FDMC8588DC N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ Features General Description Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. State-of-the-art switching performance Lower output capacitance, gate resistance, and gate charge boost efficiency Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction Applications RoHS Compliant High side switching for high end computing High power density DC-DC synchronous buck converter Pin 1 S S S G Pin 1 D D Top Power 33 D D S D S D S D G D Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter (Note 5) Ratings 25 Units V VGS Gate to Source Voltage (Note 4) ±12 V Drain Current - Continuous (Package limited) TC = 25 °C - Continuous (Silicon Limited) ID 40 TC = 25 °C - Continuous 73 (Note 1a) - Pulsed PD TJ, TSTG A 60 Single Pulse Avalanche Energy EAS 17 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 29 41 (Note 1a) Operating and Storage Junction Temperature Range 3.0 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 7.0 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 3.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 °C/W Package Marking and Ordering Information Device Marking 08DC Device FDMC8588DC ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET June 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA , VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 ID = 250 μA , referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 12 V, VDS = 0 V V 5 mV/°C 1 μA 100 nA 1.8 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA , referenced to 25 °C VGS = 10 V, ID = 18 A 3.6 5.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 17 A 4.1 5.7 VGS = 10 V, ID = 18 A,TJ = 125 °C 5.5 7.6 VDD = 5 V, ID = 17 A 103 gFS Forward Transconductance 0.8 1.2 -4 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 1695 pF 493 pF 63 pF 0.4 Ω 8 ns 3 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 4.5V Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 17A, VGS = 10 V, RGEN = 6 Ω VDD = 13 V, ID = 17 A 25 ns 2 ns 12 nC 3.0 nC 3.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C VGS = 0 V, IS = 2 A (Note 2) 0.7 1.2 V VGS = 0 V, IS = 17 A (Note 2) 0.8 1.2 V IF = 17 A, di/dt = 100 A/μs 2 25 ns 10 nC www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 7.0 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 3.0 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 42 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 105 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 29 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 40 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 30 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 79 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 17 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 12 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 16 °C/W Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 105 °C/W when mounted on a minimum pad of 2 oz copper a. 42 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 1.2 mH, IAS = 7 A, VDD = 23 V, VGS = 10V. 100% tested at L = 0.1 mH, IAS = 16 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 5. The continuous Vds rating is 25V; however, a pulse of 28 V peak voltage for no longer than 3ns duration at 500KHz frequency can be applied. ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C 3 www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET Thermal Characteristics 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 10 V ID, DRAIN CURRENT (A) 50 VGS = 4.5 V VGS = 4 V 40 VGS = 3 V 30 VGS = 2.5 V 20 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 10 0 0.0 0.2 0.4 0.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.5 VGS = 2.5 V 2.0 VGS = 4 V 1.5 1.0 VGS = 4.5 V 0.5 0 10 Figure 1. On Region Characteristics rDS(on), DRAIN TO 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.0 -50 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 15 ID = 17 A 10 TJ = 125 oC 5 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On Resistance vs Junction Temperature 60 IS, REVERSE DRAIN CURRENT (A) 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 ID, DRAIN CURRENT (A) 50 20 1.2 0.6 -75 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 17 A VGS = 10 V 1.4 30 VGS = 10 V ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 20 VGS = 3 V VDS = 5 V 40 TJ = 150 oC 30 TJ = 25 oC 20 TJ = -55 oC 10 0 0.5 1.0 1.5 2.0 2.5 TJ = 150 oC 10 TJ = 25 oC 1 TJ = -55 oC 0.1 0.0 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 ID = 17 A Ciss VDD = 10 V 3.6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 VDD = 13 V 2.7 VDD = 15 V 1.8 1000 Coss Crss 100 0.9 f = 1 MHz VGS = 0 V 0.0 0 3 6 9 12 30 0.1 15 1 Figure 7. Gate Charge Characteristics 80 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 50 TJ = 25 oC TJ = 100 oC TJ = 125 oC 1 0.001 0.01 0.1 1 10 VGS = 10 V 60 40 Limited by Package o RθJC = 3.0 C/W 20 0 25 100 50 tAV, TIME IN AVALANCHE (ms) 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) 1000 100 μs 10 0.1 75 o 100 1 VGS = 4.5 V TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 105 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100200 10 SINGLE PULSE RθJA = 105 oC/W 1 TA = 25 oC 0.5 -4 10 10 -3 -2 10 -1 10 0 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C 100 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 105 C/W 1E-3 5E-4 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C 6 www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 8 3.40 3.20 PKG CL 3.40 2.37 MIN A B (0.45) 5 PKG C L SYM C L KEEP OUT AREA 5 2.15 MIN PKG 1.70 CL 3.40 3.20 1 8 (0.40) (0.65) 4 SEE DETAIL 'A' 0.70 MIN 1 4 0.65 0.42 MIN 1.95 LAND PATTERN RECOMMENDATION 0.10 C A B 0.37 0.27 1 1.95 0.65 4 0.50 0.30 (0.20) PKG C L (0.98) 2.10 1.90 NOTES: UNLESS OTHERWISE SPECIFIED (0.62) 8 (0.39) 5 A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08CREV3. (2.27) 0.52 0.10 C 1.05 0.95 0.08 C 0.23 0.18 0.05 0.00 DETAIL A S CA LE : 2X ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C C SEATING PLANE 7 www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMC8588DC Rev.C 8 www.fairchildsemi.com FDMC8588DC N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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