ISOCOM CNX72AX

CNX72AX
CNX72A
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead forms : - STD
- G form
- SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The CNX72A of optically coupled isolator
consists of an infrared light emitting diode and
a NPN silicon photo transistor in a standard 6
pin dual in line plastic package.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio (40% min)
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Low Saturation Voltage suitable for TTL
integrated circuits
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
7.62
Dimensions in mm
2.54
7.0
6.0
1
2
6
5
3
4
1.2
7.62
6.62
7.62
4.0
3.0
13°
Max
0.5
3.0
0.5
3.35
0.26
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Power Dissipation
30V
70V
6V
160mW
POWER DISSIPATION
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92235m-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output
Coupled
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
6
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Collector-base Breakdown (BVCBO)
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (IC / IF )
(Note 2)
1.2
V
V
µA
IF = 10mA
IR = 10µA
VR = 6V
30
V
IC = 1mA
70
6
V
V
nA
IC = 100µA
IE = 100µA
VCE = 10V
10
50
0.4
Collector-emitter Saturation VoltageVCE (SAT)
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance RISO
Note 1
Note 2
7/12/00
1.5
TEST CONDITION
1.6
0.4
5300
7500
5x1010
10mA IF , 0.4V VCE
V
10mA IF , 4mA IC
VRMS
VPK
Ω
See note 1
See note 1
VIO = 500V (note 1)
VCC = 5V , IC = 2mA ,
RL= 1kΩ,RΒΕ= 56kΩ
VCC = 5V , IC = 2mA ,
RL= 1kΩ,RΒΕ= 56kΩ
Turn-on Time
ton
26
µs
Turn-off Time
toff
25
µs
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92235m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
150
100
50
50
30
40
20
30
15
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
6
8
Collector-emitter Saturation
Voltage vs. Ambient Temperature
60
50
40
30
20
0
-30
0
25
50
75
100
125
Collector-emitter saturation voltage V
CE(SAT)
(V)
Forward Current vs. Ambient Temperature
10
10
0.28
0.24
IF = 10mA
IC = 4mA
0.20
0.16
0.12
0.08
0.04
0
-30
Ambient temperature TA ( °C )
0
25
50
75
100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
2.8
1.5
IF = 10mA
VCE = 0.4V
Relative current transfer ratio
Relative current transfer ratio
4
Collector-emitter voltage VCE ( V )
70
1.0
0.5
2.4
2.0
1.6
1.2
0.8
VCE = 0.4V
TA = 25°C
0.4
0
0
-30
7/12/00
2
Ambient temperature TA ( °C )
80
Forward current I F (mA)
TA = 25°C
50
Collector current I C (mA)
Collector power dissipation P C (mW)
200
0
25
50
75
Ambient temperature TA ( °C )
100
1
2
5
10
20
50
Forward current IF (mA)
DB92235m-AAS/A1