Advance Product Information August 29, 2000 20 - 40 GHz X2 Frequency Multiplier TGC1430F Key Features and Performance • • • • • • 0.25um pHEMT Technology 20 - 40 GHz Output Frequencies 10 - 20 GHz Fundamental Frequencies -12 +/- 2dB Conversion Gain 18 dBm Input Drive Optimum 25dB Fundamental Isolation Primary Applications Chip Dimensions 1.50 mm x 1.50 mm • • 0.0 Conversion Gain (dB) -10.0 -15.0 -20.0 @17.5dBm -25.0 0 35 -5 30 -10 25 -15 20 -20 15 Input Drive of +17.5dBm -30.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 Input Frequency (GHz) Conversion Gain vs Input Frequency (Input @ 17.5dBm) -25 13.5 14.0 14.5 15.0 Input Frequency (GHz) 15.5 10 16.0 Conversion Gain and Fundamental Isolation for 27 - 32 GHz Output Fundamental Isolation (dB) 45 40 35 30 25 20 15 10 5 0 6 8 10 12 14 16 Input Frequency (GHz) 18 20 22 @17.5dBm Fundamental Isolation Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Fund. Isolation (dB) Conversion Gain (dB) -5.0 Point-to-Point Radio Point-to-Multipoint Communications Advance Product Information August 29, 2000 TGC1430F TGC1430F - Recommended Assembly Drawing Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information August 29, 2000 TGC1430F Assembly Process Notes Reflow process assembly notes: •= •= •= •= •= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: •= •= •= •= •= •= •= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: •= •= •= •= •= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200ΓC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com