Advance Product Information Ka Band 2 Watt Power Amplifier Key Features and Performance • • • • • • TGA1055-EPU Primary Applications 0.25 um pHEMT Technology 20 dB Nominal Gain 2W Nominal Pout -30 dBc IMR3 @ 26 dBm SCL Bias 7V @ 1.4 A Chip Dimensions 5.89 mm x 3.66 mm • LMDS • Point-to-Point Radio • Satellite Ground Terminal Release Status • Currently shipping Engineering Prototype Units 35 20 33 18 31 16 29 14 27 12 25 10 23 8 21 6 19 4 17 2 15 Power Added Efficiency (%) Output Power (dBm) & Gain (dB) EG1055B Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz Pout Gain PAE 0 5 6 7 8 9 10 11 12 13 14 15 Input Power (dBm ) Chip Dimensions 5.89 mm x 3.66 mm Preliminary Pout, Gain and PAE Data at 29GHz Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 11 Advance Product Information TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information Chip Assembly and Bonding Diagram Reflow process assembly notes: • • • • • AuSn (80/20) solder with limited exposure to temperatures at or above 300♣ C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: • • • • • • • vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: • • • • • thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200♣ C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3