PHILIPS BLT13

DISCRETE SEMICONDUCTORS
DATA SHEET
BLT13
UHF power transistor
Preliminary specification
File under Discrete Semiconductors, SC08b
1996 Apr 12
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
FEATURES
DESCRIPTION
• High efficiency
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT96-1 (SO8) SMD package.
• High gain
• Internal pre-matched input.
APPLICATIONS
handbook, halfpage
8
• Hand-held radio equipment in common emitter class-AB
operation for 1.8 GHz Time Division Multiple Access
(TDMA) communication systems.
5
c
b
PINNING - SOT96-1
e
PIN
SYMBOL
1
DESCRIPTION
1, 8
b
base
2, 4, 5, 7
e
emitter
3, 6
c
collector
4
MAM227
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
f
(MHz)
VCE
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Pulsed, class-AB
1800
6
2
≥6
≥50
1996 Apr 12
2
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
1
A
Ptot
total power dissipation
−
1
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
175
°C
Ts = 130 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
VALUE
UNIT
45
K/W
Ptot = 1 W; Ts = 130 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 5 mA
20
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
10
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 1 mA
2.5
−
V
mA
ICES
collector leakage current
VCE = 6 V; VBE = 0
−
0.1
hFE
DC current gain
VCE = 5 V; IC = 100 mA
30
150
Cc
collector capacitance
VCB = 6 V; IE = ie = 0; f = 1 MHz
−
8
pF
Cre
feedback capacitance
VCE = 6 V; IC = 0; f = 1 MHz
−
6
pF
1996 Apr 12
3
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (note 1).
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Pulsed, class-AB;
δ = 1 : 8; tp ≤ 5 ms
1800
6
2
2
Gp
(dB)
ηC
(%)
≥6
≥50
typ. 8.5
typ. 65
Note
1. Ts is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT13 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions: δ = 1 : 8; tp ≤ 5 ms; f = 1800 MHz; VCE = 8.5 V; PL = 2 W; Ts ≤ 60 °C.
MGD236
10
handbook, halfpage
Gp
(dB)
Gp
100
ηC
(%)
8
80
6
60
ηC
4
40
2
20
0
0
1
0
2
PL (W)
3
Pulsed, class-AB; δ = 1 : 8; tp ≤ 5 ms; f = 1800 MHz; VCE = 6 V;
ICQ = 2 mA; tuned at PL = 2 W; Ts ≤ 60 °C.
Fig.2
Power gain and collector efficiency as
functions of load power; typical values.
1996 Apr 12
4
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
PACKAGE OUTLINE
4.0
3.8
5.0
4.8
handbook, full pagewidth
S
A
6.2
5.8
0.1 S
0.7
0.3
5
8
0.7
0.6
1.45
1.25
1
4
1.0
0.5
0.25
0.10
pin 1
index
detail A
1.27
0.49
0.36
0.25 M
(8x)
Dimensions in mm.
Fig.3 SOT96-1.
1996 Apr 12
5
1.75
1.35
0.25
0.19
0 to 8
MBC180 - 1
o
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Apr 12
6
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
NOTES
1996 Apr 12
7
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SCDS48
© Philips Electronics N.V. 1996
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Printed in The Netherlands
127061/1200/02/pp8
Document order number:
Date of release: 1996 Apr 12
9397 750 00791