Bulletin I27105 rev. B 02/02 T..RIA SERIES MEDIUM POWER PHASE CONTROL THYRISTORS Power Modules Features Electrically isolated base plate Types up to 1200 V RRM 50 A 70 A 90 A 3500 V RMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Description These series of T-modules are inteded for general purpose applications such as battery chargers, welders and plating equipment, regulated power supplies and temperature and speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. Major Ratings and Characteristics Parameters T50RIA IT(AV) T70RIA T90RIA Units 50 70 90 70 70 70 80 110 141 A ITSM @ 50Hz 1310 1660 1780 A @ 60Hz 1370 1740 1870 A @ 50Hz 8550 13860 15900 A2s @ 60Hz 7800 12650 14500 A2s 85500 138500 159100 A2√s @ TC IT(RMS) It 2 I2√t VDRM/VRRM TJ www.irf.com 100 to 1200 -40 to 125 A o C V o C 1 T..RIA Series Bulletin I27105 rev. B 02/02 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VDRM/VRRM, maximum repetitive VRSM, maximum non-repetitive Code peak reverse voltage peak reverse voltage V V 10 100 20 200 300 T50RIA 40 400 500 T70RIA 60 600 700 T90RIA 80 800 900 100 120 1000 1200 1100 1300 IDRM/IRRM max. @ 25°C µA 150 100 On-state Conduction T50RIA T70RIA T90RIA IT(AV) Max. average on-state current Parameter 50 70 90 A @ Case temperature 70 70 70 °C IT(RMS) Max. RMS on-state current 80 110 141 A Maximum peak, one-cycle 1310 1660 1780 A on-state, non-repetitive 1370 1740 1870 t = 8.3ms reapplied surge current 1100 1400 1500 t = 10ms 1150 1460 1570 t = 8.3ms reapplied 8550 13860 15900 7800 12650 14500 t = 8.3ms reapplied 6050 9800 11250 t = 10ms 5520 8950 10270 t = 8.3ms reapplied 85500 138500 159100 A2√s 0.97 0.77 0.78 V 1.13 0.88 0.88 4.1 3.6 2.9 3.3 3.2 2.6 1.60 1.55 1.55 ITSM I2t I2√t Maximum I2t for fusing Maximum I2√t for fusing VT(TO)1 Low level value of threshold Units Conditions A2s 180° conduction, half sine wave t = 10ms t = 10ms No voltage 100% VRRM No voltage Sine half wave, Initial TJ = TJ max. 100% VRRM t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. voltage VT(TO)2 High level value of threshold (I > π x IT(AV)), @ TJ max. voltage rt1 Low level value on-state mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max. slope resistance rt2 High level value on-state (I > π x IT(AV)), @ TJ max. slope resistance VTM Maximum on-state voltage drop V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2 IH Maximum holding current 200 mA Anode supply = 6V initial IT = 30A, TJ = 25°C IL Maximum latching current 400 mA Anode supply = 6V resistive load = 10Ω gate pulse: 10V, 100µs, TJ = 25°C Switching Parameter tgd Typical turn-on time T50RIA T70RIA 0.9 T90RIA Units Conditions µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A Ig = 500mA, tr <= 0.5, tp >= 6µs trr Typical reverse recovery time 3.0 µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs tq Typical turn-off time 110 µs TJ = TJ max., ITM = 50A, tp = 300µs, -di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM 2 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Blocking Parameter T50RIA IRRM Maximum peak reverse and IDRM off-state leakage current VINS dv/dt T70RIA T90RIA Units Conditions 15 mA RMS isolation voltage 3500 V Critical rate of rise of off-state voltage 500 V/µs TJ = TJ = TJ max. 50Hz, circuit to base, all terminals shorted, TJ = 25°C, t = 1s TJ = TJ max., linear to 80% rated VDRM (1) (1) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. T90RIA80S90 Triggering Parameter PGM T50RIA Max. peak gate power PG(AV) Max. average gate power T70RIA T90RIA Units Conditions 10 12 12 W