Preliminary Data BSO 304SN SIPMOS Small-Signal-Transistor Features Product Summary • Single N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 30 V RDS(on) 0.03 Ω ID 6.4 A • Logic Level • dv/dt rated Type Package Ordering Code BSO 304 SN SO 8 Q67000-S4012 Maximum Ratings, at T j = 25 ˚C, unless otherwise specified Parameter Symbol Continuous drain current ID 6.4 IDpulse 25.6 Value Unit A T A = 25 ˚C Pulsed drain current T A = 25 ˚C Avalanche energy, single pulse EAS 90 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 6.4 A EAR 0.2 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 2 W ˚C I D = 6.4 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 6.4 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C T A = 25 ˚C Operating temperature Tj -55 ... +150 Storage temperature Tstg -55 ... +150 IEC climatic category; DIN IEC 68-1 Data Sheet 55/150/56 1 05.99 BSO 304SN Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 35 Thermal resistance @ 10 sec., min. footprint Rth(JA) - - 80 Thermal resistance @ 10 sec., Rth(JA) - - 62.5 K/W 6 cm2 cooling area 1) Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 30 µA Zero gate voltage drain current µA I DSS VDS = 30 V, V GS = 0 V, T j = 25 ˚C - 0.1 1 VDS = 30 V, V GS = 0 V, T j = 150 ˚C - 10 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 4.5 V, I D = 5.5 A - 0.03 0.042 VGS = 10 V, I D = 6.4 A - 0.02 0.03 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 304SN Electrical Characteristics Symbol Parameter Values Unit min. typ. max. gfs 6 13 - S Ciss - 620 775 pF Coss - 270 340 Crss - 130 165 t d(on) - 15 23 tr - 47 70 t d(off) - 16 24 tf - 20 30 Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 5.5 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 15 V, V GS = 4.5 V, ID = 5.5 A, RG = 10 Ω Rise time VDD = 15 V, V GS = 4.5 V, ID = 5.5 A, RG = 10 Ω Turn-off delay time VDD = 15 V, V GS = 4.5 V, ID = 5.5 A, RG = 10 Ω Fall time VDD = 15 V, V GS = 4.5 V, ID = 5.5 A, RG = 10 Ω Data Sheet 3 05.99 BSO 304SN Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. QG(th) - 1 1.5 Gate charge at Vgs=5V VDD = 24 V, ID = 5.5 A, VGS = 0 to 5 V Qg(5) - 15 23 Gate charge total Qg - 23 35 V(plateau) - 2.97 - V IS - - 6.4 A I SM - - 25.6 VSD - 0.9 1.2 V t rr - 50 75 ns Q rr - 43 65 µC at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold nC VDD = 24 V, ID≥0,1 A, VGS = 0 to 1 V nC VDD = 24 V, ID = 5.5 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 5.5 A Reverse Diode Inverse diode continuous forward current TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage VGS = 0 V, I F = 11 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSO 304SN Power dissipation Drain current Ptot= f (TA) ID = f (TA ) BSO 304 SN BSO 304 SN 7.0 2.4 A W 6.0 2.0 5.5 5.0 1.6 4.5 ID Ptot 1.8 1.4 4.0 3.5 1.2 3.0 1.0 2.5 0.8 2.0 0.6 1.5 0.4 1.0 0.2 0.5 0.0 0 20 40 60 80 100 ˚C 120 0.0 0 160 20 40 60 80 100 120 ˚C TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) ZthJA = f(tp ) parameter : D = 0 , TA = 25 ˚C parameter : D= tp/T 10 160 2 BSO 304 SN 10 2 BSO 304 SN /ID A = 10 1 R ( DS V DS tp = 4.4µs K/W ) on 10 µs Z thJA ID 100 µs 1 ms 10 0 10 1 10 ms D = 0.50 0.20 10 0 0.10 single pulse 10 -1 0.02 DC 10 -2 -1 10 10 0 10 1 0.01 V 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 2 VDS Data Sheet 0.05 s 10 4 tp 5 05.99 BSO 304SN Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : I D = 5.5 A, VGS = 4.5 V BSO 304 SN BSO 304 SN 0.11 Ptot = 2W Ω ki ljhg fed c 12 11 ID 10 VGS [V] a 2.5 b 3.0 c 3.5 d 4.0 9 e 4.5 8 f 5.0 g 5.5 7 h 6.0 6 i 6.5 j 7.0 b k 8.0 l 10.0 5 4 0.09 RDS(on) 15 A 0.08 0.07 0.06 98% 0.05 0.04 typ 0.03 3 0.02 2 0.01 1 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 -60 5.0 VDS -20 20 60 100 ˚C 180 Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 C pF 10 3 Ciss Coss 10 2 0 Crss 5 10 15 20 25 V 35 VDS Data Sheet 6 05.99 BSO 304SN Typ. transfer characteristics I D= f (VGS) Gate threshold voltage parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max VGS(th) = f (Tj) parameter : VGS = VDS , ID = 30 µA 3.2 15 A V 12 2.4 VGS(th) 11 ID 10 9 8 2.0 1.6 7 6 1.2 max 0.8 typ 0.4 min 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 -60 5.0 VGS -20 20 60 100 V 160 Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO 304 SN A IF 10 1 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 304SN Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 6.4 A, VDD = 25 V RGS = 25 Ω VGS = f (Q Gate) parameter: ID puls = 5.5 A BSO 304 SN 100 16 mJ V 80 12 VGS EAS 70 60 50 10 8 40 0,2 VDS max 6 0,8 VDS max 30 4 20 2 10 0 20 40 60 80 100 120 Drain-source breakdown voltage ˚C 0 0 160 Tj 4 8 12 16 20 24 28 nC 34 Q Gate V(BR)DSS = f (Tj) BSO 304 SN 37 V V(BR)DSS 35 34 33 32 31 30 29 28 27 0 20 40 60 80 100 120 ˚C 160 Tj Data Sheet 8 05.99