WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES n Access Times of 15*, 17, 20, 25, 35, 45, 55ns n Commercial, Industrial and Military Temperature Ranges n Packaging n TTL Compatible Inputs and Outputs 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400). 68 lead, 40mm Hermetic Low Profile CQFP, 3.5mm (0.140") (Package 502)1, Package to be developed. n 5 Volt Power Supply 68 lead, Hermetic CQFP (G2T)1, 22.4mm (0.880") square (Package 509) 4.57mm (0.180") height. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3). 68 lead, Hermetic CQFP (G1U), 23.9mm (0.940") square (Package 519) 3.57mm (0.140") height. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 3). 68 lead, Hermetic CQFP (G1U), 23.9mm (0.940") square (Package 524) 4.06mm (0.160") height. n Weight WS512K32-XH1X - 13 grams typical WS512K32-XG2TX1 - 8 grams typical WS512K32-XG1UX - 5 grams typical WS512K32-XG1TX - 5 grams typical WS512K32-XG4TX1 - 20 grams typical n Low Power CMOS n Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation * 15ns Access Time available only in Commercial and Industrial Temperature. This speed is not fully characterized and is subject to change without notice. n Organized as 512Kx32, User Configurable as 1Mx16 or 2Mx8 FIG. 1 Note 1: Package Not Recommended For New Design PIN CONFIGURATION FOR WS512K32N-XH1X TOP VIEW PIN DESCRIPTION I/O0-31 Data Inputs/Outputs A 0-18 Address Inputs WE 1-4 Write Enables CS 1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM November 2001 Rev. 9 1 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS512K32-XXX FIG. 2 PIN CONFIGURATION FOR WS512K32-XG4TX1 TOP VIEW PIN DESCRIPTION I/O0-31 Data Inputs/Outputs A 0-18 Address Inputs WE Write Enables CS 1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM Note 1: Package Not Recommended For New Design FIG. 3 PIN CONFIGURATION FOR WS512K32-XG2TX 1, WS512K32-XG1TX AND WS512K32-XG1UX TOP VIEW PIN DESCRIPTION The White 68 lead CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the CQFJ has the TCE and lead inspection advantage of the CQFP form. I/O0-31 Data Inputs/Outputs A 0-18 Address Inputs WE 1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM Note 1: Package Not Recommended For New Design White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 2 WS512K32-XXX TRUTH TABLE ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit CS OE WE Mode Data I/O Power H L L L X L H X X H H L Standby Read Out Disable Write High Z Data Out High Z Data In Standby Active Active Active TA -55 +125 °C TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 7.0 V Operating Temperature Storage Temperature Supply Voltage VCC -0.5 CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage V IH 2.2 V CC + 0.3 V Input Low Voltage V IL -0.5 +0.8 V Operating Temp (Mil) TA -55 +125 °C Parameter Symbol Conditions Max OE capacitance COE VIN = 0 V, f = 1.0 MHz WE1-4 capacitance HIP (PGA) CQFP G4T CQFP G2T/G1U/G1T CWE VIN = 0 V, f = 1.0 MHz Unit 50 pF pF 20 50 20 CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance C I/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 50 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol Conditions Min Units Max 10 Input Leakage Current I LI VCC = 5.5, V IN = GND to VCC Output Leakage Current I LO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA ICC x 32 CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 660 mA Operating Supply Current x 32 Mode µA Standby Current I SB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 mA Output Low Voltage V OL IOL = 8mA for 15 - 35ns, IOL = 2.1mA for 45 - 55ns, Vcc = 4.5 0.4 V Output High Voltage VOH IOH = -4.0mA for 15 - 35ns, IOH = -1.0mA for 45 - 55ns, Vcc = 4.5 2.4 V NOTE: DC test conditions: VIH = V CC -0.3V, VIL = 0.3V DATA RETENTION CHARACTERISTICS (TA = -55°C to +125°C) Parameter Data Retention Supply Voltage Symbol Conditions Units Min Max 2.0 V DR CS £ V CC -0.2V 5.5 V Data Retention Current I CCDR1 V CC = 3V 28 mA Low Power Data Retention Current (WS512K32L-XXX) I CCDR2 V CC = 3V 16 mA 3 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS512K32-XXX AC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter -15* Symbol Read Cycle Min Read Cycle Time t RC Address Access Time t AA -17 Max 15 Min -20 Max Min 17 Max 20 15 0 -25 Min Max 25 17 0 Min -45 Max Min 35 20 0 -35 Max 45 25 0 -55 Min Max 55 35 ns 45 0 Units 55 0 0 ns Output Hold from Address Change t OH Chip Select Access Time t ACS 15 17 20 25 35 45 55 ns ns Output Enable to Output Valid t OE 8 9 10 12 25 25 25 ns Chip Select to Output in Low Z t CLZ 1 2 2 2 2 4 4 4 Output Enable to Output in Low Z t OLZ 1 0 0 0 0 0 0 0 Chip Disable to Output in High Z t CHZ 1 12 12 12 12 15 20 20 ns Output Disable to Output in High Z t OHZ 1 12 12 12 12 15 20 20 ns ns ns * 15ns Access Time available only in Commercial and Industrial Temperature. This speed is not fully characterized and is subject to change without notice. 