CZD5103 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente D-Pack (TO-252) DESCRIPTION The CZD5103 is designed for high speed switching applications. FEATURES Low saturation voltage, typically VCE(sat)= 0.15V at IC/IB= 3A/0.15A High speed switching, typically Tf = 0.1s at IC= 3A Wide SOA Complements to CZD1952 A B C D GE K M HF N O P J Collector MARKING 5103 REF. A B C D E F G H Date Code Base Emitter 1 Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 SWITCHING TIME TEST CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature http://www.SeCoSGmbH.com/ 23-Apr-2010 Rev. A Symbol Ratings Unit VCBO VCEO VEBO IC IC 100 60 5 6 20 V V V A A PD 1 W PD 10 W TJ TSTG 150 -55 ~ 150 ℃ ℃ Any changes of specification will not be informed individually. Page 1 of 4 CZD5103 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO 100 - - V IC=50 A, IE=0 Collector-emitter breakdown voltage V(BR)CEO 60 - - V IC=1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=50 A, IC=0 Collector cut-off current ICBO - - 10 A VCB=100V, IE=0 Emitter cut-off current IEBO - - 10 A VEB=5V, IC=0 *VCE(sat)1 - 0.15 0.3 V IC=3A, IB=0.15A *VCE(sat)2 - - 0.5 V IC=4A, IB=0.2A *VBE(sat)1 - - 1.2 V IC=3A, IB=0.15A *VBE(sat)2 - - 1.5 V IC=4A, IB=0.2A *hFE1 120 - 270 VCE=2V, IC=1A *hFE2 40 - - VCE=2V, IC=3A Transition frequency fT - 210 - MHz Output Capacitance COB - 80 - pF VCE=10V, IE=0, f=1MHz Turn-On Time TON - - 0.3 Storage Time TSTG - - 1.5 S IC=3A, RL=10Ω, IB1=-IB2=0.15A, VCC=30V Tf - 0.1 0.3 Collector-emitter saturation voltage Base-emitter saturation voltage *DC current gain Fall Time VCB=10V, IE=-0.5A, f=30MHz *Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2% http://www.SeCoSGmbH.com/ 23-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 CZD5103 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Apr-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4