EDI9F416512C White Electronic Designs 4x512Kx16 Static RAM CMOS, Module FEATURES DESCRIPTION n 4x512Kx16 bit CMOS Static n Random Access Memory n Access Times 70 thru 100ns Data Retention Function (EDI9F416512LP ) TTL Compatible Inputs and Outputs Fully Static, No Clocks A low power version with data (EDI9F416512LP) is also available. retention All inputs and outputs are TTL compatible and operate from a single +5V supply. Fully asynchronous, the EDI9F416512C requires no clocks or refreshing for operation. High Density Packaging n The EDI9F416512C is a 32Mb CMOS Static RAM based on eight 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate (FR-4) substrate. 80 Pin SIMM, No. 372 Single +5V (±10%) Supply Operation FIG. 1: PIN CONFIGURATIONS AND BLOCK DIAGRAM Vss Vcc NC G WH WL NC E 1 2 3 4 5 6 7 8 NC NC NC NC NC NC NC NC NC NC NC NC E3 E2 E1 E0 Vss NC NC NC NC NC NC NC NC A18 A17 A16 A15 A14 A13 A12 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 October 2001 Rev. 2 ECO #14609 PIN NAMES A11 A10 A9 A8 A7 A6 A5 A4 41 42 43 44 45 46 47 48 AØ-A18 Address Inputs EØ-E3 Chip Enable G Output Enables A3 A2 A1 A0 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 Vss Vss DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQØ NC Vcc NC Vss NC Vss Vss NC NC Vss WH-WL Write Enables E Chip Select DQØ-DQ15 Data Input/Output VCC Supply 5 Volts VSS Ground NC No Connect AØ-A18 E G WH WL 128K x8 128K x8 128K x8 128K x8 128K x8 128K x8 128K x8 128K x8 EØ E1 E2 E3 1 DQ8-DQ15 DQØ-DQ7 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com EDI9F416512C White Electronic Designs ABSOLUTE MAXIMUM RATINGS* Voltage on any pin relative to VSS Operating Temperature TA (Ambient) Commercial Industrial Storage Temperature Plastic Power Dissipation Output Current RECOMMENDED DC OPERATING CONDITIONS -0.5V to 7.0V Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage 0°C to +70°C -40°C to +85°C -55°C to +125°C 1 Watt 20 mA *Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Sym VCC VSS VIH VIL Min 4.5 0 2.2 -0.3 Typ 5.0 0 Max 5.5 0 6.0 0.8 Units V V V V AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load 70ns 85-120ns VSS to 3.0V 5ns 1.5V 1TTL = 30pF 1TTL, CL =100pF (NOTE: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF) DC ELECTRICAL CHARACTERISTICS Parameter Operating Power Supply Current Standby (TTL) Power Supply Current Full Standby Power Supply Current CMOS Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Sym ICC1 ICC2 ICC3 ILI ILO VOH VOL Conditions W, E = VIL, II/O = 0mA, Min Cycle E ³ VIH, VIN £ VIL VIN ³ VIH E ³ VCC-0.2V VIN ³ VCC-0.2V or VIN £ 0.2V VIN = 0V to VCC V I/O = 0V to VCC IOH = -1.0mA IOL = 2.1mA E H L L L W X H H L Mode Standby Output Deselect Read Write Output High Z High Z DOUT DIN Typ 100 Max 158 Units mA 5 35 mA 25 150 mA µA ±10 ±10 0.4 µA µA V V 2.4 CAPACITANCE TRUTH TABLE G X H L X C LP Min (F=1.0MHZ, VIN=VCC OR VSS) Parameter Address Lines Data Lines Chip Enable Line Write and Output Enable Lines Power ICC2, ICC3 ICC1 ICC1 ICC1 White Electronic Designs Corporation Westborough MA (508) 366-5151 2 Sym CI CD/Q CC CW Max 60 50 25 60 Unit pF pF pF pF EDI9F416512C White Electronic Designs AC CHARACTERISTICS READ CYCLE Symbol JEDEC Alt. Parameter 70ns Min Max TAVAV TRC Address Access