polyfet rf devices F1415 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150 Watts Single Ended Package Style AM TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 250 Watts 0.8 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 10 A Drain to Source Voltage Gate to Source Voltage 150 V 150 V 30V 150WATTS OUTPUT ) MAX 13 65 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.6 A, Vds = 50.0 V, F = 150 MHz % Idq = 0.6 A, Vds = 50.0 V, F = 150 MHz Relative Idq = 0.6 A, Vds = 50.0 V, F = 150 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN Bvdss Drain Breakdown Voltag 125 Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson TYP MAX UNITS V 1 TEST CONDITIONS Ids = 0.1 A, Vgs = 0V 12 mA Vds = 50.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.15 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V Saturation Resistanc 0.25 Ohm Vgs = 20V, Ids = 10 A Idsat Saturation Curren 28.8 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 270 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 13.2 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 120 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1415 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1E 6 DICE CAPACITANCE F1415 POUT VS PIN F=150 MHZ; IDQ=0.5A; VDS=50V 1000 220 16.00 Ciss 15.00 180 14.00 140 13.00 Coss 100 Crss 12.00 100 Efficiency = 60% 11.00 60 10.00 20 10 9.00 0 2 4 6 8 10 12 14 16 18 PIN IN WATTS 0 20 POUT 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1E6DICE IV F1E 6 DICE ID & GM Vs VG 30 Id in amps; Gm in mhos 100.00 25 ID IN AMPS 20 15 10 5 Id 10.00 gM 1.00 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDSINVOLTS Vg=6v 14 vg=8v S11 AND S22 SMITH CHART vg=10v 16 18 20 0 2 4 6 8 10 12 14 16 18 20 Vgs in Volts vg=12v PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com