FDD8778/FDU8778 N-Channel PowerTrench® MOSFET 25V, 35A, 14mΩ Features tm General Description Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V Low gate resistance A Application REE I DF M ENTATIO LE N MP LE RoHS compliant DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D I-PAK G D S (TO-251AA) G S Short Lead I-PAK S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 40 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 145 24 mJ 39 W -55 to 175 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.8 RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8778 Device FDD8778 Package TO-252AA Reel Size 13’’ Tape Width 12mm Quantity 2500 units FDU8778 FDU8778 TO-251AA N/A(Tube) N/A 75 units FDU8778 FDU8778_F071 TO-251AA N/A(Tube) N/A 75 units ©2006 Fairchild Semiconductor Corporation FDD8778/FDU8778 Rev. A 1 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET May 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 17.2 1 TJ = 150°C 250 µA ±10 µA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C rDS(on) Drain to Source On Resistance 1.2 1.5 -5.3 mV/°C VGS = 10V, ID = 35A 11.6 14.0 VGS = 4.5V, ID = 33A 15.7 21.0 VGS = 10V, ID = 35A TJ = 175°C 18.2 23.8 635 845 pF 160 215 pF 108 162 pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz Ω f = 1MHz 1.3 VDD = 13V, ID = 35A VGS = 10V, RGS = 27Ω 6 12 ns 22 35 ns 43 69 ns 32 51 ns 12.6 18 nC 6.7 9.4 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V Qg(5) Total Gate Charge at 5V VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 13V ID = 35A Ig = 1.0mA 2.1 nC 3.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 1.03 1.25 VGS = 0V, IS = 15A 0.89 1.2 IF = 35A, di/dt = 100A/µs 25 38 ns IF = 35A, di/dt = 100A/µs 17 26 nC V Notes: 1: Pulse time < 300µs, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.1mH, IAS = 22A ,VDD = 23V, VGS = 10V. FDD8778/FDU8778 Rev. A 2 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 70 4.0 ID, DRAIN CURRENT (A) 60 50 VGS = 10V 40 VGS = 5.0V VGS = 4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4.0V 30 VGS = 3.5V 20 10 VGS = 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3.0V 3.0 VGS = 3.5V 2.5 1.5 1.0 0.5 3.5 VGS = 10V 0 10 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 50 ID = 35A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 3. Normalized On Resistance vs Junction Temperature ID = 35A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 30 TJ = 175oC 20 10 TJ = 25oC 0 3.0 10 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 70 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 60 VGS = 5V 20 30 40 50 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics VGS = 4.5V VGS = 4V 2.0 VDD = 5V 50 40 30 TJ = 175oC 20 TJ = 25oC 10 TJ = - 55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) 5.0 Figure 5. Transfer Characteristics FDD8778/FDU8778 Rev. A VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 8 1000 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 13V VDD = 10V 4 VDD = 16V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 Coss Crss 100 40 0.1 15 Figure 7. Gate Charge Characteristics 50 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 10 TJ = 125oC TJ = 150oC VGS=10V 30 20 VGS=4.5V 10 o 1 1E-3 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 0 25 100 P(PK), PEAK TRANSIENT POWER (W) 10 1ms 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10 VDS, DRAIN-SOURCE VOLTAGE (V) DC 50 Figure 11. Forward Bias Safe Operating Area FDD8778/FDU8778 Rev. A 100 125 150 175 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us LIMITED BY PACKAGE 75 TC, CASE TEMPERATURE ( C) 10us 100 50 o 400 ID, DRAIN CURRENT (A) 40 RθJC = 3.8 C/W Figure 9. Unclamped Inductive Switching Capability 0.1 1 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 1 f = 1MHz VGS = 0V Ciss 5000 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: I = I25 175 – T C ----------------------150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 0.01 -5 10 t1 t2 SINGLE PULSE -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8778/FDU8778 Rev. A 5 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 FDD8778/FDU8778 Rev. A 6 www.fairchildsemi.com FDD8778/FDU8778 N-Channel PowerTrench® MOSFET TRADEMARKS