TetraFET D1015UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL B (4 pls) C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND APPLICATIONS DH PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 • LOW Crss PIN 3 DRAIN 2 PIN 4 GATE 2 • SIMPLE BIAS CIRCUITS PIN 5 GATE 1 DIM A B C D E F G H I J K M N • LOW NOISE mm 13.97 5.72 45° 9.78 1.65R 23.75 1.52R 30.48 19.17 0.13 2.54 1.52 5.08 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.26 0.02 0.13 0.13 0.50 Inches 0.550 0.225 45° 0.385 0.065R 0.935 0.060R 1.200 0.755 0.005 0.100 0.060 0.200 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.010 0.001 0.005 0.005 0.020 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 350W 70V ±20V 20A –65 to 150°C 200°C * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00 D1015UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS Drain–Source V VGS = 0 ID = 100mA VDS = 28V VGS = 0 4 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs VDS = 10V ID = 4A IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* 70 1 3.2 S 13 dB 50 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 125W Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 500MHz h IDQ = 1.6A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 240 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 120 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 10 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 0.5°C / W Prelim. 11/00 D1015UK 3RXW : I 0+] ,GT $ 9GV 9 3LQ: 3RXW 'UDLQ(IILFLHQF\ 'UDLQ(IILFLHQF\ 3RXW : *DLQ G% 3LQ: Figure 1 Power Output and Efficiency vs. Input Power I 0+] ,GT $ 9GV 9 3RXW *DLQ Figure 2 Power Output and Gain vs. Input Power D1015UK OPTIMUM SOURCE AND LOAD IMPEDANCE ,0' G%F I 0+] I 0+] ,GT $ 9GV 9 3RXW:3(3 Frequency MHz ZS ZL 400 1.7 - j0.1 2.7 - j1 W W ,0' Figure 3 Power Output and Gain vs. Input Power Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00 D1015UK 1 0 0 n F + 2 8 V G a te -B ia s 5 .6 K 3 K 1 0 0 n F 5 x 5 m m c o n ta c t p a d 5 x 5 m m c o n ta c t p a d T 1 1 0 n F L 1 L 2 9 1 p F D 1 0 1 5 U K T 2 2 -1 8 p F 1 0 0 1 0 0 u F 2 -1 8 p F 3 0 p F 2 -1 8 p F T 4 6 8 0 p F 3 0 p F T 5 T 3 9 1 p F 6 8 0 p F D 1 0 1 5 U K 5 x 5 m m c o n ta c t p a d 5 x 5 m m c o n ta c t p a d T 6 2 -1 8 p F D1015UK Test Fixture Semelab plc. T1 T2, 3 T4,5 T6 12cm 50 ohm UT85 semi-rigid coax on ferrite core 7.5cm 15 ohm UT85-15 semi-rigid coax 7cm 15 ohm UT85-15 semi-rigid coax 11cm 50 ohm UT85 semi-rigid coax on ferrite core L1 L2 6.5 turns 25swg enamelled copper wire on Fair-Rite FT50B-43 core 6.5 turns 25swg enamelled copper wire, internal diameter Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00