MARKTECH C450TR5270M-0305-3

TR5270M™ LEDs
CxxxTR5270M-Sxx000 (175-μm)
CxxxTR5270M-Sxx000-3 (250-μm)
Data Sheet
Cree’s TR5270M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the
TV-backlighting and general-illumination markets. The TR5270M LEDs are among the brightest in the top-view market
while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The TR5270M is available
in two chip thicknesses: 175 μm and 250 μm. The 250-μm-thick version offers 5% improvement brightness over the
175-μm version due the increased bevel area. The metal backside allows for eutectic die attach and enables superior
performance from improved thermal management. The design is optimally suited for industry-standard top-view
packages.
FEATURES
APPLICATIONS
•
•
•
Rectangular LED RF Performance
–
450 nm – 200 mW min
–
460 nm – 180 mW min
Large LCD Backlighting
–
High Reliability - Eutectic, Solder Paste or
Television
•
General Illumination
•
Medium LCD Backlighting
Preforms Attach
–
Portable PCs
•
Low Forward Voltage – 3.2 V Typical at 120 mA
–
Monitors
•
Maximum DC Forward Current - 250 mA
•
LED Video Displays
•
Class 2 ESD Rating
•
White LEDs
•
InGaN Junction on Thermally Conductive SiC
Substrate
CxxxTR5270M-Sxx000 (175-µm) Chip Diagram
.CPR3EW Rev
Data Sheet:
Top View
Die Cross Section
Bottom View
TR5270M LED
520 x 700 μm
Cathode (-)
98-μm diameter
Bottom Surface
335 x 515 μm
Anode (+)
90-μm diameter
Metal Back-Side
302 x 482 µm
t = 175 μm
Subject to change without notice.
www.cree.com
1
CxxxTR5270M-Sxx000-3 (250-µm) Chip Diagram
Top View
Die Cross Section
Bottom View
TR5270M LED
520 x 700 μm
Cathode (-)
98-μm diameter
Bottom Surface
240 x 420 μm
Anode (+)
90-μm diameter
Metal Back-Side
213 x 392 µm
t = 250 μm
Mechanical Specifications
Description
CxxxTR5270M-Sxx000 (175-µm)
Dimension
Tolerance
P-N Junction Area (μm)
446 x 643
±35
Chip Area (μm)
520 x 700
±35
175
±15
Au Bond Pad Diameter Anode (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
Au Bond Pad Diameter Cathode (μm)
98
±10
Chip Thickness (μm)
Bottom Area (μm)
335 x 515
±45
Bottom Contact Metal (μm)
302 x 482
±25
3.0
±1.0
Bottom Contact Metal Thickness (μm)
Mechanical Specifications
Description
CxxxTR5270M-Sxx000-3 (250-µm)
Dimension
Tolerance
P-N Junction Area (μm)
446 x 643
±35
Chip Area (μm)
520 x 700
±35
250
±15
Au Bond Pad Diameter Anode (μm)
90
±10
Au Bond Pad Thicknesses (μm)
1.0
±0.5
Au Bond Pad Diameter Cathode (μm)
98
±10
Bottom Area (μm)
240 x 420
±45
Bottom Contact Metal (μm)
213 x 392
±25
3.0
±1.0
Chip Thickness (μm)
Bottom Contact Metal Thickness (μm)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc.
2
CPR3EW Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1, 3 & 4
CxxxTR5270M-Sxx00 and CxxxTR5270M-Sxx00-3
DC Forward Current
250 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
300 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA
Part Number
Forward Voltage (Vf, V)
C450TR5270M-Sxx000
C450TR5270M-Sxx000-3
C460TR5270M-Sxx000-3
Notes:
1.
2.
3.
4.
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
2.7
3.2
3.5
2
20
2
21
2
20
2
21
Max If (mA)
2.7
3.2
Max Vf @Max If (V)
2.7
3.2
Max Tj (Deg C)
2.7
3.2
Max Power (W)
C460TR5270M-Sxx000
Note 3
250
3.5
3.5
3.5
150
3.5
0.875
Thermal Resistance (C/W)
10
20
30
Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB) packages for
characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations.
(j-A) =
If @ must
Tambnot exceed 325°C (< Rth
Tamb
Tamb
Assembly processing temperature
5 seconds).
Product resistance to electrostatic250
discharge (ESD) according to the
ESD using a rapid
25HBM is measured by simulating
25
25 avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown.
