QSD2030 PLASTIC SILICON PHOTODIODE PACKAGE DIMENSIONS 0.195 (4.95) FEATURES • PIN Photodiode REFERENCE SURFACE • Package type: T-1 3/4 (5mm lens diameter) 0.305 (7.75) • Wide Reception Angle, 40° • Package material and color: Clear epoxy • High Sensitivity 0.040 (1.02) NOM • Peak Sensitivity D= 880 nm 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) minimum from housing. 0.020 (0.51) SQ. (2X) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS CATHODE ANODE (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Reverse Breakdown Voltage Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F VBR PD ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER SCHEMATIC Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 100 Unit °C °C °C °C V mW (TA =25°C) TEST CONDITIONS Peak Sensitivity Wavelength Wavelength Sensitivity Range Reception Angle Forward Voltage IF = 80 mA Reverse Dark Current VR = 20 V, Ee = 0 Reverse Light Current Ee = 0.5 mW/cm2, VR = 5 V, D = 950 nm Capacitance VR = 0, f = 1 MHz, Ee = 0 Rise Time VR = 5 V, RL = 50 1 Fall Time D = 950 nm SYMBOL MIN TYP MAX UNITS DPS DSR 0 VF ID IL C tr tf — 400 — — — 15 — — — 880 — ±20 1.3 — 25 60 5 5 — 1100 — — 5 nm nm Deg. V nA µA pF — — — ns 10/31/01