PD-94031A IRF7811W HEXFET® Power MOSFET for DC-DC Converters • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811W RDS(on) 9.0mΩ QG 18nC Qsw 5.5nC Qoss 12nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25°C Current (VGS ≥ 4.5V) TL = 90°C Pulsed Drain Current Power Dissipation TA = 25°C Symbol IRF7811W VDS 30 VGS ±12 ID 14 IDM 109 13 PD TL = 90°C 3.1 Units V A W 3.0 TJ, TSTG –55 to 150 °C Continuous Source Current (Body Diode) IS 3.8 A Pulsed Source Current ISM 109 Parameter Maximum Junction-to-Ambient RθJA Max. 40 Units °C/W Maximum Junction-to-Lead RθJL 20 °C/W Junction & Storage Temperature Range Thermal Resistance 3/13/01 IRF7811W Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage BVDSS Static Drain-Source on Resistance RDS(on) Gate Threshold Voltage VGS(th) Drain-Source Leakage Current IDSS Min Typ Max Units 30 – – V 9.0 12 mΩ VGS = 4.5V, ID = 15A V VDS = VGS,I D = 250µA 1.0 30 Current* 150 Conditions VGS = 0V, ID = 250µA VDS = 24V, VGS = 0 µA VDS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage Current IGSS ±100 nA Total Gate Chg Cont FET QG 18 Total Gate Chg Sync FET QG 15.6 VGS = 5V, VDS< 100mV Pre-Vth Gate-Source Charge QGS1 6.0 VDS = 16V, ID = 15A Post-Vth Gate-Source Charge QGS2 1.4 Gate to Drain Charge QGD 4.1 Switch Chg(Qgs2 + Qgd) Qsw 5.5 24 VGS=5.0V, ID=15A, VDS=16V nC Output Charge Qoss 12 Gate Resistance RG 2.0 Turn-on Delay Time td (on) 11 Rise Time tr 11 Turn-off Delay Time td 29 Fall Time tf Input Capacitance Ciss – 2335 – Output Capacitance Coss – 400 – Reverse Transfer Capacitance Crss – 119 – Typ Max Units 1.25 V (off) VGS = ±12V VDS = 16V, VGS = 0 Ω VDD = 16V, I D = 15A ns VGS = 5.0V Clamped Inductive Load 9.9 pF VDS = 16V, VGS = 0 Source-Drain Rating & Characteristics Parameter Min Diode Forward Voltage* VSD Reverse Recovery Charge Qrr Reverse Recovery Charge (with Parallel Schottky) Qrr(s) Notes: 2 45 nC Conditions IS = 15A, VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IS = 15A 41 nC di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A. www.irf.com IRF7811W 6.0 ID = 15A VGS, Gate-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 ID = 15A VDS = 16V 4.0 2.0 0.0 80 100 120 140 160 0 TJ , Junction Temperature ( °C) 8 12 16 20 QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 0.020 4000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 3000 C, Capacitance(pF) R DS(on) , Drain-to -Source On Resistance ( Ω ) 4 0.015 ID = 15A 0.010 Ciss 2000 1000 Coss Crss 0.005 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, Gate -to -Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage www.irf.com 7.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage 3 IRF7811W 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 TJ = 150 ° C 10 TJ = 25 ° C 1 V DS = 15V 20µs PULSE WIDTH 0.1 2.5 3.0 3.5 4.0 4.5 TJ = 150 ° C 10 TJ = 25 ° C 1 0.1 0.4 5.0 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) VGS , Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 P DM 1 0.02 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7811W SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0.2 5 (.0 10 ) 4 M A M θ e1 K x 45 ° -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. M IN M AX .0532 .0688 1 .35 1 .75 .0040 .0098 0 .10 0 .25 B .014 .018 0 .36 0 .46 C .0 075 .0 098 0 .19 0.25 D .1 89 .1 96 4 .80 4.98 E .150 .157 3 .81 3 .99 e1 A M IL LIM E T E R S MAX A1 e θ IN C H E S M IN .050 B A S IC 1.2 7 B A S IC .025 B A S IC 0.6 35 B A S IC H .2 284 .2 440 K .011 .019 0 .28 5 .80 0 .48 6.20 L 0 .16 .050 0 .41 1.27 θ 0° 8° 0° 8° R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 5 IRF7811W SO-8 Tape and Reel T E R M INA L NU M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IRE C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0 .0 0 (1 2 .9 92 ) M AX . 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L LIN G D IM E N S IO N : M ILL IM E T E R. 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01 6 www.irf.com