tp ≤ 5ms, TJ = TJ max. 2.5 3.0 3.0 W f=50Hz, TJ = TJ max. tp ≤ 5ms, TJ = TJ max. IGM Max. peak gate current 2.5 3.0 3.0 A -VGT Max. peak negative 10 10 10 V Max. required DC gate 4.0 4.0 4.0 V TJ = - 40°C Anode supply = 6V, resistive voltage to trigger 2.5 2.5 2.5 TJ = 25°C load; Ra = 1Ω 1.5 1.5 1.5 TJ = TJ max. Max. required DC gate 250 270 270 current to trigger 100 120 120 50 60 60 0.2 0.2 0.2 V 5.0 6.0 6.0 mA gate voltage VGT IGT VGD IGD di/dt Max. gate voltage that will not trigger Max. gate current that will not trigger Max. rate of rise of turned-on current 200 180 mA TJ = - 40°C Anode supply = 6V, resistive TJ = 25°C load; Ra = 1Ω TJ = TJ max. A/µs @ TJ = TJ max., rated VDRM applied VD = 0.67 rated VDRM, ITM = 2 x rated di/dt Ig = 400mA for T50RIA and Ig = 500mA for 160 T70RIA & T90RIA; tr < 0.5µs, tp >= 6µs 150 For repetitive value use 40% non-repetitive Per JEDEC std. RS397,5.2.2.6 Thermal and Mechanical Specifications Parameter TJ T50RIA Max. junction operating T70RIA T90RIA Units Conditions -40 to 125 °C -40 to 150 °C temperature range Tstg Max. storage temperature range RthJC Max. thermal resistance, 0.65 0.50 0.38 K/W DC operation, per junction 0.2 K/W Mounting surface smooth, flat and greased 1.3 ± 10% Nm junction to case RthCS Max. thermal resistance, case to heatsink T wt Mounting to heatsink torque ± 10% terminals Approximate weight Case style 3 ± 10% 54 D-56 M3.5 mounting screws (2) non lubricated threads M5 screw terminals g See outline table T type (2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. www.irf.com 3 T..RIA Series Bulletin I27105 rev. B 02/02 ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) Devices Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max. 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o T50RIA 0.08 0.10 0.13 0.19 0.31 0.06 0.10 0.14 0.20 0.32 T70RIA 0.07 0.08 0.10 0.14 0.24 0.05 0.08 0.11 0.15 0.24 T90RIA 0.05 0.06 0.08 0.12 0.20 0.04 0.06 0.09 0.12 0.20 Units K/W Ordering Information Table Circuit configuration ** Device Code T 50 RIA 120 1 2 3 4 G 1 - Module type 2 - Current rating 3 - Circuit configuration ** 4 - Voltage code : code x 10 = VRRM Outline Table + - All dimensions in millimeters (inches) 4 www.irf.com T..RIA Series 13 0 T 50R IA.. S eries R thJC (DC) = 0.65 K /W 12 0 11 0 10 0 Conduction Angle 90 80 30 70 60 90 1 20 60 1 80 50 0 10 20 30 40 130 Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) Bulletin I27105 rev. B 02/02 50 T 50R IA.. S eries R thJC (DC) = 0.65 K /W 120 110 100 Conduction P eriod 90 80 70 90 60 60 120 30 180 DC 50 0 60 10 20 30 40 50 60 70 Average On-s tate Current (A) Fig. 2 - Current Ratings Characteristics 80 th S A K /W K/ W R 7 K /W =0 K/ W .1 K /W 60 1 0 .3 0. 180 120 90 60 30 70 0 .5 1 .5 2K 40 3K 30 Conduction Angle 10 /W /W 5 K /W 20 T 50R IA.. S eries T J = 125 C K /W R R MS L imit a el t 50 -D Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) Fig. 1 - Current Ratings Characteristics 80 10 K /W 0 0 10 20 30 40 50 0 Average On-s tate Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient T emperature ( C) 11 0 5 K .1 /W -D a el t 1K /W R 60 K/ W K/ W =0 70 0. 