FAIRCHILD FDP7N50

UniFET
FDP7N50/FDPF7N50
TM
500V N-Channel MOSFET
Features
Description
• 7A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
G
G DS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FDP7N50
FDPF7N50
500
V
7
4.2
(Note 1)
Unit
28
7*
4.2 *
A
A
28 *
A
±30
V
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
Avalanche Current
(Note 1)
7
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25°C)
- Derate above 25°C
89
0.71
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
39
0.31
W
W/°C
-55 to +150
°C
300
°C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FDP7N50
FDPF7N50
Unit
Thermal Resistance, Junction-to-Case
1.4
3.2
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
RθJC
©2007 Fairchild Semiconductor Corporation
FDP7N50/FDPF7N50 REV. A
1
www.fairchildsemi.com
FDP7N50/FDPF7N50 500V N-Channel MOSFET
March 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP7N50
FDP7N50
TO-220
--
--
50
FDPF7N50
FDPF7N50
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
1
10
μA
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.76
0.9
Ω
--
2.5
--
S
--
720
940
pF
--
95
190
pF
--
9
13.5
pF
--
6
20
ns
--
55
120
ns
--
25
60
ns
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3.5A
gFS
Forward Transconductance
VDS = 40V, ID = 3.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 7A
RG = 25Ω
(Note 4, 5)
VDS = 400V, ID = 7A
VGS = 10V
(Note 4, 5)
--
35
80
ns
--
12.8
16.6
nC
--
3.7
--
nC
--
5.8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
28
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 7A
--
--
1.4
V
trr
Reverse Recovery Time
--
275
--
ns
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 7A
dIF/dt =100A/μs
--
0.04
--
μC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 7A, VDD = 50V, L=10mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP7N50/FDPF7N50 REV. A
2
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
20
Figure 2. Transfer Characteristics
VGS
Top :
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
1
10
ID , Drain Current [A]
ID, Drain Current [A]
15
10
* Notes :
1. 250μs Pulse Test
5
o
150 C
0
10
o
25 C
o
-55 C
-1
10
o
* Note:
1. VDS = 40V
2. TC = 25 C
2. 250μs Pulse Test
0
0
10
20
30
40
-2
50
10
2
VDS, Drain-Source Voltage [V]
6
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
IDR , Reverse Drain Current [A]
2.5
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
1
10
0
10
o
150 C
o
25 C
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
o
* Note : TJ = 25 C
0.0
-1
0
5
10
15
10
20
0.2
0.4
0.6
0.8
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
Coss
Crss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
10
10
VDS = 400V
8
6
4
2
* Note : ID = 7 A
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDP7N50/FDPF7N50 REV. A
1.8
VDS = 250V
10
0
1
10
1.6
VDS = 100V
Crss = Cgd
0
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)
100
1.2
Figure 6. Gate Charge Characteristics
Coss = Cds + Cgd
1000
1.0
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
8
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
RDS(ON) [Ω],Drain-Source On-Resistance
4
3
www.fairchildsemi.com
FDP7N50/FDPF7N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
1.1
1.0
*Notes :
1. VGS = 0 V
0.9
2. ID = 250 μA
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
2.5
2.0
1.5
1.0
∗Notes :
1. VGS = 10 V
0.5
2. ID = 3.5 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
o
TJ, Junction Temperature [ C]
-50
0
50
100
150
Figure 9-1. Maximum Safe Operating Area
- FDP7N50
Figure 9-2. Maximum Safe Operating Area
- FDPF7N50
10 us
1 ms
10 ms
100 ms
0
Operation in This Area
is Limited by R DS(on)
DC
-1
10
100 us
1
10
ID, Drain Current [A]
ID, Drain Current [A]
10 us
100 us
1
10
10
* Notes :
o
1. TC = 25 C
1 ms
10 ms
100 ms
0
10
Operation in This Area
is Limited by R DS(on)
DC
-1
10
* Notes :
o
1. TC = 25 C
o
o
2. TJ = 150 C
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2
10
200
o
TJ, Junction Temperature [ C]
-2
0
1
10
10
2
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current Vs. Case Temperature
8
ID, Drain Current [A]
6
4
2
0
25
50
75
100
125
150
o
TC, Case Temperature [ C]
FDP7N50/FDPF7N50 REV. A
4
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP7N50/FDPF7N50 500V N-Channel MOSFET
Figure 11-1. Transient Thermal Response Curve - FDP7N50
10
0
ZθJC(t), Thermal Response
D = 0 .5
0 .2
0 .1
10
-1
PDM
0 .0 5
t1
0 .0 2
0 .0 1
* N o te s :
t2
o
1 . Z θ JC (t) = 1 .4 C /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
s in g le p u ls e
10
3 . T J M - T C = P D M * Z θ JC (t)
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve - FDPF7N50
ZθJC(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
0 .0 5
10
PDM
-1
t1
0 .0 2
0 .0 1
* N o te s :
t2
o
1 . Z θ JC (t) = 3 .2 C /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
10
10
3 . T J M - T C = P D M * Z θ J C (t)
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FDP7N50/FDPF7N50 REV. A
5
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N50/FDPF7N50 REV. A
6
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP7N50/FDPF7N50 REV. A
7
www.fairchildsemi.com
FDP7N50/FDPF7N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP7N50/FDPF7N50 REV. A
8
www.fairchildsemi.com
(Continued)
TO-220F
3.30 ±0.10
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FDP7N50/FDPF7N50 REV. A
9
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Mechanical Dimensions
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only.
Rev. I24
10
FDP7N50/FDPF7N50 REV. A
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
tm