Time TAVQV TAA 70 85 100 Chip Enable Access Time TELQV TACS 70 85 100 Chip Enable to Output in Low Z (1) TELQX TCLZ Chip Disable to Output in High Z (1) TEHQZ TCHZ Output Hold from Address Change TAVQX TOH Output Enable to Output Valid TGLQV TOE TGLQX TOLZ Output Disable to Output in High Z(1) TGHQZ TOHZ FIG. 2 85 100ns Min Max Read Cycle Time Output Enable to Output in Low Z (1) 70 85ns Min Max 5 100 5 30 3 35 40 0 0 ns 40 ns 50 ns ns 0 35 ns ns 3 45 30 ns 5 3 Units ns 40 ns READ CYCLE 1 - W HIGH, G, E LOW TAVAV A ADDRESS 1 ADDRESS 2 TAVQV TAVQX Q DATA 1 DATA 2 9F416128C Rd Cyc1 FIG. 3 READ CYCLE 2 - W HIGH TAVAV A TAVQV E TELQV TEHQZ TELQX G TGLQV TGHQZ TGLQX Q 9F416128C Rd Cyc2 3 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com EDI9F416512C White Electronic Designs AC CHARACTERISTICS WRITE CYCLE Parameter Write Cycle Time Chip Enable to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Data Hold Time Write to Output in High Z (1) Data to Write Time Output Active from End of Write (1) Symbol JEDEC TAVAV TELWH TELEH TAVWL TAVEL TAVWH TAVEH TWLWH TWLEH TWHAX TEHAX TWHDX TEHDX TWLQZ TDVWH TDVEH TWHQX 70ns Min 70 65 65 0 0 65 65 65 65 0 0 0 0 0 30 30 5 Alt. TWC TCW TCW TAS TAS TAW TAW TWP TWP TWR TWR TDH TDH TWHZ TDW TDW TWLZ Max 30 85ns Min 85 70 70 0 0 70 70 70 70 0 0 0 0 0 35 35 5 Max 35 100ns Min 100 80 80 0 0 80 80 80 80 0 0 0 0 0 40 40 5 Note 1: Parameter guaranteed, but not tested. *Advance Information FIG. 4 WRITE CYCLE 1 - W CONTROLLED TAVAV A E TELWH TWHAX TAVWH TWLWH W TAVWL TDVWH D TWHDX DATA VALID TWHQX TWLQZ HIGH Z Q 9F416128C Write Cyc1 White Electronic Designs Corporation Westborough MA (508) 366-5151 4 Max 40 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns EDI9F416512C White Electronic Designs FIG. 5 WRITE CYCLE 2 - E CONTROLLED TAVAV A TAVEL TELEH E TAVEH TEHAX TWLEH W TDVEH D TEHDX DATA VALID HIGH Z Q 9F416128C Write Cyc2 DATA RETENTION CHARACTERISTICS Characteristic Data Retention Voltage Data Retention Quiescent Current Sym VDD ICCDR Chip Disable to Data Retention Time(1) Operation Recovery Time (1) TCDR TR Test Conditions VDD = 0.2V E VDD -0.2V VIN VDD -0.2V or VIN 0.2V VDD Min 2 Typ Max 3V 0 5 8 100 Unit V µA µA ns ms FIG. 6 DATA RETENTION - E CONTROLLED DATA RETENTION MODE 4.5V VCC 4.5V VDD TCDR E TR E ≥ VDD-0.2V 9F416128C Data Retent. 5 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com White Electronic Designs EDI9F416512C ORDERING INFORMATION Part Number Standard Power EDI9F416512C70BNC EDI9F416512C85BNC EDI9F416512C100BNC Low Power EDI9F416512LP70BNC EDI9F416512LP85BNC EDI9F416512LP100BNC Speed (ns) Package No. 70 85 100 372 372 372 70 85 100 372 372 372 NOTE: To order an Industrial grade product substitute the letter C in the Suffix with the letter I, eg. EDI9F416512C70BNC becomes EDI9F416512C70BNI. PACKAGE DESCRIPTION PACKAGE NO. 372: 80 LEAD SIMM ANGLED 4.655 MAX. (NOTE 2) 4.384 .250 P1 .725 .400 MAX. 179 REV # NOTE 3 .170 MAX. .125 DIA (2x) .250 .050 TYP. .225 MIN. 4.150 2.192 2.245 .062 R .050 +.004 -.003 NOTES: 1. U1-U8 = SRAM 2. Maximum dimension to be measured without including the breakaway area. 3. The revision level on both the substrate and the bill of materials should match. White Electronic Designs Corporation Westborough MA (508) 366-5151 6