definition of trr2 20 F BYV79 PF / W Tmb(max) / C 110 D = 1.0 Vo = 0.744 V Rs = 0.0112 Ohms 0.5 120 15 0.2 time 0.1 10 130 VF V tp I 5 D= tp T 140 fr t T VF 0 time Fig.2. Definition of Vfr 0 5 10 15 IF(AV) / A 20 150 25 Fig.5. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x √D. R 15 PF / W Tmb(max) / C 120 a = 1.57 BYV79 Vo = 0.744 V Rs = 0.0112 Ohms 1.9 2.2 D.U.T. 2.8 10 Voltage Pulse Source Current shunt 140 5 to ’scope 0 0 5 IF(AV) / A 10 150 15 Fig.6. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Fig.3. Circuit schematic for trr2 July 1998 130 4 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series trr / ns 1000 Qs / nC 1000 IF=10A IF=10A 5A 2A 100 100 IF=1A 10 10 1 1 10 dIF/dt (A/us) 1.0 100 1.0 Fig.7. Maximum trr at Tj = 25 ˚C. 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 10 -dIF/dt (A/us) 10 IF=10A Transient thermal impedance, Zth j-mb (K/W) 1 1 IF=2A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 25 ˚C. tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E 10s Fig.11. Transient thermal impedance; Zth j-mb = f(tp). IF / A 60 Tj = 150 C 50 Tj = 25 C 40 30 20 typ 10 max 0 0 0.5 1.0 VF / V 1.5 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj July 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV79E series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 6 Rev 1.200