BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: BSS8402DW NEW PRODUCT Features · · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Also Available in Lead Free Version · · · · · · S1 B C S2 G2 D1 G H Mechanical Data · · SOT-363 A G1 D2 Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 5 Terminal Connections: See Diagram Marking: KNP (See Page 5) Weight: 0.008 grams (approx.) Maximum Ratings - Total Device K M J D F Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Max 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 TOP VIEW M 0.10 0.25 D1 a 0° 8° G2 S2 All Dimensions in mm Q2 Q1 S1 G1 D2 Symbol Value Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 1.0MW Continuous Pulsed Continuous Continuous @ 100°C Pulsed Pd 200 mW 625 °C/W Tj, TSTG -55 to +150 °C @ TA = 25°C unless otherwise specified Symbol Value Units VDSS 60 V VDGR 60 V VGSS ±20 ±40 V ID 115 73 800 mA Maximum Ratings P-CHANNEL - Q2, BSS84 Section Characteristic Units RqJA Maximum Ratings N-CHANNEL - Q1, 2N7002 Section Drain Current (Note 1) Min A @ TA = 25°C unless otherwise specified Characteristic Gate-Source Voltage L Dim @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS £ 20KW VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 1) Continuous ID -130 mA Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30380 Rev. 4 - 2 1 of 5 www.diodes.com BSS8402DW ã Diodes Incorporated NEW PRODUCT Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section Characteristic Symbol Min Typ BVDSS 60 @ TA = 25°C unless otherwise specified Max Unit Test Condition 70 ¾ V VGS = 0V, ID = 10mA µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage IDSS ¾ ¾ 1.0 500 IGSS ¾ ¾ ±10 nA VGS(th) 1.0 ¾ 2.5 V VDS = VGS, ID =-250mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage RDS (ON) ¾ 3.2 4.4 7.5 13.5 W VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ 22 50 pF Output Capacitance Coss ¾ 11 25 pF Reverse Transfer Capacitance Crss ¾ 2.0 5.0 pF Turn-On Delay Time tD(ON) ¾ 7.0 20 ns Turn-Off Delay Time tD(OFF) ¾ 11 20 ns Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance @ Tj = 25°C @ Tj = 125°C VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Electrical Characteristics P-CHANNEL - Q2, BSS84 Section Characteristic VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -50 ¾ ¾ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ¾ ¾ ¾ ¾ ¾ ¾ -15 -60 -100 µA µA nA VDS = -50V, VGS = 0V, TJ = 25°C VDS = -50V, VGS = 0V, TJ = 125°C VDS = -25V, VGS = 0V, TJ = 25°C Gate-Body Leakage IGSS ¾ ¾ ±10 nA VGS = ±20V, VDS = 0V VGS(th) -0.8 ¾ -2.0 V VDS = VGS, ID = -1mA RDS (ON) ¾ ¾ 10 W VGS = -5V, ID = 0.100A gFS .05 ¾ ¾ S VDS = -25V, ID = 0.1A Input Capacitance Ciss ¾ ¾ 45 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 12 pF Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 18 ¾ ns OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS Note: VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V 2. Short duration test pulse used to minimize self-heating effect. DS30380 Rev. 4 - 2 2 of 5 www.diodes.com BSS8402DW N-CHANNEL - 2N7002 SECTION 7 ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 0.8 0.6 Tj = 25°C 10V 6 5 VGS = 5.0V 5.5V 4 5.0V 3 0.4 VGS = 10V 2 0.2 1 2.1V 0 0 0 1 3 2 0 5 4 0.2 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 6 3.0 5 2.5 4 ID = 500mA ID = 50mA 2.0 3 2 1.5 1 VGS = 10V, ID = 200mA 1.0 -55 0 -30 -5 20 70 45 95 120 145 0 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 10 250 VDS = 10V 9 Pd, POWER DISSIPATION (mW) VGS, GATE SOURCE CURRENT (V) NEW PRODUCT 1.0 8 7 6 TA = +125°C TA = +75°C 5 4 3 TA = -55°C TA = +25°C 200 150 100 50 2 1 0 0 0 0 0.2 0.4 0.6 ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics DS30380 Rev. 4 - 2 25 50 75 100 125 150 175 200 1 0.8 3 of 5 www.diodes.com TA, AMBIENT TEMPERATURE (°C) Fig. 6 Max Power Dissipation vs. Ambient Temperature BSS8402DW P-CHANNEL - BSS84 SECTION 600 -1.0 VGS = 5V 500 -0.8 4.5V ID, DRAIN CURRENT (A) ID, DRAIN SOURCE CURRENT (mA) NEW PRODUCT TA = 25°C 400 300 3.5V 200 3.0V 100 0 1 2 4 3 TA = 25°C TA = 125°C -0.4 -0.2 2.5V 0 TA = -55°C -0.6 5 -0.0 0 VDS, DRAIN SOURCE (V) Fig. 7, Drain Source Current vs. Drain Source Voltage -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 8, Drain Current vs. Gate Source Voltage 10 15 VGS = -10V ID = -0.13A 9 8 12 7 6 9 5 4 6 3 2 3 TA = 125°C 1 TA = 25°C 0 0 1 5 4 3 2 VGS, GATE TO SOURCE (V) Fig. 9, On Resistance vs. Gate Source Voltage 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 10, On-Resistance vs. Junction Temperature 25.0 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.2 -0.0 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 11, On-Resistance vs. Drain Current DS30380 Rev. 4 - 2 4 of 5 www.diodes.com BSS8402DW NEW PRODUCT Ordering Information Notes: (Note 3) Device Packaging Shipping BSS8402DW-7 SOT-363 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: BSS8402DW-7-F. Marking Information YM KNP = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KNP Date Code Key Year 2003 2004 2005 2006 2007 2008 2009 Code P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30380 Rev. 4 - 2 5 of 5 www.diodes.com BSS8402DW