0 .7 /W 80 A thS 90 R DC 1 80 1 20 90 60 30 10 0 3K 0. Maximum Average On-s tate P ower L os s (W) Fig. 3 - On-state Power Loss Characteristics 1.5 50 R MS L imit 40 K /W 2K /W 3 K /W Conduction P eriod 30 20 5 K /W T 5 0R IA.. S eries T J = 125 C 10 0 0 10 20 30 40 50 60 Average On-s tate Current (A) 70 80 0 20 40 60 80 100 120 Max imum Allowable Ambient T emperature ( C) Fig. 4 - On-state Power Loss Characteristics www.irf.com 5 T..RIA Series Bulletin I27105 rev. B 02/02 1300 At Any R ated L oad Condition And W ith R ated V R R M Applied F ollowing S urge. Initial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s 1100 1000 P eak Half S ine Wave On-s tate Current (A) P eak Half S ine Wave On-s tate Current (A) 1200 900 800 700 600 T 50R I A.. S eries 500 1 10 Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated V R R MR eapplied 1200 1100 1000 900 800 700 600 T 50R IA.. S eries 500 0.01 100 0.1 1 Number Of E qual Amplitude H alf Cycle Current P uls es (N) P uls e T rain Duration (s ) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Ins tantaneous On-s tate Current (A) 1000 100 T J = 25 C 10 T J = 125 C T 50R IA.. S eries 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Ins tantaneous On-s tate Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics R ectangular gate puls e a) R ecommended load line for rated di/dt : 20V, 30ohms ; tr=0.5 s , tp>=6 s b) R ecommended load line for <=30% rated di/dt : 20V, 65ohms 10 tr=1 s , tp>=6 s (b) (1) P GM = 10W, tp = 5 ms (2) P GM = 20W, tp = 2 ms (3) P GM = 50W, tp = 1 ms (4) P GM = 100W, tp = 500 s (a) T j=-40 C T j=125 C 1 T j=25 C Ins tantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.00 1 0.0 1 T 50 R IA.. S eries 0.1 1 F requency L imited by P G(AV) 10 100 1000 Ins tantaneous Gate Current (A) Fig. 9 - Gate Characteristics 6 www.irf.com T..RIA Series 130 T 70R IA.. S eries R thJC (DC) = 0.50 K /W 120 110 100 Conduction Angle 90 80 30 70 60 90 60 120 180 50 0 10 20 30 40 50 60 70 130 Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) Bulletin I27105 rev. B 02/02 T 70R IA.. S eries R thJC (DC) = 0.50 K /W 120 110 100 Conduction P eriod 90 80 60 70 30 120 180 DC 80 100 50 0 80 20 40 60 120 Average On-s tate Current (A) Average On-s tate Current (A) Fig. 12 - Current Ratings Characteristics Fig. 13 - Current Ratings Characteristics 100 180 120 90 60 30 -D el ta /W 3K /W R K /W 5 K /W T 70R IA.. S eries T J = 125 C 10 /W 20 K .1 Conduction Angle /W 2K 40 30 =0 1 .5 50 K/ W A 60 th S 1K R MS L imit 0. 5 K/ W R 70 0 .7 /W 80 3K 90 0. Maximum Average On-s tate P ower L os s (W) 90 60 7 K /W 0 0 10 20 30 40 50 0 70 60 Average On-s tate Current (A) 20 40 60 80 100 12 0 Maximum Allowable Ambient T emperature ( C) 140 DC 180 120 90 60 30 T 70R IA.. S eries T J = 125 C 20 K/ W R 40 2K ta el Conduction P eriod -D 1 .5 W K/ 60 1 1K R MS L imit 0. K/ W 0 .7 80 K/ W = 3 0 .5 A 100 0. thS 120 R Maximum Average On-s tate P ower L os s (W) Fig. 18 - On-state Power Loss Characteristics /W K /W /W 3 K /W 5 K /W 0 0 20 40 60 80 100 Average On-s tate Current (A) 0 120 20 40 60 80 100 120 Max imum Allowable Ambient T emperature ( C) Fig. 15 - On-state Power Loss Characteristics www.irf.com 7 T..RIA Series Bulletin I27105 rev. B 02/02 170 0 At Any R ated L oad Condition And W ith R ated VR R M Applied F ollowing S urge. Initial T J = 125 C @ 6 0 H z 0.0083 s @ 5 0 H z 0.0100 s 1400 1300 P eak H alf S ine Wave On-s tate Current (A) P eak H alf S ine Wave On-s tate Current (A) 1500 1200 1100 1000 900 T 70R IA.. S eries 800 700 1 10 100 Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated V R R MR eapplied 160 0 150 0 140 0 130 0 120 0 110 0 100 0 900 800 700 T 70R IA.. S eries 600 0.01 0.1 Number Of E qual Amplitude H alf Cycle Current P uls es (N) 1 P uls e T rain Duration (s ) Fig. 16 - Maximum Non-Repetitive Surge Current Fig. 17 - Maximum Non-Repetitive Surge Current Ins tantaneous On-s tate Current (A) 1000 100 T J = 25 C 10 T J = 