INTERSIL DG411AK/883

DG411/883, DG412/883
DG413/883
®
August 2003
Features
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Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• ON-Resistance <35Ω Max
• Low Power Consumption (PD <35µW)
• Fast Switching Action
- tON <175ns
- tOFF <145ns
• Low Charge Injection
• TTL, CMOS Compatible
• Single or Split Supply Operation
Applications
• Audio Switching
• Data Acquisition
• Hi-Rel Systems
• Sample and Hold Circuits
• Communication Systems
• Automatic Test Equipment
Part Number Information
PACKAGE
DG411AK/883
-55oC
+125oC
16 Lead CerDIP
DG412AK/883
-55oC to +125oC
16 Lead CerDIP
DG413AK/883
o
to
o
-55 C to +125 C
16 Lead CerDIP
Functional Diagrams
Pinout
DG411/883, DG412/883,
DG413/883 (CERDIP)
TOP VIEW
IN1
1
16 IN2
D1
2
15 D2
S1
3
14 S2
V- 4
13 V+
GND 5
12 VL
S4
6
11 S3
D4
7
10 D3
IN4
8
9 IN3
(NC) NO CONNECTION
These switches feature lower analog ON resistance (<35Ω)
and faster switch time (tON <175ns) compared to the DG211
or DG212. Charge injection has been reduced, simplifying
sample and hold applications.
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with analog
signals is quite low over a ±15V analog input range. The
switches in the DG411/883 and DG412/883 are identical, differing only in the polarity of the selection logic. Two of the
switches in the DG413/883 (#1 and #4) use the logic of the
DG211 and DG411/883 (i.e. a logic “0” turns the switch ON)
and the other two switches use DG212 and DG412/883 positive logic. This permits independent control of turn-on and
turn-off times for SPDT configurations, permitting “breakbefore-make” or “make-before-break” operation with a minimum of external logic.
• Battery Operated Systems
TEMP. RANGE
The DG411/883 series monolithic CMOS analog switches
are drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole
throw (SPST) analog switches, and TTL and CMOS compatible digital inputs.
The improvements in the DG411/883 series are made possible by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS
technologies. The 44V maximum voltage range permits controlling 40VP-P signals. Power supplies may be single-ended
from +5V to +34V, or split from ±5V to ±20V.
• Upgrade from DG211/DG212
PART NUMBER
CMOS Analog Switches
Four SPST Switches per Package Switches Shown for Logic “1” Input
DG411/883
DG412/883
S1
IN1
DG413/883
S1
IN1
D1
S2
IN2
D1
S2
D2
S3
D3
S4
D2
S3
IN3
IN3
IN4
D1
S2
IN2
IN2
D2
S3
IN3
S1
IN1
D3
S4
IN4
IN4
D4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved
1
All other trademarks mentioned are the property of their respective owners.
D3
S4
D4
D4
Spec Number
File Number
512043
3681.1
DG411/883, DG412/883, DG413/883
Pin Description
TRUTH TABLE
DG411/
883
DG412/
883
LOGIC
SWITCH
SWITCH
SWITCH
1, 4
SWITCH
2, 3
Source (Input) Terminal for Switch 1
0
ON
OFF
OFF
ON
Negative Power Supply Terminal
1
OFF
ON
ON
OFF
PIN
SYMBOL
DESCRIPTION
1
IN1
Logic Control for Switch 1
2
D1
Drain (Output) Terminal for Switch 1
3
S1
4
V-
5
GND
6
S4
Source (Input) Terminal for Switch 4
7
D4
Drain (Output) Terminal for Switch 4
8
IN4
Logic Control for Switch 4
9
IN3
Logic Control for Switch 3
10
D3
Drain (Output) Terminal for Switch 3
11
S3
Source (Input) Terminal for Switch 3
12
VL
Logic Reference Voltage
13
V+
Positive Power Supply Terminal (Substrate)
14
S2
Source (Input) Terminal for Switch 2
15
D2
Drain (Output) Terminal for Switch 2
16
IN2
Logic Control for Switch 2
DG413/883
NOTE: Logic “0” ≤0.8V. Logic “1” ≥2.4V.