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C) Parameter Symbol Write Cycle -15* Min -17 Max Min -20 Max Min -25 Max Min -35 Max Min -45 Max Min -55 Max Units Min Max Write Cycle Time t WC 15 17 20 25 35 45 55 ns Chip Select to End of Write t CW 13 15 15 17 25 35 50 ns Address Valid to End of Write t AW 13 15 15 17 25 35 50 ns Data Valid to End of Write t DW 10 11 12 13 20 25 25 ns Write Pulse Width t WP 13 15 15 17 25 35 40 ns Address Setup Time t AS 2 2 2 2 2 2 2 ns Address Hold Time t AH 0 0 0 0 0 5 5 ns Output Active from End of Write t OW 1 2 2 3 4 4 5 5 Write Enable to Output in High Z t WHZ 1 Data Hold Time t DH 8 0 9 11 0 0 13 0 15 0 20 0 ns 20 0 * 15ns Access Time available only in Commercial and Industrial Temperature. This speed is not fully characterized and is subject to change without notice. 1. This parameter is guaranteed by design but not tested. 2 . The Address Setup Time of minimum 2ns is for the G2T, G1U and H1 packages. t AS minimum for the G4T package is 0ns. FIG. 4 AC TEST CONDITIONS AC TEST CIRCUIT Parameter Typ Unit Input Pulse Levels VIL = 0, V IH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & I OH programmable from 0 to 16mA. Tester Impedance Z 0 = 75 ý. V Z is typically the midpoint of V OH and V OL . I OL & I OH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 4 ns ns WS512K32-XXX FIG. 5 TIMING WAVEFORM - READ CYCLE FIG. 6 WRITE CYCLE - WE CONTROLLED FIG. 7 WRITE CYCLE - CS CONTROLLED WS32K32-XHX 5 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS512K32-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1 ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Note 1: Package Not Recommended For New Design White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 6 WS512K32-XXX PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)1 The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Note 1: Package Not Recommended For New Design 7 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS512K32-XXX PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U) The White 68 lead G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1U has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 8 WS512K32-XXX PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T) The White 68 lead G1T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1T has the TCE and lead inspection advantage of the CQFP form. ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 9 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WS512K32-XXX ORDERING INFORMATION W S 512K 32 X - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial C = Commercial -40°C to 85°C 0°C to +70°C PACKAGE TYPE: H1 = Ceramic Hex-In-line Package, HIP (Package 400) G2T1 = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) G4T1 = 40mm Low Profile CQFP (Package 502) G1U = 23.9mm Low Profile CQFP (Package 519) G1T = 23.9mm Low Profile CQFP (Package 524) ACCESS TIME (ns) IMPROVEMENT MARK: Blank = Standard Power N = No Connect at pin 21 and 39 in HIP for Upgrades L = Low Power Data Retention ORGANIZATION, 512Kx32 User configurable as 1Mx16 or 2Mx8 SRAM WHITE ELECTRONIC DESIGNS CORP. Note 1: Package Not Recommended For New Design White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com 10 WS512K32-XXX DEVICE TYPE SPEED PACKAGE SMD NO. 512K x 32 SRAM Module 55ns 66 pin HIP (H1) 5962-94611 05HTX 512K x 32 SRAM Module 45ns 66 pin HIP (H1) 5962-94611 06HTX 512K x 32 SRAM Module 35ns 66 pin HIP (H1) 5962-94611 07HTX 512K x 32 SRAM Module 25ns 66 pin HIP (H1) 5962-94611 08HTX 512K x 32 SRAM Module 20ns 66 pin HIP (H1) 5962-94611 09HTX 512K x 32 SRAM Module 17ns 66 pin HIP (H1) 5962-94611 10HTX 512K x 32 SRAM Module 55ns 68 lead CQFP Low Profile (G4T)1 5962-94611 05HYX 512K x 32 SRAM Module 45ns 68 lead CQFP Low Profile (G4T)1 5962-94611 06HYX 512K x 32 SRAM Module 35ns 68 lead CQFP Low Profile (G4T)1 5962-94611 07HYX 512K x 32 SRAM Module 25ns 68 lead CQFP Low Profile (G4T)1 5962-94611 08HYX 512K x 32 SRAM Module 20ns 68 lead CQFP Low Profile (G4T)1 5962-94611 09HYX 512K x 32 SRAM Module 17ns 68 lead CQFP Low Profile (G4T) 5962-94611 10HYX 512K x 32 SRAM Module 55ns 68 lead CQFP (G2T)1 5962-94611 05HMX 512K x 32 SRAM Module 45ns 68 lead CQFP (G2T)1 5962-94611 06HMX 512K x 32 SRAM Module 35ns 68 lead CQFP (G2T)1 5962-94611 07HMX 512K x 32 SRAM Module 25ns 68 lead CQFP (G2T) 1 5962-94611 08HMX 512K x 32 SRAM Module 20ns 68 lead CQFP (G2T)1 5962-94611 09HMX 512K x 32 SRAM Module 17ns 68 lead CQFP (G2T)1 5962-94611 10HMX 512K x 32 SRAM Module 55ns 68 lead CQFP (G1U) 5962-94611 05H9X 512K x 32 SRAM Module 45ns 68 lead CQFP (G1U) 5962-94611 06H9X 512K x 32 SRAM Module 35ns 68 lead CQFP (G1U) 5962-94611 07H9X 512K x 32 SRAM Module 25ns 68 lead CQFP (G1U) 5962-94611 08H9X 512K x 32 SRAM Module 20ns 68 lead CQFP (G1U) 5962-94611 09H9X 512K x 32 SRAM Module 17ns 68 lead CQFP (G1U) 5962-94611 10H9X 1 Note 1: Package Not Recommended For New Design 11 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com