BSL215C OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 · Complementary P + N channel V DS · Enhancement mode R DS(on),max · Super Logic level (2.5V rated) · Avalanche rated ID A · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant PG-TSOP6 6 1 2 5 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL215C PG-TSOP-6 L6327: 3000 pcs / reel sPH Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter 1) Value Symbol Conditions Unit P N T A=25 °C -1.5 1.5 T A=70 °C -1.2 1.2 I D,pulse T A=25 °C -6 6 Avalanche energy, single pulse E AS P: I D=-1.5 A, N: I D=1.5 A, R GS=25 Ω 11 3.7 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Continuous drain current Pulsed drain current ID ESD class Soldering temperature T A=25 °C JESD22-A114-HBM T solder 1) A mJ ±12 V 0.5 W -55 ... 150 °C 0 (<250V) 260 °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.2.1 4 Remark: only one of both transistors active page 1 2009-02-10 BSL215C Parameter Values Symbol Conditions Unit min. typ. max. - - 250 K/W - - -20 V Thermal characteristics Thermal resistance, junction ambient P N R thJA minimal footprint 2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current P V (BR)DSS V GS=0 V, I D=-250 µA N V GS=0 V, I D=250 µA 20 - - P V GS(th) V DS=V GS, I D=-11 µA -1.2 -0.9 -0.6 N V DS=V GS, I D=3.7 µA 0.7 0.95 1.2 P I DSS V DS=-20 V, V GS=0 V, T j=25 °C - - -1 N V DS=20 V, V GS=0 V, T j=25 °C - - 1 P V DS=-20 V, V GS=0 V, T j=150 °C - - -100 N V DS=20 V, V GS=0 V, T j=150 °C - - 100 I GSS V GS=±12 V, V DS=0 V - - ±100 nA P R DS(on) V GS=-2.5V, I D=-1.1 A - 163 280 mΩ N V GS=2.5 V, I D=0.7 A - 173 250 P V GS=-4.5V, I D=-1.5 A - 102 150 N V GS=4.5 V, I D=1.5 A - 108 140 P g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A - 4.5 - N |V DS|>2|I D|R DS(on)max, I D=1.2 A - 4 - P N Drain-source on-state resistance Transconductance µA S 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB Rev.2.1 page 2 2009-02-10 BSL215C Parameter Values Symbol Conditions Unit min. typ. max. - 270 346 - 110 143 - 110 128 - 46 62 P Crss - 94 128 N - 6.1 9 P t d(on) - 6.7 - 4.1 - - 9.7 - - 7.6 - - 14.5 - - 6.8 - P tf - 14.0 - N - 1.4 - P Q gs - -0.49 - - -1.9 - - -3.0 - - -1.9 - - 0.24 - - 0.2 - - 0.73 - - 2.2 - Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance Turn-on delay time V GS=0 V, P: V DS=-10 V, N: V DS= 10 V, f =1 MHz N Rise time P tr N Turn-off delay time P t d(off) N Fall time P: V DD=-10 V, V GS=-4.5V, R G=6 Ω, I D=-1.5 A N: V DD=10 V, V GS=4.5 V, R G=6 Ω, I D=1.5 A pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Gate to source charge N Q gs Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Rev.2.1 V DD=-10 V, I D=-1.5 A, V GS=0 to -5 V V DD=10 V, I D=1.5 A, V GS=0 to 4.5 V page 3 nC 2009-02-10 BSL215C Parameter Values Symbol Conditions Unit min. typ. max. - - -0.5 - - 0.5 - - -6 - - 6 Reverse Diode Diode continuous forward current P IS N Diode pulse current P I S,pulse T C=25 °C N Diode forward voltage Reverse recovery time P V SD V GS=0 V, I F=-1.5 A, T j=25 °C - -0.8 -1.1 N V GS=0 V, I F=1.5 A, T j=25 °C - 0.8 1.1 - 21 - - 8.4 - - -3.7 - - 1.7 - P t rr N Reverse recovery charge P Q rr V R=±10 V, I F=I S, di F/dt =100 A/µs N Rev.2.1 page 4 A V ns nC 2009-02-10 BSL215C 2 Power dissipation (N) P tot=f(T A) P tot=f(T A) 0.6 0.6 0.5 0.5 0.4 0.4 P tot [W] P tot [W] 1 Power dissipation (P) 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0 40 80 120 0 160 40 T A [°C] 4 Drain current (N) I D=f(T A) I D=f(T A) parameter: V GS≤-4.5 V parameter: V GS≥4.5 V 1.6 1.6 1.4 1.4 1.2 1.2 1 1 I D [A] -I D [A] 3 Drain current (P) 0.8 120 160 120 160 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 0 40 80 T A [°C] T A [°C] Rev.2.1 80 T A [°C] page 5 2009-02-10 BSL215C 5 Safe operating area (P) 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 I D=f(V DS); T A=25 °C; D =0 