Ground Terminal (Logic Common)
Spec Number
2
512043
Specifications DG411/883, DG412/883, DG413/883
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
VL (Note 2) . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3V) to (V+) +0.3V
Digital Inputs, VS, VD (Note 2) . . . . . (V-) -2V to (V+) + 2V or 30mA,
Whichever Occurs First
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA
Current, S or D (Pulsed 1ms, 10% Duty Cycle) . . . . . . . . . . . 100mA
Storage Temperature Range (A Suffix) . . . . . . . . . -65oC to +125oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Resistance (Note 3)
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . .
75oC/W
20oC/W
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Operating Temperature (A Suffix) . . . . . . . . . . . . . . -55oC to +125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Max
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V Max
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V Min
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .≤20ns
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
PARAMETERS
Drain-to-Source
ON Resistance
SYMBOL
RDS(ON)
DG411/883
DG412/883
CONDITIONS
V+ = +13.5V,
V- = -13.5V,
IS = -10mA,
VD = ±8.5V
DG413/883
V+ = +10.8V,
V- = -0V,
IS = -10mA,
VD = 3.0V and
8.0V
DG412/883
DG413/883
DG411/883
DG412/883
DG412/883
DG413/883
VIN = 0.8V
VIN = 2.4V
IS(OFF)
V+ = 16.5V,
V- = -16.5V,
VD = -15.5V,
VS = 15.5V
VIN = 2.4V
VIN = 0.8V
VIN = 0.8V or
2.4V (Note 1)
V+ = 16.5V,
V- = -16.5V,
VD = 15.5V,
VS = -15.5V
VIN = 2.4V
VIN = 0.8V
VIN = 0.8V or
2.4V (Note 1)
LIMITS
MIN
MAX
UNITS
1, 3
+25oC, -55oC
0
35
Ω
2
+125oC
0
45
Ω
1, 3
+25 C, -55 C
0
35
Ω
2
+125oC
0
45
Ω
o
o
1, 3
+25 C, -55 C
0
35
Ω
2
+125oC
0
45
Ω
0
80
Ω
0
100
Ω
1, 3
2
VIN = 0.8V or
2.4V (Note 1)
DG413/883
DG411/883
VIN = 2.4V
VIN = 0.8V or
2.4V (Note 1)
DG411/883
Source OFF Leakage Current
VIN = 0.8V
GROUP A
SUBGROUP TEMPERATURE
o
+25oC,
o
-55oC
+125oC
1, 3
+25 C, -55 C
0
80
Ω
2
+125oC
0
100
Ω
o
o
1, 3
+25 C, -55 C
0
80
Ω
2
+125oC
0
100
Ω
1
+25oC
-0.25
+0.25
nA
2, 3
+125oC, -55oC
-20
+20
nA
o
o
o
1
+25 C
-0.25
+0.25
nA
2, 3
+125oC, -55oC
-20
+20
nA
o
1
+25 C
-0.25
+0.25
nA
2, 3
+125oC, -55oC
-20
+20
nA
o
1
+25 C
-0.25
+0.25
nA
2, 3
+125oC, -55oC
-20
+20
nA
o
1
+25 C
-0.25
+0.25
nA
2, 3
+125oC, -55oC
-20
+20
nA
1
+25oC
-0.25
+0.25
nA
2, 3
+125oC, -55oC
-20
+20
nA
Spec Number
3
512043
Specifications DG411/883, DG412/883, DG413/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
PARAMETERS
Drain OFF Leakage Current
SYMBOL
ID(OFF)
DG411/883
DG412/883
CONDITIONS
V+ = 16.5V,
