PD - 93810 PD - 93811 IRF7809A/IRF7811A IRF7809A/IRF7811A PROVISIONAL DATASHEET • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications HEXFET® Chipset for DC-DC Converters Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809A offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S T o p V ie w SO-8 DEVICE RATINGS IRF7809A IRF7811A 30V 28V 8.5 mΩ 12 mΩ QG 73 nC 23 nC Qsw 22.5 nC 7 nC Qoss 30 nC 31 nC VDS RDS(on) Absolute Maximum Ratings Parameter Symbol IRF7809A Drain-Source Voltage VDS 30 Gate-Source Voltage VGS Continuous Drain or Source TA = 25°C Current (VGS ≥ 4.5V) TL = 90°C Pulsed Drain Current Power Dissipation ID IDM TA = 25°C Units 28 V ±12 14.5 11.4 14.2 11.2 100 100 PD 2.5 TJ, TSTG –55 to 150 TL = 90°C Junction & Storage Temperature Range IRF7811A A W 2.4 °C Continuous Source Current (Body Diode) IS 2.5 2.5 Pulsed Source Current ISM 50 50 A Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead www.irf.com RθJA RθJL Max. 50 25 Units °C/W °C/W 1 01/19/00 IRF7809A/IRF7811A Electrical Characteristics IRF7809A Parameter Drain-to-Source Breakdown Voltage* BVDSS Static Drain-Source on Resistance* RDS(on) Gate Threshold Voltage* VGS(th) Drain-Source Leakage Current* IDSS IRF7811A Min Typ Max Min Typ 30 – – 28 – – V 7 8.5 10 12 mΩ V VDS = VGS,ID = 250µA 30 30 µA VDS = 24V, VGS = 0 150 150 1.0 Max Units 1.0 Current* Conditions VGS = 0V, ID = 250µA VGS = 4.5V, I D = 15A VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current* IGSS Total Gate Chg Cont FET* QG 61 75 Total Gate Chg Sync FET* QG 55 73 Pre-Vth Gate-Source Charge QGS1 14 2.7 Post-Vth Gate-Source Charge QGS2 3.5 1.3 Gate to Drain Charge QGD 13.5 4.5 Switch Chg(Qgs2 + Qgd)* Qsw 17 22.5 5.8 7.0 Output Charge* Qoss 25 30 26 31 Gate Resistance RG 1.1 1.8 Turn-on Delay Time td (on) 19 8 Rise Time tr 9 4 ±100 ±100 19 23 17 20.5 nA VGS = ±12V VGS=5V, ID=15A, VDS=16V VGS = 5V, VDS< 100mV VDS = 16V, ID = 15A nC VDS = 16V, VGS = 0 Ω VDD = 16V, ID = 15A ns Turn-off Delay Time td (off) 32 16 Fall Time tf 12 8 Input Capacitance Ciss – 7300 – – 1800 – Output Capacitance Coss – 900 – – 900 – Reverse Transfer Capacitance Crss – 350 – – 60 – Typ Max Min Typ VGS = 5V Clamped Inductive Load pF VDS = 16V, VGS = 0 Source-Drain Rating & Characteristics Parameter Min Diode Forward Voltage* VSD Reverse Recovery Charge Qrr Reverse Recovery Charge (with Parallel Schottky) Qrr(s) 1.0 94 Max Units 1.0 82 V nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IS = 15A 87 74 di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes: * 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Devices are 100% tested to these parameters. www.irf.com IRF7809A/IRF7811A SO-8 Package Outline Part Marking Information www.irf.com 3 IRF7809A/IRF7811A SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA:1 Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630 IR TAIWAN : 16F, Suite B, 319, Sec.2, Tun Hwa South Road, Taipei 10673, Taiwan, R.O.C. Tel : 886-2-2739-4230 http://www.irf.com/ Data and specifications subject to change without notice. 1/00 4 www.irf.com