DYNEX DFM600FXS12-A000

DFM600FXS12-A000
Fast Recovery Diode Module
DS5847-1.1 June 2007 (LN25319)
FEATURES
•
Low Reverse Recovery Charge
•
High Switching Speed
•
Low Forward Voltage Drop
•
Isolated Copper Base plate
•
Dual Diodes Can be paralleled for 1200A Rating
•
Lead Free construction
KEY PARAMETERS
VRRM
VF
IF
IFM
(typ)
(max)
(max)
1200V
1.9V
600A
1200A
APPLICATIONS
•
Chopper Diodes
•
Boost and Buck Converters
•
Free-wheel Circuits
•
Snubber Circuit
•
Resonant Converters
•
Induction Heating
•
Multi-level Switch Inverters
The DFM600FXS12-A000 is a dual 1200V, fast
recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of
high voltage applications in motor drives and power
conversion.
Fast switching times and low reverse recovery
losses allow high frequency operation making the
device suitable for the latest drive designs
employing pwm and high frequency switching.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
Fig. 1 Circuit diagram
ORDERING INFORMATION
Order As:
Outline type code: F
DFM600FXS12-A000
(See package details for further information)
Note: When ordering, please use the whole part number.
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DFM600FXS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
VRRM
Parameter
Test Conditions
Max.
Units
Repetitive peak reverse voltage
Tvj = 125°C
1200
V
IF
Forward current (per arm)
DC, Tcase = 75°C, T vj = 125°C
600
A
IFM
Max. forward current
Tcase =110°C, t p = 1ms
1200
A
I2 t
I2t value fuse current rating
VR = 0, tP = 10ms, Tvj = 125°C
100
kA 2s
Pmax
Maximum power dissipation
Tcase = 25°C, T vj = 125°C
2500
W
Visol
Isolation voltage – per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
2500
V
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Symbol
Rth(j-c)
Al2O3
Copper
32mm
20mm
175
Parameter
Thermal resistance – diode (per arm)
Test Conditions
Continuous dissipation –
Min.
Typ.
Max.
Units
-
-
40
°C/kW
-
-
8
°C/kW
junction to case
Rth(c-h)
Tj
Tstg
-
Thermal resistance – case to heatsink
Mounting torque 5Nm
(per module)
(with mounting grease)
Junction temperature
-
-
-
125
°C
Storage temperature range
-
-40
-
125
°C
Mounting – M6
-
-
5
Nm
Electrical connections – M8
-
-
10
Nm
Screw torque
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
STATIC ELECTRICAL CHARACTERISTICS – PER ARM
Tcase = 25°C unless stated otherwise.
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IRM
Peak reverse current
VR = 1200V, Tvj = 125°C
-
-
15
mA
VF
Forward voltage
IF = 600A
-
1.9
2.2
V
IF = 600A, Tvj = 125°C
-
2.1
2.4
V
-
-
20
-
nH
Test Conditions
Min.
Typ.
Max.
Units
-
-
15
-
nH
Test Conditions
Min.
Typ.
Max.
Units
-
400
-
A
-
100
-
µC
VR = 600V
-
40
-
mJ
Test Conditions
Min.
Typ.
Max.
Units
-
475
-
A
-
150
-
µC
-
70
-
mJ
LM
Inductance
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
LM
Parameter
Module Inductance
(externally connected in parallel)
DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM
Tcase = 25°C unless stated otherwise.
Parameter
Symbol
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
IF = 600A,
dIF/dt = 4500A/µs,
Tcase = 125°C unless stated otherwise.
Parameter
Symbol
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
Erec
Reverse recovery energy
IF = 600A,
dIF/dt = 4200A/µs,
VR = 600V
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
TYPICAL CHARACTERISTICS – PER ARM
Fig.3 Diode typical forward characteristics
Fig.4 Transient thermal impedance
Fig.5 Power dissipation
Fig.6 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
Fig.7 RBSOA
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1600g
Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DFM600FXS12-A000
SEMICONDUCTOR
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Fax: +44(0)1522 500550
CUSTOMER SERVICE
Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Tel: +44(0)1522 500500
 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
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follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
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fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
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subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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