ESD6V8CAW SILICON EPITAXIAL PLANAR DIODES For protecting against ESD 3 1 2 Marking Code: MB Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation PD 200 mW Junction Temperature TJ 125 O Storage Temperature Range Ts - 55 to + 125 O C C Electrical Characteristics at Ta = 25 OC Symbol Min. Typ. Max. Unit VZ 6.5 6.8 7.1 V Dynamic Impedance at IZ = 5 mA ZZ - - 50 Ω Knee Dynamic Impedance at IZ = 0.5 mA ZZK - - 100 Ω Reverse Current at VR = 5 V IR - - 0.5 µA Total Capacitance at VR = 0 V, f = 1 MHz CT - 6 - pF Parameter Zener Voltage at IZ = 5 mA 1) 1) Tested with pulses tp = 20 ms. ESD Immunity Level Parameter ESD Immunity Level at IEC61000-4-2 (Contact Discharge) Value Unit ±8 KV SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/04/2007 ESD6V8CAW SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/04/2007