Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions · Adoption of FBET process. · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC11 is formed with two chips, being equivalent to the 2SK771, placed in one package. · Excellent in the thermal equilibrium and pair capability and suitable for use in differential amp. · Common source. unit:mm 2070 [FC11] G1:Gate1 G2:Gate2 D2:Drain2 SC:Source Common D1:Drain1 Electrical Connection SANYO:CP5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSX VGDS –40 V Gate Current IG 10 mA Drain Current Gate-to-Drain Voltage Total Dissipation ID PD PT Junction Temperature Tj Storage Temperature Tstg Allowable Power Dissipation 40 V 10 mA 200 mW 300 mW 150 ˚C –55 to +150 ˚C 1unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Gate-to-Drain Breakdown Voltage Ratings Conditions min V(BR)GDS IG=10µA, VDS=0 Gate Cutoff Current IGSS Cutoff Voltage VGS(off) ∆VGS Gate-to-Source Voltage Drop Drain Current IDSS Drain Current Ratio Forward Transfer Admittance | Yfs | Forward Transfer Admittance Ratio typ max –40 V VGS=–20V, VDS=0V –1.0 VDS=10V, ID=1µA |VGS large – VGS small |, VDS=10V, ID=1mA –0.3 VDS=10V, VGS=0V VDS=10V, IDSS small/IDSS large 1.2* Unit –0.9 –1.8 nA V 30 mV 6.0* mA 0.9 VDS=10V, VGS=0V, f=1kHz 4.5 VDS=10V, |Yfs|small / |Yfs|large 0.9 9.0 mS pF Input Capacitacnce Ciss VDS=10V, VGS=0V, f=1MHz 9.0 Reverse Transfer Capacitance Crss VDS=10V, VGS=0V, f=1MHz 2.1 pF VDS=10V, Rg=1kΩ, ID=1mA, f=1kHz 1.5 dB Noise Figure NF Note*:The FC11 is classified by IDSS as follows (unit:mA) 1.2 D 3.0 2.5 E 6.0 Marking:11 IDSS rank:D,E The Specifications shown above are for each individual transistor. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/7259TA, TS No.3154-1/3 FC11 No.3154-2/3 FC11 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3154-3/3