125 C T 70R IA.. S eries 1 0 0.5 1 1.5 2 2.5 3 3.5 4 Ins tantaneous On-s tate Voltage (V) Fig. 10 - On-state Voltage Drop Characteristics R ectangular gate puls e a) R ecommended load line for rated di/dt : 20V, 20ohms ; tr=0.5 s , tp>=6 s b) R ecommended load line for <=30 % rated di/dt : 15V, 40ohms 10 tr=1 s , tp>=6 s (b) 1 (1) P GM = 12W, tp = 5ms (2) P GM = 30W, tp = 2ms (3) P GM = 60W, tp = 1ms (4) P GM = 200W, tp = 300 s (a) T j=-40 C T j=125 C T j=2 5 C Ins tantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD 0.1 0.0 01 IGD 0.01 T 70R IA.., T 90R IA.. S eries F requency L imited by P G(AV) 0.1 1 10 100 1000 Ins tantaneous Gate Current (A) Fig. 19 - Gate Characteristics 8 www.irf.com T..RIA Series 13 0 T 90R IA.. S eries R thJC (DC) = 0.38 K /W 12 0 11 0 10 0 Conduction Angle 90 80 30 70 60 90 60 1 20 1 80 50 0 20 40 60 80 130 Maximum Allowable Cas e T emperature ( C) Maximum Allowable Cas e T emperature ( C) Bulletin I27105 rev. B 02/02 T 90R IA.. S eries R thJC (DC) = 0.38 K /W 120 110 100 Conduction P eriod 90 80 70 90 60 60 120 30 180 DC 50 0 1 00 20 40 60 80 100 120 140 160 Average On-s tate Current (A) Fig. 23 - Current Ratings Characteristics Fig. 24 - Current Ratings Characteristics 140 K/ W /W 1K 0. /W -D 0 .7 K /W ta el R MS L imit 1K /W 1 .5 60 40 Conduction Angle 20 T 90R IA S eries T J = 12 5 C R 80 5K = 100 0. 3 0. A 180 120 90 60 30 120 S R th Maximum Average On-s tate P ower L os s (W) Average On-s tate Current (A) K /W 2 K /W 3 K /W 0 0 10 20 30 40 50 60 70 80 Average On-s tate Current (A) 0 90 20 40 60 80 100 120 Maximum Allowable Ambient T emperature ( C) 180 DC 1 80 1 20 90 60 30 = 0. K /W R 0. 7 ta el 100 /W -D 0. 5 3K W K/ 0. 1 120 A 140 th S 160 R Maximum Average On-s tate P ower L os s (W) Fig. 29 - On-state Power Loss Characteristics K /W 1K /W 80 R MS L imit 1 .5 60 Conduction Period 40 T 90R IA.. S eries T J = 125 C 20 K /W 2 K/ W 0 0 20 40 60 80 100 120 140 160 0 Average On-s tate Current (A) 20 40 60 80 100 120 Maximum Allowable Ambient T emperature ( C) Fig. 29 - On-state Power Loss Characteristics www.irf.com 9 T..RIA Series Bulletin I27105 rev. B 02/02 1800 At Any R ated L oad Condition And With R ated V R R M Applied F ollowing S urge. Initial T J = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1500 1400 P eak Half S ine Wave On-s tate Current (A) P eak Half S ine Wave On-s tate Current (A) 1600 1300 1200 1100 1000 900 T 90R IA.. S eries 800 700 1 10 Maximum Non R epetitive S urge Current Vers us P uls e T rain Duration. Control Of Conduction May Not B e Maintained. Initial T J = 125 C No Voltage R eapplied R ated VR R M R eapplied 1700 1600 1500 1400 1300 1200 1100 1000 900 800 T 90R IA.. S eries 700 0.01 100 0.1 Number Of E qual Amplitude H alf Cycle Current P uls es (N) 1 P uls e T rain Duration (s ) Fig. 27 - Maximum Non-Repetitive Surge Current Fig. 28 - Maximum Non-Repetitive Surge Current Ins tantaneous On-s tate Current (A) 1000 100 T J = 25 C T J = 125 C 10 T 90R IA.. S eries 1 0 0.5 1 1.5 2 2.5 3 3.5 Ins tantaneous On-s tate Voltage (V) T rans ient T hermal Impedance Z thJC (K /W ) Fig. 21 - On-state Voltage Drop Characteristics 1 S teady S tate Value R thJC = 0.65 K /W R thJC = 0.50 K /W T 5 0R IA.. S eries R thJC = 0.38 K /W (DC Operation) T 70R IA.. S eries 0.1 0.01 0.0 01 T 90R IA.. S eries 0.01 0.1 1 10 10 0 S quare Wave P uls e Duration (s ) Fig. 34 - Thermal Impedance Z thJC Characteristics 10 www.irf.com T..RIA Series Bulletin I27105 rev. B 02/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 www.irf.com 11