ECH8656 Ordering number : EN9010 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8656 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=13mΩ (typ.) Halogen free compliance Protection diode in • • 1.8V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 20 V ±10 V 7.5 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 TB 5 2.3 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.9 0.25 LOT No. TL 0.07 2.8 0 t o 0.02 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 83111PE TKIM TC-00002622 No.9010-1/4 ECH8656 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Ratings Conditions min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=4A, VGS=4.5V 9 13 17 mΩ RDS(on)2 ID=4A, VGS=4.0V 9.4 13.5 18 mΩ RDS(on)3 ID=4A, VGS=3.1V 11 16 22 mΩ RDS(on)4 ID=2A, VGS=2.5V 12.5 18 26 mΩ RDS(on)5 ID=0.5A, VGS=1.8V VDS=10V, f=1MHz 17 30 48 mΩ 0.5 1 μA ±10 μA 1.3 VDS=10V, ID=4A 7 V S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr See specified Test Circuit. See specified Test Circuit. 120 ns See specified Test Circuit. 68 ns Fall Time td(off) tf 80 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=7.5A 10.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4.5V, ID=7.5A VDS=10V, VGS=4.5V, ID=7.5A 2.1 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=7.5A, VGS=0V Rise Time Turn-OFF Delay Time VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. 1060 pF 180 pF 135 pF 17.5 ns 2.9 0.74 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=10V VIN ID=4A RL=2.5Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8656 P.G 50Ω ID -- VDS 3.5 3.0 2.5 VGS=1.5V 2.0 5 4 3 2 1.5 1.0 0.5 0 6 1 0 0.1 0.2 0.3 0.4 Drain-to-Source Voltage, VDS -- V 0.5 IT16586 0 0 0.5 1.0 --25°C 4.0 25°C 1.8V 8.0V 4.5 7 Ta=75 °C 5.0 3.0V 5.5 V 8 6.0V 6.0 VDS=10V 9 Drain Current, ID -- A 6.5 ID -- VGS 10 2.0 4.0V 7.0 2.5V 7.5 Drain Current, ID -- A S 1.5 2.0 Gate-to-Source Voltage, VGS -- V 2.5 IT12484 No.9010-2/4 ECH8656 RDS(on) -- VGS 40 RDS(on) -- Ta 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 35 30 ID=0.5A 2.0A 25 4.0A 20 15 10 5 0 0 2 4 6 8 A =2.0 V, I D 5 . 2 = VGS 20 15 A =4.0 V, I D 0 . 4 = VGS .0A I =4 4.5V, D = VGS 10 5 --50 --25 0 25 50 75 100 125 150 175 IT16588 IS -- VSD VGS=0V 3 3 C 5° 2 = Ta 1.0 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S = VGS 10 7 5 5 --2 75 °C °C 25 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 1000 0.01 5 7 10 IT12487 Drain Current, ID -- A 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V 1.0 IT12488 Ciss, Coss, Crss -- VDS 3 VDD=10V VGS=4V 7 f=1MHz 2 Ciss 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 25 A =4.0 , ID 3.1V Ambient Temperature, Ta -- °C VDS=10V 7 30 IT16587 | yfs | -- ID 10 A 0.5 , I D= 1.8V = VGS 0 --75 10 Gate-to-Source Voltage, VGS -- V 35 Ta=7 5°C 25°C --25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 2 td(off) 100 7 tf 5 tr 3 7 5 3 Coss Crss 2 100 td(on) 2 1000 7 10 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 100 7 5 3 2 VDS=10V ID=7.5A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 0 2 8 Total Gate Charge, Qg -- nC 9 10 11 IT12491 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 5 10 IT12489 VGS -- Qg 4.5 7 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO 18 20 IT12490 IDP=40A (PW≤10μs) 1m 100 μs s ID=7.5A DC 10 ms 10 op 0m er s ati on (T a= 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16507 No.9010-3/4 ECH8656 PD -- Ta Allowable Power Dissipation, PD -- W 1.6 When mounted on ceramic substrate (900mm2×0.8mm) 1.5 1.4 1.3 1.2 1.0 To t al di ss 0.8 1u ni 0.6 t ip at io n 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16508 Note on usage : Since the ECH8656 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2011. Specifications and information herein are subject to change without notice. PS No.9010-4/4