Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319B Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 1.75 dB Nominal Noise Figure 19 dB Nominal Gain 8dBm Pout 3V, 45 mA Self -biased Primary Applications Chip Dimensions 2.235 mm x 1.145 mm • • Preliminary Data, 6-10 Fixtured samples @ 25C Point-to-Point Radio Point-to-Multipoint Communications two 1-mil ball bonds at RF interconnects e 6.0 5 5.0 0 4.0 -5 3.0 S11 -10 (dB) 2.0 -15 1.0 -20 0.0 15.0 -25 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 1 26.0 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 Frequency (GHz) Frequency (GHz) S11 @ 25C NF @ 25C 25 0 -5 20 -10 -15 15 S21 (dB) S22 (dB) -20 -25 10 -30 -35 5 -40 0 -45 1 3 6 8 11 13 16 18 21 23 Frequency (GHz) Gain @ 25C 26 28 31 33 36 38 1 3 6 8 11 13 16 18 21 23 26 28 31 33 36 38 Fre que ncy (GHz) S22 @ 25C Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information August 29, 2000 TGA1319B Vd=3V 100 pF 100 pF 100 pF Gnd TGA1319B - Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information August 29, 2000 TGA1319B Assembly Process Notes Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com