250
141.25
132.5
123.75
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 120
0
150at higher currents. Typical
150 values given are 150
mA within the maximum ratings shown
above. Efficiency decreases
within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
Maximum Forward Current (mA)
300
250
200
150
Rth j-a = 10
Rth j-a = 20
Rth j-a = 30
Rth j-a = 40
100
50
C/W
C/W
C/W
C/W
0
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc.
3
CPR3EW Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxTR5270M-Sxx00
Radiant Flux (mW)
Radiant Flux (mW)
Radiant Flux (mW)
Radiant Flux (mW)
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR5270M-Sxxxxx or CxxxTR5270M-Sxxxxx-3 ) orders may be filled with any or all bins
(CxxxTR5270M-xxxx or CXXXTR5270M-xxxx-3) contained in the kit. All radiant flux and dominant wavelength values
shown and specified are at If = 120 mA.
C450TR5270M-S20000 (175-µm thick)
C450TR5270M-0209
C450TR5270M-0210
C450TR5270M-0211
C450TR5270M-0212
C450TR5270M-0205
C450TR5270M-0206
C450TR5270M-0207
C450TR5270M-0208
220
200
445
447.5
450
Dominant Wavelength (nm)
452.5
455
C460TR5270M-S18000 (175-µm thick)
C460TR5270M-0205
C460TR5270M-0206
C460TR5270M-0207
C460TR5270M-0208
C460TR5270M-0201
C460TR5270M-0202
C460TR5270M-0203
C460TR5270M-0204
200
180
455
457.5
460
462.5
465
Dominant Wavelength (nm)
C450TR5270M-S21000-3 (250-µm thick)
C450TR5270M-0309-3
C450TR5270M-0310-3
C450TR5270M-0311-3
C450TR5270M-0312-3
C450TR5270M-0305-3
C450TR5270M-0306-3
C450TR5270M-0307-3
C450TR5270M-0308-3
230
210
445
447.5
450
452.5
455
Dominant Wavelength (nm)
C460TR5270M-S19000-3 (250-µm thick)
C460TR5270M-0305-3
C460TR5270M-0306-3
C460TR5270M-0307-3
C460TR5270M-0308-3
C460TR5270M-0301-3
C460TR5270M-0302-3
C460TR5270M-0303-3
C460TR5270M-0304-3
210
190
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc.
4
CPR3EW Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light
Characteristic Curves
100%
50%
0%
0
50
100
150
200
250
If (mA)
These are representative measurements for the TR5270M LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Forward Current
Wavelength
Shift vs
vs Forward
Forward Voltage
Current
Forward Current vs Forward Voltage
250
3
Dominant Wavelength
If (mA) Shift (nm)
250
If (mA)
200
150
100
50
0
0
1
2
3
4
5
200
2
1
150
0
100
-1
50
-2
0
-3
0
0
1
50
2
100
Dominant Wavelength Shift vs Junction
Temperature
RelativeShift
Intensity
vs Forward
Current
Voltage
vs Junction
Temperature
6
200%
5
0.000
0.000
4
-0.050
-0.050
150%
3
-0.100
-0.100
2
-0.150
1
100%
-0.200
0
-0.250
0%
-0.400
5
250
-0.150
-0.200
-0.250
-0.350
25
50
0
25
50
50
75
100
Junction Temperature (°C)
100
75
150
100
125
150
200
125
250
150
-0.400
25
50
Relative Light Intensity vs Junction Temperature
Wavelength Shift vs Forward Current
Dominant Wavelength Shift (nm)
100%
3
95%
2
90%
1
85%
0
80%
-1
75%
-2
70%
-3 25
50
0
50
75
100
100Temperature
150 (°C)
Junction
125
150
200
250
75
100
125
150
Junction Temperature (°C)
If (mA)
Junction Temperature
(°C)
Dominant
Wavelength
Shift (nm)
Relative
Light Intensity
4
200
-0.300
-1
50%
-0.300
-2
-0.350
3
150
Voltage Shift vs Junction Temperature
Voltage Shift (V)
Relative
Light
Intensity
Voltage
Shift
(V) Shift (nm)
Dominant
Wavelength
Vf (V)
Vf (V)
If (mA)
Dominant Wavelength Shift vs Junction
Temperature
6
5
4
3
2
1
0
-1
-2
25
50
75
100
125
150
Junction Temperature (°C)
If (mA)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc.
5
CPR3EW Rev. -
Relative Light Intensity vs
100%
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Junction Temperature
Radiation Pattern
Far
Fields – TR520
This is a representative radiation pattern for the TR5270M LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010, Cree, Inc. (Confidential)
pg. 3
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5270M are trademarks of Cree, Inc.
6
CPR3EW Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com