V- = -16.5V,
VD = -15.5V,
VS = 15.5V
DG413/883
V+ = 16.5V,
V- = -16.5V,
VD = 15.5V,
VS = -15.5V
DG412/883
DG413/883
DG411/883
VIN = 0.8V
VIN = 0.8V or
2.4V (Note 1)
DG411/883
Channel ON Leakage Current
VIN = 2.4V
VIN = 2.4V
VIN = 0.8V
VIN = 0.8V or
2.4V (Note 1)
ID(ON) +
IS(ON)
DG412/883
DG413/883
V+ = 16.5V,
VIN = 0.8V
V- = -16.5V,
VS = VD = ±15.5V
VIN = 2.4V
VIN = 0.8V or
2.4V (Note 1)
GROUP A
SUBGROUP TEMPERATURE
1
+25oC
o
o
LIMITS
MIN
MAX
UNITS
-0.25
+0.25
nA
2, 3
+125 C, -55 C
-20
+20
nA
1
+25oC
-0.25
+0.25
nA
o
o
2, 3
+125 C, -55 C
-20
+20
nA
1
+25oC
-0.25
+0.25
nA
o
o
2, 3
+125 C, -55 C
-20
+20
nA
1
+25oC
-0.25
+0.25
nA
o
o
2, 3
+125 C, -55 C
-20
+20
nA
1
+25oC
-0.25
+0.25
nA
o
o
2, 3
+125 C, -55 C
-20
+20
nA
1
+25oC
-0.25
+0.25
nA
o
o
2, 3
+125 C, -55 C
-20
+20
nA
1
+25oC
-0.4
+0.4
nA
o
o
2, 3
+125 C, -55 C
-40
+40
nA
1
+25oC
-0.4
+0.4
nA
o
o
2, 3
+125 C, -55 C
-40
+40
nA
1
+25oC
-0.4
+0.4
nA
-55oC
-40
+40
nA
Input Current with VIN Low
IIL
Input Under Test = 0.8V,
All Others = 2.4V
1, 2, 3
+25oC, +125oC,
-55oC
-0.5
+0.5
µA
Input Current with VIN High
IIH
Input Under Test = 2.4V,
All Others = 0.8V
1, 2, 3
+25oC, +125oC,
-55oC
-0.5
+0.5
µA
Positive Supply Current
I+
V+ = 16.5V, V- = -16.5,
VIN = 0Vor 5.0V
1
+25oC
-
+1.0
µA
V+ = 13.2V, V- = 0V,
VIN = 0Vor 5.0V
VL = 5.25V
Negative Supply Current
I-
V+ = 16.5V, V- = -16.5,
VIN = 0V or 5.0V
V+ = 13.2V, V- = 0V,
VIN = 0V or 5.0V
VL = 5.25V
Logic Supply Current
IL
V+ = 16.5V, V- = -16.5,
VIN = 0V or 5.0V
V+ = 13.2V, V- = 0V,
VIN = 0V or 5.0V
VL = 5.25V
Ground Current
IGND
V+ = 16.5V, V- = -16.5,
VIN = 0V or 5.0V
V+ = 13.2V, V- = 0V,
VIN = 0V or 5.0V
VL = 5.25V
2, 3
+125oC,
2, 3
+125 C, -55 C
-
+5.0
µA
1
+25oC
-
+1.0
µA
o
o
2, 3
+125 C, -55 C
-
+5.0
µA
1
+25oC
-1.0
-
µA
2, 3
+125oC, -55oC
-5.0
-
µA
o
o
1
+25 C
-1.0
-
µA
2, 3
+125oC, -55oC
-5.0
-
µA
1
+25oC
-
+1.0
µA
o
2, 3
+125 C, -55 C
-
+5.0
µA
1
+25oC
-
+1.0
µA
o
o
2, 3
+125 C, -55 C
-
+5.0
µA
1
+25oC
-1.0
-
µA
2, 3
+125oC, -55oC
-5.0
-
µA
o
o
1
+25 C
-1.0
-
µA
2, 3
+125oC, -55oC
-5.0
-
µA
o
Spec Number
4
512043
Specifications DG411/883, DG412/883, DG413/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
PARAMETERS
SYMBOL
Turn ON Time
CONDITIONS
tON
Turn OFF Time
tOFF
LIMITS
GROUP A
SUBGROUP TEMPERATURE
MIN
MAX
UNITS
0
175
ns
+125 C
0
240
ns
+25oC, -55oC
0
250
ns
+125 C
0
400
ns
9, 11
+25oC, -55oC
0
145
ns
10
+125oC
0
160
ns
CL = 35pF, VS = ±10V,
RL = 300Ω
9, 11
10
V+ = 12V, V- = 0V,
CL = 35pF, VS = +8V,
RL = 300Ω
9, 11
10
CL = 35pF, VS = ±10V,
RL = 300Ω
V+ = 12V, V- = 0V,
CL = 35pF, VS = +8V,
RL = 300Ω
+25oC, -55oC
