DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV97 series Fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of February 1994 1996 Jun 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability 2/3 page k(Datasheet) • Available in ammo-pack. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS MIN. MAX. UNIT repetitive peak reverse voltage BYV97F − 1200 V BYV97G − 1400 V continuous reverse voltage BYV97F − 1200 V BYV97G − 1400 V IF(AV) average forward current Ttp = 60 °C; lead length = 10 mm see Fig.2; averaged over any 20 ms period; see also Fig.6 − 1.6 A IF(AV) average forward current Tamb = 50 °C; PCB mounting (see Fig. 12); see Fig.3; averaged over any 20 ms period; see also Fig.6 − 0.9 A IFRM repetitive peak forward current Ttp = 65 °C; see Fig.4 − 15 A Tamb = 65 °C; see Fig.5 − 8 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax − 20 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off − 10 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 07 see Fig.7 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage V(BR)R reverse avalanche breakdown voltage CONDITIONS TYP. IF = 3 A; Tj = Tj max; see Fig.8 IF = 3 A; see Fig.8 MAX. UNIT 1.35 V − − 1.65 V 1300 − − V − IR = 0.1 mA BYV97F 1500 − VR = VRRMmax; see Fig.9 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.9 − − 150 µA BYV97G IR MIN. reverse current V trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.14 − − 500 ns Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.11 − 35 − pF maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Figs 10 and 13 − − dI R -------dt 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm Rth j-a thermal resistance from junction to ambient note 1 VALUE UNIT 46 K/W 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 12. For more information please refer to the “General Part of associated Handbook”. 1996 Jun 07 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series GRAPHICAL DATA MBD419 2.0 MBD420 1.2 handbook, halfpage handbook, halfpage I F(AV) (A) 1.6 I F(AV) (A) lead length 10 mm 0.8 1.2 0.8 0.4 0.4 0 0 0 100 200 o Ttp ( C) 0 100 a = 1.57; VR = VRRMmax; δ = 0.5. a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.12. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). T amb ( oC) 200 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). MBD448 16 δ = 0.05 I FRM (A) 12 0.1 8 0.2 4 0.5 1 0 10 2 10 1 1 10 10 2 10 3 t p (ms) 10 4 Ttp = 65°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 07 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series MBD442 10 I FRM (A) 8 δ = 0.05 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 2 10 10 3 10 4 t p (ms) Tamb = 65 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD428 3 handbook, halfpage a=3 P (W) MBD433 200 handbook, halfpage 2.5 2 1.57 1.42 Tj ( oC) 2 100 1 BYV97F 0 0 1 I F(AV) (A) 0 2 0 1000 BYV97G VR (V) 2000 a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.6 Solid line = VR. Dotted line = VRRM; δ = 0.5. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 1996 Jun 07 Fig.7 5 Maximum permissible junction temperature as a function of reverse voltage. Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series MGD316 MGC574 3 10halfpage handbook, 10 IF (A) handbook, halfpage IR (µA) 8 10 2 6 10 4 1 2 10 1 0 0 1 2 VF (V) 3 0 100 Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Fig.9 Forward current as a function of forward voltage; maximum values. o Tj ( C) 200 Reverse current as a function of junction temperature; maximum values. MBD439 10 handbook, full pagewidth t rr (µs) IF = 5A 1 1A 10 1 10 1 1 10 dl F /dt (A/µs) Tj = 25°C. For definitions see Fig. 13. Fig.10 Maximum reverse recovery time as a function of the rate of fall of forward current. 1996 Jun 07 6 10 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYV97 series MGD317 102 handbook, halfpage 50 handbook, halfpage 25 Cd (pF) 7 50 10 2 3 1 1 102 10 103 MGA200 VR (V) f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.11 Diode capacitance as a function of reverse voltage; typical values. Fig.12 Device mounted on a printed-circuit board. IF halfpage andbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Jun 07 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers DUT handbook, full pagewidth BYV97 series IF (A) + 10 Ω 0.5 25 V t rr 1Ω 50 Ω 0 t 0.25 0.5 IR (A) 1 Input impedance oscilloscope: 1 MΩ, 22 pF; tr < 7 ns. Source impedance: 50 Ω; tr < 15 ns. Fig.14 Test circuit and reverse recovery time waveform and definition. 1996 Jun 07 8 MAM057 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers PACKAGE OUTLINE handbook, full pagewidth k 3.81 max 28 min Dimensions in mm. The marking band indicates the cathode. , 4.57 max BYV97 series a 28 min 0.81 max MBC880 Fig.15 SOD57. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 07 9