BS828 DMOS Transistors (N-Channel) FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6) .094 (2.4) .016 (0.4) High breakdown voltage High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets Dimensions in inches and (millimeters) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S28 Pin configuration 1 = Gate, 2 = Source, 3 = Drain MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Drain-Source Voltage VDSS 240 V Drain-Gate Voltage VDGS 240 V Gate-Source Voltage (pulsed) VGS ± 20 V Drain Current (continuous) ID 230 mA Power Dissipation at TSB = 50 °C Ptot 0.3101) W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 0.3 A Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 °C VF 0.85 V 1) Device on fiberglass substrate, see layout Inverse Diode 4/98 BS828 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V(BR)DSS 240 250 – V Gate-Body Leakage Current at VGS = 15 V, VDS = 0 IGSS – – 10 nA IDSS IDSX – – – – 1 25 µA µA Gate-Source Threshold Voltage at VGS = VDS, ID = 1 mA VGS(th) – 1.5 2.5 V Drain-Source ON Resistance at VGS = 2.8 V, ID = 100 mA RDS(ON) – 5.5 8 Ω Thermal Resistance Junction to Substrate Backside RthSB – – 3201) K/W Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W Capacitances at VDS = 20 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Ciss Coss Crss – – – 80 20 5 – – – pF pF pF Switching Times at VGS = 10 V, VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time ton toff – – 5 50 – – ns ns Drain Cutoff Current at VDS = 130 V, VGS = 0 at VDS = 70 V, VGS = 0.2 V 1) Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) RATINGS AND CHARACTERISTIC CURVES BS828 RATINGS AND CHARACTERISTIC CURVES BS828 RATINGS AND CHARACTERISTIC CURVES BS828