HTSEMI EMH9

EMH9
digital transistor (NPN+ NPN)
SOT-563
FEATURES
Two DTC114Ys chips in a package.
z
Transistor elements are independent, eliminating interference.
z
Mounting cost and area can be cut in half.
z
1
External circuit
MARKING:H9
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-6~40
V
IO
70
IC(MAX)
100
Power dissipation
Pd
150(TOTAL)
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Output current
mA
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Symbol
Min.
Typ
VI(off)
VI(on)
Max.
0.3
1.4
Unit
V
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=1 mA
Output voltage
VO(on)
0.3
V
IO/II=5mA/0.25mA
Input current
II
0.88
mA
VI=5V
Output current
IO(off)
0.5
μA
VCC=50V, VI=0
DC current gain
GI
68
Input resistance
R1
7
10
13
Resistance ratio
R2/R1
3.7
4.7
5.7
Transition frequency
fT
VO=5V ,IO=5mA
250
KΩ
MHz
VCE=10V ,IE=-5mA,f=100MHz
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05