ROHM DAP236U_11

Data Sheet
Band Switching Diode
DAP236U
Dimensions (Unit : mm)
Applications
High frequency switching
Land size figure (Unit : mm)
1.3
2.0±0.2
0.3±0.1
各リードとも
Each lead has same dimension 0.15±0.05
同寸法
1.6
(3)
2.1±0.1
1.25±0.1
0.9MIN.
0.65
Features
1)Ultra small mold type. (UMD3)
2)High reliability
0.1Min
0～0.1
(2)
(1)
（0.65）
（0.65）
0.8MIN
UMD3
0.7±0.1
1.3±0.1
0.9±0.1
Construction
Silicon epitaxial planar
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
Taping specifications (Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
VR
Reverse voltage (DC)
Junction temperature
Tj
Storage temperature
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Symbol
VF
Forward voltage
φ0.5±0.05
4.0±0.1
Limits
1.25±0.1
Unit
mW
V
°C
°C
150
35
125
55 to 125
Min.
Typ.
Max.
Unit
-
-
1.0
V
Conditions
IF=10mA
Reverse current
Capacitance between terminals
IR
-
-
10
nA
VR=25V
Ct
-
-
1.2
pF
Forward operating resistance
rf
-
-
0.9
Ω
VR=6V , f=1MHz
IF=2mA , f=100MHz
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1/3
2.4±0.1
8.0±0.2
0～0.1
2.4±0.1
2.25±0.1
0
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
2011.06 - Rev.A
Data Sheet
DAP236U
100
Ta=125℃
10
10
f=1MHz
Ta=125℃
Ta=25℃
1
Ta=25℃
0.1
0.01
Ta=75℃
1
0.1
Ta=25℃
0.01
Ta=25℃
0.001
300
400
500
600
700
800
0
900 1000 1100 1200
10
20
30
FORWARD OPERATING
RESISTANCE:rf(Ω)
FORWARD VOLTAGE : VF(mV)
1
850
840
830
820
AVE:829.3mV
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0.5
0.4
0.3
0.2
PEAK SURGE
FORWARD CURRENT : I FSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
AVE:0.807pF
0
0.06
0.05
0.04
0.03
0.01
IR DISPERSION MAP
5
Ifsm
1cyc
15
8.3ms
10
5
AVE:5.60A
3
2
1
AVE:1.20ns
IFSM DISRESION MAP
1
0.6
0.5
0.4
0.3
AVE:0.602Ω
0.1
trr DISPERSION MAP
100
10
9
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ta=25℃
f=100MHz
IF=2mA
n=10pcs
0.7
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
Irr=0.1*IR
n=10pcs
4
0
Ct DISPERSION MAP
0.8
AVE:0.0116nA
0.02
0
0.9
30
0
0.1
FORWARD OPERATING
RESISTANCE:rf(Ω)
0.07
20
0.7
25
Ta=25℃
VR=25V
n=30pcs
0.08
VF DISPERSION MAP
1
0.8
20
10
FORWARD CURRENT : IF(mA)
rf-IF CHARACTERISTICS
0.9
15
0.1
810
0.1
10
0.09
Ta=25℃
IF=10mA
n=30pcs
f=100MHz
1
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
860
10
0.6
0
50
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
0.1
0.01
40
REVERSE CURRENT : IR(nA)
200
REVERSE RECOVERY TIME:trr(ns)
100
Ifsm
PEAK SURGE
FORWARD CURRENT : I FSM(A)
0
1
0.1
0.0001
0.001
0.2
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
REVERSE CURRENT : IR(nA)
FORWARD CURRENT : I F(mA)
Ta=75℃
8
8.3ms
7
8.3ms
1cyc
6
5
4
3
2
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© 2011 ROHM Co., Ltd. All rights reserved.
10
1
1
FORWARD CURRENT : IF(mA)
rf DISPERSION MAP
t
1
0
0
Ifsm
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
2/3
100
0.1
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
2011.06 - Rev.A
10
Rth(j-a)
100
9
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
1000
Rth(j-c)
Mounted on epoxy board
IM=1mA
10
1ms
1
0.001
Data Sheet
DAP236U
IF=10mA
time
0.1
1
10
7
6
AVE:6.63kV
5
4
3
AVE:0.88kV
2
1
300us
0.01
8
0
100
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
1000
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
2011.06 - Rev.A
Notice
Notes
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R1120A