o
o
o
o
9, 11
+25 C, -55 C
0
125
ns
10
+125oC
0
140
ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)
Device Tested at: V+ = +15V, V- = -15V, VL = 5V, GND = 0V, Unless Otherwise Specified
PARAMETERS
SYMBOL
Charge Injection
Q
LIMITS
GROUP A
SUBGROUP TEMPERATURE
CONDITIONS
See Figure 2, VG = 0V, RG = 0Ω ,
TA = +25oC, CL = 10nF
See Figure 2,
VG = 6V, RG = 0Ω , TA = +25oC
CL = 10nF, V+ = 12V, V- = 0V
o
9
+25 C
MIN
MAX
UNITS
-100
+100
pC
+25oC
pC
o
9
+25 C
-100
+100
+25oC
pC
pC
NOTES:
1. VIN = Input Voltage to Perform Proper Function.
2. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
3. All leads soldered or welded to PC board.
4. Parameters listed in Table 3 are controlled via design or process and are not directly tested at final production. These parameters are lab
characterized upon initial design release or upon design changes. These parameters are guaranteed by characterization based upon
data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLES 1 AND 2)
Interim Electrical Parameters (Pre Burn-In)
1
Final Electrical Test Parameters
1 (Note 1), 2, 3, 9, 10, 11
Group A Test Requirements
1, 2, 3, 9, 10, 11
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
Spec Number
5
512043
DG411/883, DG412/883, DG413/883
Die Characteristics
DIE DIMENSIONS:
2760µm x 1780µm x 485 ± 25µm
METALLIZATION:
Type: SiAl
Thickness: 12kÅ ± 1kÅ
GLASSIVATION:
Type: Nitride
Thickness: 8kÅ ± 1kÅ
WORST CASE CURRENT DENSITY:
1.5 x 105A/cm2
Metallization Mask Layout
DG411/883, DG412/883, DG413/883
D1
2
IN1
IN2
1
16
15
D2
S1
3
14
S2
V-
4
13
V+ SUBSTRATE
GND
5
12
VL
S4
6
11
S3
7
8
9
10
D4
IN4
IN3
D3
Spec Number
6
512043
DG411/883, DG412/883, DG413/883
Test Circuits
VO is the steady state output with the switch on.
Feedthrough via switch capacitance may result in spikes at
the leading and trailing edge of the output waveform.
V+
RG
tR < 20ns (10% to 90% VIN)
tF < 20ns (90% to 10% VIN)
D1
VO
VG
CL
3V
LOGIC
INPUT
V-
50%
VIN = 3V
0V
tOFF
GND
SWITCH
INPUT VS
VO
SWITCH
OUTPUT
FIGURE 2A.
0.9 VO
0.9 VO
0V
tON
∆VO
NOTE: Logic input waveform is inverted for switches that have
the opposite logic sense.
0V
INX
FIGURE 1A.
+5V
ON
OFF
OFF
ON
Q = ∆VO x CL
OFF
+15V
VL
SWITCH
INPUT
OFF
V+
SWITCH
OUTPUT
D1
S1
VO
INX
IN1
RL
LOGIC
INPUT
INX dependent on switch configuration input polarity determined by
sense of switch.
CL
V-
GND
FIGURE 2B.
-15V
FIGURE 2. CHARGE INJECTION
Repeat test for all IN and S.
For load conditions, see Specifications CL (includes fixture and
stray capacitance)
VO
=
VS
RL
---------------------------------R L + R DS ( ON )
FIGURE 1B.
