CTLM8110-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER TLM832D CASE • Device is Halogen Free by design APPLICATIONS • • • • Load Power Switches DC - DC Converters LCD Backlighting Battery powered portable devices including Cell Phones, Digital Cameras, Pagers, PDAs, Notebook PCs, etc. w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM8110M832D consists of an P-Channel Enhancement-mode MOSFET and a Low VF Schottky Rectifier. Packaged in a small, thermally efficient, leadless 3x2mm surface mount case, it is designed for applications where small size, operational efficiency, and low energy consumption are the prime requirements. MARKING CODE: CFR FEATURES • Dual Chip Device • High Current (0.95A) MOSFET and 1.0A Schottky Rectifier • Low rDS(ON): 0.24Ω MAX @ VGS=1.8V • Low VF Schottky Rectifier (550mV @ 1.0A MAX) • Small TLM 3x2mm Leadless Surface Mount Package • Complementary Device: CTLM7110-M832D MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL Power Dissipation (Note 1) PD 1.65 Operating and Storage Junction Temperature TJ, Tstg -65 to +150 Thermal Resistance ΘJA 76 MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 8.0 Continuous Drain Current (Steady State) ID 0.86 Continuous Drain Current, tp<5.0s ID 0.95 Continuous Source Current (Body Diode) IS 0.36 Maximum Pulsed Drain Current, tp=10μs IDM 4.0 Maximum Pulsed Source Current, tp=10μs ISM 4.0 MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage VRRM 40 Continuous Forward Current IF 1.0 Peak Repetitive Forward Current, tp<1.0ms IFRM 3.5 Peak Forward Surge Current, tp=8.0ms IFSM 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=8.0V, VDS=0 1.0 50 IDSS VDS=20V, VGS=0 5.0 500 BVDSS VGS=0, ID=250μA 20 24 VGS(th) VDS=VGS, ID=250μA 0.45 0.76 1.0 VSD VGS=0, IS=360mA 0.9 rDS(ON) VGS=4.5V, ID=0.95A 0.085 0.15 rDS(ON) VGS=4.5V, ID=0.77A 0.085 0.142 rDS(ON) VGS=2.5V, ID=0.67A 0.13 0.2 rDS(ON) VGS=1.8V, ID=0.2A 0.19 0.24 gFS VDS=10V, ID=0.81A 2.0 Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2. UNITS W °C °C/W V V A A A A A V A A A UNITS nA nA V V V Ω Ω Ω Ω S R2 (2-August 2011) CTLM8110-M832D MULTI DISCRETE MODULE ™ SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN Qg(tot) VDS=10V, VGS=4.5V, ID=1.0A Qgs VDS=10V, VGS=4.5V, ID=1.0A Qgd VDS=10V, VGS=4.5V, ID=1.0A Crss VDS=16V, VGS=0, f=1.0MHz Ciss VDS=16V, VGS=0, f=1.0MHz Coss VDS=16V, VGS=0, f=1.0MHz ton VDD=10V, VGS=4.5V, ID=0.95A, RG=6.0Ω toff VDD=10V, VGS=4.5V, ID=0.95A, RG=6.0Ω ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) SYMBOL TEST CONDITIONS IR VR=5.0V IR VR=8.0V IR VR=15V BVR IR=100μA VF IF=10mA VF IF=100mA VF IF=500mA VF IF=1.0A CJ VR=4.0V, f=1.0MHz MIN TYP 3.56 0.36 1.52 80 200 60 20 25 MAX UNITS nC nC nC pF pF pF ns ns TYP MAX 10 20 50 UNITS μA μA μA V V V V V pF 40 0.29 0.36 0.45 0.55 50 TLM832D CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS For Maximum Power Dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details PIN CONFIGURATION LEAD CODE: 1) Gate Q1 2) Source Q1 3) Anode D1 4) Anode D1 * Note: - Exposed pad P1 common to pins 7 and 8 - Exposed pad P2 common to pins 5 and 6 w w w. c e n t r a l s e m i . c o m 5) 6) 7) 8) Cathode D1 Cathode D1 Drain Q1 Drain Q1 MARKING CODE: CFR R2 (2-August 2011)