Excelics EIA1616-4P PRELIMINARY DATA SHEET 16.2-16.4GHz, 4W Internally Matched Power FET • • • • • 16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM HIGH PAE( 25% TYPICAL) +36dBm TYPICAL P1dB OUTPUT POWER 7dB TYPICAL G1dB POWER GAIN NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1616-4P SYMBOLS PARAMETERS/TEST CONDITIONS P1dB UNIT MIN TYP Output Power at 1dB Compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss 35 36 dBm G1dB Gain at 1dB Compression Vds=8V, Idsq=0.5 Idss 6 7 dB PAE Power Added Efficiency at 1dB compression f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss 25 % Id1dB Drain Current at 1dB Compression 1760 mA f=16.2-16.4GHz rd IP3 Output 3 Order Intercept Point Vds=8V, Idsq=0.5 Idss Idss Saturated Drain Current Vds=3V, Vgs=0V Gm Transconductance Vds=3V, Vgs=0V Vp Pinch-off Voltage Vds=3V, Ids=48mA BVgd Drain Breakdown Voltage Igd=19.2mA Rth Thermal Resistance (Au-Sn Eutectic Attach) MAX f=16.2-16.4GHz dBm 2200 2880 3400 mA 3000 -1.0 -13 mS -2.5 V -15 V o 4.5 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V Vgs Gate-Source Voltage -8V -3V Ids Drain Current Idss 3120mA Igsf Forward Gate Current 360mA 60mA Pin Input Power 35dBm @ 3dB Compression Tch Channel Temperature 175oC 150oC Tstg Storage Temperature -65/175oC -65/150oC Total Power Dissipation 30W 25W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com