SANYO FC151

Ordering number:EN4652
FC151
PNP Epitaxial Planar Silicon Composite Transistor
High-Frequency Amp, Current Mirror
Circuit Applications
Features
Package Dimensions
· Composite type with 2 transistors contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC151 is formed with two chips, being equivalent to the 2SA1669, placed in one package.
· Excellent in thermal equilibrium and pair capability.
unit:mm
2103A
[FC151]
Electrical Connection
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
1:Emitter 1
2:Base 1
3:Emitter 2
4:Collector 2
5:Base 2
6:Collector1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
–20
V
Collector-to-Emitter Voltage
VCEO
VEBO
–15
V
–3
V
IC
PC
–50
mA
200
mW
300
mW
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
PT
Tj
Storage Temperature
Tstg
1 unit
150
˚C
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=–15V, IE=0
–0.1
µA
Emitter Cutoff Current
IEBO
VEB=–2V, IE=0
–0.1
µA
DC Current Gain
DC Current Gain Ratio
B-E Voltage Difference
Gain-Bandwidth Product
Output Capacitance
Forward Transfer Gain
Noise Figure
hFE
VCE=–10V, IC=–5mA
hFE(small/ VCE=–10V, IC=–5mA
large)
VBE(large- VCE=–10V, IC=–5mA
small)
fT
Cob
20
0.7
100
0.93
3.0
VCE=–10V, IC=–5mA
1.5
VCB=–10V, f=1MHz
3.0
1.0
| S21e |
VCE=–10V, IC=–5mA, f=0.9GHz
NF
VCE=–10V, IC=–3mA, f=0.9GHz
15
mV
GHz
1.5
5
pF
dB
2.0
dB
Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large)
and hFE(large-small) are for pair capability
Marking:151
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5
FC151
No.4652-2/5
FC151
No.4652-3/5
FC151
No.4652-4/5
FC151
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.4652-5/5