CENTRAL CMLM0305T

CMLM0305T
Multi Discrete Module ™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0305T is a
Multi Discrete Module™ consisting of a single
N-Channel Enhancement-mode MOSFET and a
Low VF Schottky diode packaged in a space saving
PICOmini™ SOT-563 surface mount case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
MARKING CODE: C35
SOT-563 CASE
* Device is Halogen Free by design
FEATURES:
• DC / DC Converters
• Battery Powered Portable Equipment
• ESD protection up to 2kV
• Low rDS(on) Transistor (1.5Ω MAX @ VGS=5.0V)
• Low VF Schottky Diode (0.47V MAX @ 0.5A)
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
PD
PD
TJ, Tstg
ΘJA
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
SYMBOL
VDS
VDG
VGS
ID
IDM
50
50
12
280
1.5
UNITS
V
V
V
mA
A
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR
VGS=5.0V
50
IGSSF, IGSSR
VGS=10V
0.5
IGSSF, IGSSR
VGS=12V
1.0
IDSS
VDS=50V, VGS=0
50
50
BVDSS
VGS=0, ID=10μA
VGS(th)
VDS=VGS, ID=250μA
0.75
1.2
UNITS
nA
μA
μA
nA
V
V
APPLICATIONS:
Notes:
(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R2 (18-January 2010)
CMLM0305T
Multi Discrete Module ™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
ELECTRICAL CHARACTERISTICS - Q1 - Continued:
SYMBOL
TEST CONDITIONS
MIN
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=1.8V, ID=50mA
rDS(ON)
VGS=2.5V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA
gFS
VDS=10V, ID=200mA
200
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
ELECTRICAL CHARACTERISTICS - D1: (TA=25°C)
IR
VR=10V
IR
VR=30V
BVR
IR=500μA
VF
IF=100μA
VF
IF=1.0mA
VF
IF=10mA
VF
IF=100mA
VF
IF=500mA
CT
VR=1.0V, f=1.0MHz
TYP
1.6
1.3
1.1
MAX
1.4
2.3
1.9
1.5
UNITS
V
Ω
Ω
Ω
mS
pF
pF
pF
5.0
50
25
20
100
μA
μA
V
V
V
V
V
V
pF
40
0.13
0.21
0.27
0.35
0.47
50
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Cathode D1
4) Anode D1
5) Anode D1
6) Drain Q1
MARKING CODE: C35
R2 (18-January 2010)
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