BU810 ® MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ GENERAL PURPOSE SWITCHING 3 ■ 1 2 TO-220 DESCRIPTION The BU810 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM R = 200 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 600 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 7 A 10 A 2 A IC I CM IB P tot T stg Tj Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 o C Storage Temperature Junction Temperature December 2000 75 W -65 to 150 o C 150 o C 1/4 BU810 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.66 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off Current (V BE = 0) V CE = 600 V 200 µA I CEO Collector Cut-off Current (I B = 0) V CE = 400 V 1 mA I EBO ∗ Emitter Cut-off Current (I C = 0) V EB = 5 V 150 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 0.1 A 400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IC = 4 A IC = 7 A I B = 20 mA I B = 200 mA I B = 0.7 A 2 2.5 3 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IC = 4 A I B = 20 mA I B = 200 mA 2.2 3 V V 3 V Max. Unit 0.6 1.5 0.5 µs µs µs Max. Unit VF Diode Forward Voltage I F = 7 A RESISTIVE SWITCHING TIMES Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V Clamp = 250V V BE(off) = -5 V I C = 2A Min. Typ. I B1 = 20mA INDUCTIVE SWITCHING TIMES Symbol Parameter Test Conditions Typ. ts tf Storage Time Fall Time V Clamp = 250V V BE(off) = -5 V I C = 2A I B1 = 20mA L = 500µH 1.5 0.4 µs µs ts tf Storage Time Fall Time V Clamp = 250V V BE(off) = -5 V I C = 7A I B1 = 0.7A L = 500µH 1.5 0.4 µs µs * Pulsed : Pulse duration = 300 µs, duty cycle = 2% 2/4 Min. BU810 TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BU810 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4