BTA208B-1000C Three-quadrant triacs high commutation Rev. 01 — 5 December 2005 Product data sheet 1. Product profile 1.1 General description Passivated high voltage, high commutation triac in a SOT404 surface mounted device, plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dV/dt as well as high dI/dt can occur. This device will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 1.2 Features ■ False trigger immunity ■ 1000 V, VDRM guaranteed 1.3 Applications ■ Motor control ■ Reversible induction motors 1.4 Quick reference data ■ ITSM ≤ 65 A ■ VDRM ≤ 1000 V ■ IT(RMS) ≤ 8 A ■ IGT ≤ 35 mA 2. Pinning information Table 1: Pinning Pin Description 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base; main terminal 2 Simplified outline mb Symbol T2 T1 G sym051 2 1 3 SOT404 (D2PAK) BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 3. Ordering information Table 2: Ordering information Type number BTA208B-1000C Package Name Description Version D2PAK plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; see Figure 4 and 5 ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms t = 16.7 ms Min Max Unit - 1000 V - 8 A - 65 A - 71 A I2t I2t for fusing t = 10 ms - 21 A2s dlT/dt rate of rise of on-state current ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C over any 20 ms period BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 2 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 003aab162 12 α = 180° Ptot (W) α 10 101 Tmb(max) (°C) 120° 105 90° α 8 109 60° 30° 6 113 4 117 2 121 125 10 0 0 2 4 6 8 I T(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aaa968 80 ITSM IT ITSM (A) t 60 tp Tj = 25 °C max 40 20 0 1 102 10 103 n f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 3 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 003aab121 103 ITSM IT dlT/dt limit t ITSM (A) T Tj(init) = 25 °C max 102 10 10−2 10−1 1 102 10 tp (ms) Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aaa970 25 IT(RMS) 003aab161 10 I T(RMS) (A) (A) 102 °C 20 8 15 6 10 4 5 2 0 10−2 10−1 1 10 surge duration (s) 0 -50 0 50 100T mb (°C) 150 f = 50 Hz; Tmb ≤ 102 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 4 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 mounting base half cycle; see Figure 6 - - 2 K/W - - 2.4 K/W thermal resistance from junction to minimum footprint ambient - 55 - K/W 001aad582 10 Zth(j-mb) (K/W) (1) (2) 1 10−1 10−2 10−5 P tp 10−4 10−3 10−2 10−1 1 t 10 tp (s) (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 5 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit T2+ G+ 2 6 35 mA T2+ G− 2 13 35 mA T2− G− 2 23 35 mA T2+ G+ - 25 50 mA T2+ G− - 48 75 mA Static characteristics gate trigger current IGT latching current IL VD = 12 V; IT = 0.1 A; see Figure 8 [1] VD = 12 V; IGT = 0.1 A; see Figure 10 - 30 50 mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 T2− G− - 20 50 mA VT on-state voltage IT = 10 A; see Figure 9 - 1.3 1.65 V VGT gate trigger voltage off-state current ID VD = 12 V; IT = 0.1 A; see Figure 7 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V VD = VDRM(max); Tj = 125 °C - 0.1 0.5 mA 1000 4000 - V/µs Dynamic characteristics dVD/dt rate of rise of off-state VDM = 67 % VDRM(max); voltage Tj = 125 °C; exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 8 A; without snubber; gate open circuit; see Figure 12 12 32 - A/ms tgt gate-controlled turn-on time ITM = 12 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs - 2 - µs [1] Device will not trigger in the T2− G+ quadrant. BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 6 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 001aab101 1.6 001aac669 3 (1) VGT(Tj) VGT(25°C) IGT (Tj) IGT (25°C) 1.2 2 (2) (3) 0.8 1 0.4 −50 0 50 100 150 0 −50 0 50 100 Tj (°C) 150 Tj (°C) (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature 003aaa971 25 IT (A) Fig 8. Normalized gate trigger current as a function of junction temperature 001aab100 3 IL(Tj) IL(25°C) 20 2 15 10 1 5 (1) (2) (3) 0 0 1 2 VT (V) 3 0 −50 0 50 100 150 Tj (°C) Vo = 1.22 V; Rs = 0.04 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 7 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 001aab099 3 003aaa973 103 dIcom/dt (A/ms) IH(Tj) IH(25°C) 102 2 typ min 1 0 −50 10 1 0 50 100 150 20 Tj (°C) Fig 11. Normalized holding current as a function of junction temperature 100 Tj (°C) 140 Fig 12. Rate of change of commutating current as a function of junction temperature; typical and minimum values BTA208B-1000C_1 Product data sheet 60 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 8 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 7. Package outline SOT404 Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 05-02-11 SOT404 Fig 13. Package outline SOT404 (D2PAK) BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 9 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BTA208B-1000C_1 20051205 Product data sheet - - - BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 10 of 12 BTA208B-1000C Philips Semiconductors Three-quadrant triacs high commutation 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks 11. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BTA208B-1000C_1 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 5 December 2005 11 of 12 Philips Semiconductors BTA208B-1000C Three-quadrant triacs high commutation 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 5 December 2005 Document number: BTA208B-1000C_1 Published in The Netherlands