FIGURE 1. SWITCHING TIME
Spec Number
7
512043
DG411/883, DG412/883, DG413/883
Burn-In Circuit
DG411/883, DG412/883, DG413/883 CERAMIC DIP
R1
V-
C1
D1
VA
1 IN1
IN2 16
2 D1
D2 15
3 S1
S2 14
4 V-
V+ 13
5 GND
VL 12
6 S4
S3 11
7 D4
D3 10
8 IN4
IN3
R4
R2
V+
D2
C2
D3
C3
VL
9
R4
Typical Schematic Diagram (Typical Channel)
V+
S
VVL
V+
INX
D
GND
V-
Spec Number
8
512043
DG411/883, DG412/883, DG413/883
Ceramic Dual-In-Line Frit Seal Packages (CerDIP)
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
LEAD FINISH
c1
16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE
-D-
-A-
BASE
METAL
INCHES
(c)
E
b1
M
M
(b)
-Bbbb S
C A-B S
SECTION A-A
D S
D
BASE
PLANE
Q
-C-
SEATING
PLANE
A
α
L
S1
eA
A A
b2
b
ccc M
C A-B S
e
eA/2
c
aaa M C A - B S D S
D S
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.200
-
5.08
-
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.840
-
21.34
5
E
0.220
0.310
5.59
7.87
5
e
0.100 BSC
2.54 BSC
-
eA
0.300 BSC
7.62 BSC
-
3.81 BSC
-
eA/2
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
MILLIMETERS
0.150 BSC
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
6
S1
0.005
-
0.13
-
7
α
90
aaa
-
0.015
-
0.38
-
bbb
-
0.030
-
0.76
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
0.038
2, 3
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
N
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
o
105
o
90
16
o
105
o
-
16
8
Rev. 0 4/94
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
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Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
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Spec Number
9
512043
DG411, DG412
DG413
DESIGN INFORMATION
Monolithic Quad SPST CMOS Analog Switches
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Typical Performance Curves
ON-RESISTANCE vs VD AND POWER SUPPLY VOLTAGE
45
40
RDS(ON) (Ω)
35
A:
B:
C:
D:
E:
F:
SWITCHING TIME vs TEMPERATURE
240
±5V
±8V
±10V
±12V
±15V
±20V
V+ = 15V, V- = -15V
210 VL = 5V, VS = 10V
A
180
tON, tOFF (ns)
50
B
30
C
25
D
E
20
F
150
tON
120
tOFF
90
15
60
10
30
5
0
-20
TA = +25oC
-15
-10
-5
0
5
DRAIN VOLTAGE (V)
10
15
0
-55
20
LEAKAGE CURRENT vs ANALOG VOLTAGE
-35
-15
5
25
45
65
TEMPERATURE (oC)
85
105
125
SUPPLY CURRENT vs INPUT SWITCHING FREQUENCY
100mA
40
V+ = 15V, V- = -15V
30 VL = 5V, TA = 25oC
10mA
V+ = 15V, V- = -15V
VL = 5V
20
ID(OFF)
1mA
I+, IISUPPLY
IS, ID (pA)
10
0
IS(OFF)
-10
ID + S(ON)
-20
100µA
4SW
10µA
IL
-30
1µA
4SW
-40
100nA
-50
-60
-15
1SW
1SW
-10
-5
0
5
10
DRAIN OR SOURCE VOLTAGE (V)
10nA
10
15
100
1K
10K
100K
1M
10M
FREQUENCY (Hz)
CHARGE INJECTION vs ANALOG VOLTAGE (VD)
CHARGE INJECTION vs ANALOG VOLTAGE (VS)
100
140
V+ = 15V, V- = -15V
120 VL = 5V
V+ = 15V, V- = -15V
80 VL = 5V
CL = 10nF
100
60
80
CL = 10nF
Q (pC)
Q (pC)
40
20
0
CL = 1nF
60
40
20
0
-20
CL = 1nF
-20
-40
-40
-60
-15
-60
-15
-10
-5
0
5
SOURCE VOLTAGE (V)
10
15
-10
-5
0
5
DRAIN VOLTAGE (V)
10
Spec Number
10
15
512043