parameter: t p parameter: t p 101 101 1 µs 1 µs 10 µs 10 µs 100 µs 100 µs 100 100 1 ms I D [A] -I D [A] 1 ms 10 ms 10-1 10 ms 10-1 DC DC 10-2 10 10-2 -1 10 0 10 1 10 2 10-1 100 -V DS [V] 101 V DS [V] 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N) Z thJA=f(t p) Z thJA=f(t p) parameter: D =t p/T parameter: D =t p/T 103 103 0.5 0.5 102 Z thJA [K/W] Z thJA [K/W] 102 0.2 0.1 0.05 10 1 0.2 0.1 0.05 10 0.02 1 0.02 0.01 0.01 single pulse single pulse 100 10 100 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t p [s] Rev.2.1 102 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 6 2009-02-10 BSL215C 9 Typ. output characteristics (P) 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 8 8 4.5 V 10 V 3.5 V 4.5 V 3.3 V 7 7 10 V 3V 6 6 3V 2.5 V 5 4 I D [A] I D [A] 5 2.3 V 3 4 3 2 2V 2 1 1.8 V 1 2.5 V 2.3 V 2V 1.8 V 0 0 0 1 2 3 0 1 V DS [V] 2 3 V DS [V] 11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 280 280 2V 2.2 V 2.5 V 240 200 3V 200 2.5 V 160 R DS(on) [mΩ] R DS(on) [mΩ] 2.5 V 240 3V 3.3 V 120 4.5 V 160 3.5 V 120 4.5 V 6V 6V 80 80 40 40 0 0 0 2 4 6 8 I D [A] Rev.2.1 0 2 4 6 8 I D [A] page 7 2009-02-10 BSL215C 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | ID| RDS(on)max I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j parameter: T j 6 6 5 5 4 4 I D [A] -I D [A] 13 Typ. transfer characteristics (P) 3 3 150 °C 2 2 150 °C 1 1 25 °C 25 °C 0 0 0 1 2 0 3 1 2 -V GS [V] 3 V GS [V] 15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=-1.5 A; V GS=-4.5 V R DS(on)=f(T j); I D=1.5 A; V GS=4.5 V 240 240 200 200 98% 160 R DS(on) [mΩ] R DS(on) [mΩ] 160 typ 120 120 80 40 40 0 -60 -20 20 60 100 140 180 T j [°C] Rev.2.1 typ 80 0 98% -60 -20 20 60 100 140 180 T j [°C] page 8 2009-02-10 BSL215C 17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=-11 µA V GS(th)=f(T j); V GS=V DS; I D=3.7 µA 1.6 1.6 1.2 1.2 98% V GS(th) [V] -V GS(th) [V] 98% typ 0.8 typ 0.8 2% 2% 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 19 Typ. capacitances (P) 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 103 103 Ciss Ciss Coss 10 Coss C [pF] C [pF] 102 2 Crss 101 Crss 101 100 0 10 20 -V DS [V] Rev.2.1 0 5 10 15 20 V DS [V] page 9 2009-02-10 BSL215C 21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 101 101 25 °C 100 100 150 °C 25 °C I F [A] -I F [A] 150 °C 10-1 10-1 150 °C, 98% 98%, 150°C 98%, 25 °C 25 °C, 98% 10-2 10-2 0 0.5 1 1.5 2 0 0.4 0.8 -V SD [V] 23 Avalanche characteristics (P) 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 Ω I AS=f(t AV); R GS=25 Ω parameter: T j(start) parameter: T j(start) 1.6 101 I AV [A] -I AV [A] 101 25 °C 100 125 °C 100 °C 10-1 100 125 °C 100 °C 25 °C 10-1 10 0 10 1 10 2 10 3 t AV [µs] Rev.2.1 1.2 V SD [V] 100 101 102 103 t AV [µs] page 10 2009-02-10 BSL215C 25 Typ. gate charge (P) 26 Typ. gate charge (N) V GS=f(Q gate); I D=-1.5 A pulsed V GS=f(Q gate); I D=1.5 A pulsed parameter: V DD parameter: V DD 6 6 -16 V -4 V 5 5 -10 V 10 V 4V 4 V GS [V] -V GS [V] 4 16 V 3 3 2 2 1 1 0 0 0 1 2 3 4 5 0 0.2 0.4 -Q gate [nC] 0.6 0.8 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=-250 µA V BR(DSS)=f(T j); I D=250 µA 25 25 24 24 23 23 22 22 V BR(DSS) [V] -V BR(DSS) [V] 27 Drain-source breakdown voltage (P) 21 20 21 20 19 19 18 18 17 17 16 16 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev.2.1 1 Q gate [nC] page 11 2009-02-10 BSL215CBSL21 TSOP6 Package Outline: 2.9 ±0.2 (2.25) 1.1 MAX. B 0.1 MAX. 1 2 3 0.35 +0.1 -0.05 0.2 M B 6x 0.15 +0.1 -0.06 0.95 0.2 1.9 M 1.6 ±0.1 4 10˚ MAX. 5 0.25 ±0.1 10˚ MAX. 6 2.5 ±0.1 (0.35) A A GPX09300 Footprint: Packaging: 0.5 0.2 2.7 8 2.9 1.9 4 0.95 Remark: Wave soldering possible dep. Pin 1 marking on customers process conditions 3.15 1.15 CPWG5899 HLG09283 Dimensions in mm Rev.2.1 page 12 2009-02-10 BSL215C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.1 page 13 2009-02-10