STMICROELECTRONICS BTB41

BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
Dimensions TO-247AD
Dim.
G
T2
T1
T2
G
T1
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
Parameter
PG(AV)
Tstg
Tj
Unit
RMS on-state current (full sine wave)
TO-247AD
Tc = 80 °C
41
A
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
F = 50 Hz
t = 16.7 ms
t = 20 ms
420
400
A
880
A²s
I²t Value for fusing
Critical rate of rise of on-state current
_ 100 ns
I G = 2 x I GT , tr <
tp = 10 ms
F = 120 Hz
Tj = 125°C
50
A/µs
tp = 10 ms
Tj = 25°C
VDRM/VRRM
V
tp = 20 µs
Tj = 125°C
8
A
Tj = 125°C
1
W
- 40 to + 150
- 40 to + 125
°C
VDSM/V RSM Non repetitive surge peak off-state
voltage
IGM
Value
Peak gate current
Average gate p ower diss ipation
+ 100
Storage junction temperature range
Operating junction temperature range
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
IGT (1)
VGT
VD = 12 V
VGD
VD = VDRM
IH (2)
IT = 500 mA
IL
IG = 1.2 IGT
RL = 33 Ω
RL = 3.3 kΩ
MAX.
50
100
mA
ALL
MAX.
1.3
V
ALL
MIN.
0.2
V
MAX.
80
mA
MAX.
70
mA
Tj = 125°C
I- III-IV
VD = 67 % VDRM gate open Tj = 125°C
(dI/dt)c (2) Without snubber
Unit
I - II - III
IV
II
dV/dt (2)
Value
Tj = 125°C
160
MIN.
MIN.
500
10
V/µs
A/ms
BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
STATIC CHARACTERISTICS
Symbol
Test Conditions
VTM (2)
ITM = 60 A
Vto (2)
tp = 380 µs
Value
Unit
Tj = 25°C
MAX.
1.55
V
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd (2)
Dynamic resistance
Tj = 125°C
MAX.
10
mΩ
IDRM
VDRM = VRRM
Tj = 25°C
5
µA
5
mA
IRRM
Tj = 125°C
MAX.
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
0.6
°C/W
Rth(j-a)
Junction to ambient
50
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Type
Package
50 mA
Standard
TO-247AD
Weight
Base
quantity
Packing
mode
4.5 g
120
Bulk
200 V ~~ 1000 V
BTB/BTA41
X
X
OTHER INFORMATION
Part Number
BTB/BTA41
Marking
BTB/BTA41
BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s ta te current (full cycle).
50
P (W)
40
30
20
180°
α
α
10
IT (R MS ) (A )
0
0
5
10
15
20
25
30
35
40
F ig. 3: R elative variation of thermal impeda nce
versus pulse duration.
1.E +00
F ig. 2: R MS on-state current vers us cas e
temperature (full cycle).
45
40
35
30
25
20
15
10
5
0
IT (R MS ) (A )
B TA 41
T c (° C )
0
25
F ig. 4:
values ).
K =[Zth/R th]
400
Zth(j-c)
α = 180°
B T B 41
50
On-s tate
75
100
cha racteris tics
125
(maximum
IT M (A )
T j max
100
1.E -01
Zth(j-a)
B TA/B T B 41
tp (s )
1.E -03
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03
F ig. 5: S urge peak on-s tate current vers us
number of cycles .
450
400
350
300
250
200
150
100
50
0
T j=25°C
10
1.E -02
IT S M (A )
T j max.:
V to = 0.85 V
R d = 10 mΩ
V T M (V )
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F ig. 6: Non-repetitive s urge pea k on-s tate
current for a s inus oidal puls e with width
tp < 10 ms, and corresponding value of I²t.
10000
IT S M (A ), I² t (A ² s )
IT S M
t=20ms
One cycle
Non repetitive
T j initial=25°C
1000
dI/dt limitation:
50A /µs
I²t
R epetitive
T c=70°C
tp (ms )
Number of cycles
1
10
100
1000
100
0.01
0.10
T j initial=25°C
1.00
10.00
BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)
F ig. 7: R elative varia tion of gate trigger current,
holding current and latching current vers us
junction temperature (typical values).
2.5
IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]
(dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c
2.0
1.8
2.0
1.6
IG T
1.4
1.5
1.0
1.2
IH & IL
1.0
0.8
0.5
0.6
T j(° C )
0.0
-40
-20
0
20
40
60
80
100
120
140
F ig. 9: R elative varia tion of critical rate of
decreas e of main current vers us junction
temperature.
(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]
6
5
4
3
2
1
0
T j (° C )
0
F ig. 8: R ela tive variation of critica l rate of decreas e
of main current vers us (dV /dt)c (typica l values ).
25
50
75
100
125
0.4
0.1
(dV /dt)c (V /µs )
1.0
10.0
100.0