BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data · · · · · B C S D E Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S07 Weight: 0.008 grams (approx.) Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G G 1.78 2.05 H H 2.65 3.05 J 0.013 0.15 M K J L K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage Characteristic VDSS 200 V Drain-Gate Voltage VDGS 200 V Gate-Source Voltage (pulsed) (Note 2) VGS ±20 V Drain Current (continuous) ID 100 mA Power Dissipation @ TC = 50°C (Note 1) Pd 310 mW Tj, TSTG -55 to +150 °C Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Symbol Value Unit Max Forward Current (continuous) Characteristic IF 0.3 A Forward Voltage Drop (typ) @ VGS = 0, IF = 0.3A, Tj = 25°C VF 0.85 V Notes: 1. Device mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Pulse test: Pulse width = 80µs, duty cycle = 1%. DS11301 Rev. D-3 1 of 3 BS807 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition V(BR)DSS 200 230 — V ID = 100µA, VGS = 0 Gate-Body Leakage Current IGSS — — 10 nA VGS = 15V, VDS = 0 Drain-Source Cutoff Current IDSS IDSX — — 30 1.0 nA µA VDS = 130V, VGS =0 VDS = 70V, VGS = 0.2V Gate-Source Threshold Voltage VGS(th) — 1.8 3.0 V VGS = VDS, ID = 1.0mA Drain-Source ON Resistance rDS(ON) — 18 28 W Thermal Resistance, Junction to Substrate Backside RqJSB — — 320 K/W Note 1 Thermal Resistance, Junction to Ambient Air RqJA — — 400 K/W Note 1 Input Capacitance Output Capacitance Feedback Capacitance Ciss Coss Crss — 58 8.0 1.5 — pF Drain-Source Breakdown Voltage Notes: VGS = 2.8V, ID = 20 mA VDS = 20V,VGS = 0,f = 1.0 MHz 1. Device mounted on ceramic substrate 0.7mm x 2.5cm2 area. 2. Pulse test: Pulse width = 80µs, duty cycle = 1%. DS11301 Rev. D-3 2 of 3 BS807 500 See Note 1 ID(ON), DRAIN ON-CURRENT (mA) Pd, POWER DISSIPATION (mW) 500 400 300 200 100 See Note 2 TA = 25 C 400 VGS = 4V 300 3.5 200 3 100 2.5 0 0 100 2 0 200 0 See Note 2 40 60 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics TSB, SUBSTRATE TEMPERATURE ( C) Fig. 1, Power Derating Curve 500 20 1.0 TA = 25 C VDS = 25V See Note 2 400 0.8 VGS = 4V ID, DRAIN CURRENT (A) ID(ON), DRAIN ON-CURRENT (mA) TA = 25 C 300 3.5 200 3 100 0.6 0.4 0.2 2.5 2 0 0 2 4 6 8 0 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3, Saturation Characteristics See Note 2 300 200 100 0 2 3 4 5 VDS = 25V 400 300 200 100 0 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5, Transconductance vs Gate-Source Voltage DS11301 Rev. D-3 4 See Note 2 400 1 3 500 VDS = 25V 0 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate-Source Voltage gfs, TRANSCONDUCTANCE (mm) gfs, TRANSCONDUCTANCE (mm) 500 1 0 100 200 ID, DRAIN CURRENT (mA) Fig. 6, Transconductance vs Drain Current 3 of 3 BS807